Patent US4612701A successfully refreshed from Google Patents.
US4612701A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method to reduce the height of the bird's head in oxide isolated processes
Assignee: Harris Corp
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Filing: 1984-03-12
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Granted: 1986-09-23
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Expires: 2004-03-12
Abstract
Abstract The bird's heads of a local oxidation process are minimized by performing a polishing or grinding step to reduce the height of the bird's head down to a plane using the oxide inhibiting mask of the local oxidation process as a polishing stop.
Inventors
- 👤 Eugene R. Cox
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:39
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
56 words
A method of forming oxides comprising: forming an oxide inhibiting mask on a semiconductor substrate; forming an opening in said mask exposing portions of said substrate; oxidizing said exposed portions of said substrate; and grinding portions of said oxidized substrate which extends above said mask down to a plane using said mask as a polishing stop.
Claim 2
Independent Claim
56 words
A method of forming oxides comprising: forming an oxide inhibiting mask on a semiconductor substrate; forming an opening in said mask exposing portions of said substrate; oxidizing said exposed portions of said substrate; and grinding portions of said oxidized substrate which extends above said mask down to a plane using said mask as a polishing stop.
Claim 3
Dependent Claim
22 words
The method according to claim 1 wherein said substrate is silicon, and said oxide inhibiting mask includes a layer of silicon nitride.
Claim 4
Independent Claim
74 words
The method of forming an oxide in a semiconductor substrate comprising: forming an oxide on a semiconductor substrate; forming an oxide inhibiting mask on said oxide; forming an opening in said oxide and said oxide inhibiting mask to expose a portion of said substrate; oxidizing said exposed portions of said substrate; and grinding portions of said oxidized substrate which extends above said mask down to a plane using said mask as a polishing stop.
Claim 5
Independent Claim
74 words
The method of forming an oxide in a semiconductor substrate comprising: forming an oxide on a semiconductor substrate; forming an oxide inhibiting mask on said oxide; forming an opening in said oxide and said oxide inhibiting mask to expose a portion of said substrate; oxidizing said exposed portions of said substrate; and grinding portions of said oxidized substrate which extends above said mask down to a plane using said mask as a polishing stop.
Claim 6
Dependent Claim
26 words
The methos according to claim 3 wherein said substrate is silicon, said oxide is a silicon oxide and said oxide inhibiting mask is a silicon nitride.
Claim 7
Independent Claim
72 words
A method of forming an oxide in a semiconductor substrate comprising: forming an oxide inhibiting mask on a semiconductor substrate; forming an opening in said mask exposing portions of said substrate; removing a portion of said exposed substrate to form a recess; oxidizing said exposed portions of said substrate; and grinding portions of said oxidized substrate which extends above said mask down to a plane using said mask as a polishing stop.
Claim 8
Independent Claim
72 words
A method of forming an oxide in a semiconductor substrate comprising: forming an oxide inhibiting mask on a semiconductor substrate; forming an opening in said mask exposing portions of said substrate; removing a portion of said exposed substrate to form a recess; oxidizing said exposed portions of said substrate; and grinding portions of said oxidized substrate which extends above said mask down to a plane using said mask as a polishing stop.
Claim 9
Dependent Claim
28 words
The method according to claim 5 wherein forming said mask includes forming an oxide on said substrate and forming a layer of oxide inhibiting material on said oxide.
Claim 10
Dependent Claim
24 words
The method according to claim 6 wherein said substrate is silicon, said oxide is silicon dioxide and said oxide inhibiting mask is silicon nitride.
Claim 11
Dependent Claim
13 words
The method according to claim 5 wherein said removing includes etching said substrate.
Claim 12
Dependent Claim
47 words
A semiconductor structure comprising: a substrate of semiconductor material; a plurality of oxide inserts extending into said substrate and having a central portion and a head portion extending above said central portion about the periphery of said central portion, said head portion having a planar top surface.
Claim 13
Dependent Claim
47 words
A semiconductor structure comprising: a substrate of semiconductor material; a plurality of oxide inserts extending into said substrate and having a central portion and a head portion extending above said central portion about the periphery of said central portion, said head portion having a planar top surface.
Claim 14
Dependent Claim
38 words
A semiconductor substrate according to claim 9, including an oxide inhibiting layer on the surface of said substrate and said planar surface of said head portion is substantially coplanar with the top surface of said oxide inhibiting layer.
Claim 15
Dependent Claim
19 words
A semiconductor substrate according to claim 10, including an oxide layer between said oxide inhibiting layer and said substrate.
Claim 16
Dependent Claim
24 words
A semiconductor substrate according to claim 11, wherein the top of said central portion is substantially coplanar with the top of said oxide layer.
Claim 17
Dependent Claim
15 words
A semiconductor substrate according to claim 10, wherein said oxide inhibiting layer is a nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-22 | 1990-03-24 | 1990-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-22 | 1994-03-24 | 1994-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-22 | 1998-03-24 | 1998-09-23 | $7700.00 | Window Closed / Lapsed |