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US4587547A
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Electrode structure for a semiconductor devices
Assignee: NTT Inc
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Filing: 1983-07-12
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Granted: 1986-05-06
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Expires: 2003-07-12
Abstract
Abstract An electrode structure for use in semiconductor devices comprising: a semiconductive layer; a conductive layer disposed on one surface of the semiconductive layer; first regions which intervene between the layers and serve as passages for transmitting minority carriers from the semiconductive layer to said conductive layer; and second regions which intervene between said layers and serve as passages for conveying majority carriers between the semiconductive layer and conductive layer, the first and second regions being selectively formed on the semiconductive layer so as to be adjacent to one another.
Inventors
- 👤 Yoshihito Amemiya
- 👤 Takayuki Sugeta
- 👤 Yoshihiko Mizushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:45
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10D64/64; H10D8/00; H10D8/50; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/122; Y10S148/14
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
112 words
An electrode structure for use in semiconductor devices comprising: a semiconductive layer; a polycrystalline silicon conductive layer disposed on one surface of said semiconductive layer, said polycrystalline silicon conductive layer having a high impurity concentration; first regions which intervene between said layers and define main passages for transmitting minority carriers from said semiconductive layer to said conductive layer; and second regions which intervene between said layers and define main passages for conveying majority carriers between said semiconductive layer and said conductive layer, said first and second regions being selectively formed on said semiconductive layer so as to be adjacent to one another and to lie parallel with respect to the current paths.
Claim 2
Dependent Claim
112 words
An electrode structure for use in semiconductor devices comprising: a semiconductive layer; a polycrystalline silicon conductive layer disposed on one surface of said semiconductive layer, said polycrystalline silicon conductive layer having a high impurity concentration; first regions which intervene between said layers and define main passages for transmitting minority carriers from said semiconductive layer to said conductive layer; and second regions which intervene between said layers and define main passages for conveying majority carriers between said semiconductive layer and said conductive layer, said first and second regions being selectively formed on said semiconductive layer so as to be adjacent to one another and to lie parallel with respect to the current paths.
Claim 3
Dependent Claim
133 words
An electrode structure for use in semiconductor devices comprising: a semiconductor layer; a polycrystalline silicon conductive layer disposed on one surface of said semiconductive layer; first regions which intervene between said layers and define main passages for transmitting minority carriers from said semiconductive layer to said conductive layer; and second regions which intervene between said layers and define main passages for conveying majority carriers between said semiconductive layer and said conductive layer, said first and second regions being selectively formed on said semiconductive layer so as to be adjacent to one another and to lie parallel with respect to the current paths; said first regions, said second regions and said conductive layer being of the same conduction type, the impurity concentration of said first regions being lower than that of said second regions.
Claim 4
Dependent Claim
133 words
An electrode structure for use in semiconductor devices comprising: a semiconductor layer; a polycrystalline silicon conductive layer disposed on one surface of said semiconductive layer; first regions which intervene between said layers and define main passages for transmitting minority carriers from said semiconductive layer to said conductive layer; and second regions which intervene between said layers and define main passages for conveying majority carriers between said semiconductive layer and said conductive layer, said first and second regions being selectively formed on said semiconductive layer so as to be adjacent to one another and to lie parallel with respect to the current paths; said first regions, said second regions and said conductive layer being of the same conduction type, the impurity concentration of said first regions being lower than that of said second regions.
Claim 5
Dependent Claim
18 words
A structure according to claims 1 or 2, wherein said conductive layer has a metal layer overlying thereon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-05 | 1989-11-04 | 1990-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-05 | 1993-11-04 | 1994-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-05 | 1997-11-04 | 1998-05-06 | $7700.00 | Window Closed / Lapsed |