Patent US4675980A successfully refreshed from Google Patents.
US4675980A
Expired / Lapsed
US
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Method for making vertically layered MOMOM tunnel device
Assignee: Eaton Corp
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Filing: 1986-05-15
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Granted: 1987-06-30
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Expires: 2006-05-15
Abstract
Abstract MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44) extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path.
Inventors
- 👤 Robert W. Lade
- 👤 James A. Benjamin
- 👤 Herman P. Schutten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:42
CPC Classifications
H; H10; H10N; H10N70/00; Y; Y10; Y10S; Y10S438/00; Y10S438/957
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
106 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, then a first insulating layer on said first metal layer, then a second metal layer on said first insulating layer, wherein said layers have vertically overlapped portions; defining a generally vertical edge through said overlapped layer portions; subjecting said substrate and layers to an oxidizing atmosphere such that first and second oxidation layers are formed on the edges of respective said first and second metal layers exposed by said generally vertical side; forming a third metal layer vertically between said first and second oxidation layers.
Claim 2
Independent Claim
106 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, then a first insulating layer on said first metal layer, then a second metal layer on said first insulating layer, wherein said layers have vertically overlapped portions; defining a generally vertical edge through said overlapped layer portions; subjecting said substrate and layers to an oxidizing atmosphere such that first and second oxidation layers are formed on the edges of respective said first and second metal layers exposed by said generally vertical side; forming a third metal layer vertically between said first and second oxidation layers.
Claim 3
Dependent Claim
62 words
The invention according to claim 1 comprising: forming a second insulating layer on said second metal layer prior to said step of defining a generally vertical side; and forming said third metal layer horizontally along the top of said second insulating layer and generally vertically along said generally vertical side of said layers over and between said first and second oxidation layers.
Claim 4
Dependent Claim
127 words
The invention according to claim 2 comprising: providing said first insulating layer of a material having a faster etch rate than said second insulating layer; etching said layers to form an undercut in said first insulating layer extending generally horizontally inwardly from said generally vertical side; subjecting said layers and said substrate to an oxidizing atmosphere such that said first oxidation layer also extends horizontally along the top of said first metal layer along said undercut, and said second oxidation layer extends horizontally along the bottom of said second metal layer along said undercut and spaced above said horizontal first oxidation layer extension; and forming said third metal layer with a portion extending horizontally inwardly into said undercut between said horizontal first and second oxidation layer extensions.
Claim 5
Independent Claim
138 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, and then an insulating layer on said first metal layer, and then a second metal layer on said insulating layer such that said layers have vertically overlapped portions; defining a generally vertical side through said layers; forming an undercut in said insulating layer extending horizontally inwardly from said generally vertical edge; forming a first oxidation layer in said undercut extending horizontally along the top of said first metal layer; forming a second oxidation layer in said undercut extending horizontally along the bottom of said second metal layer and spaced above said first oxidation layer; and forming a third metal layer having a portion extending horizontally inwardly into said undercut between said first and second horizontal oxidation layers.
Claim 6
Independent Claim
138 words
A method for fabricating an MOMOM tunnel device comprising: providing an insulating substrate; forming a first metal layer on said substrate, and then an insulating layer on said first metal layer, and then a second metal layer on said insulating layer such that said layers have vertically overlapped portions; defining a generally vertical side through said layers; forming an undercut in said insulating layer extending horizontally inwardly from said generally vertical edge; forming a first oxidation layer in said undercut extending horizontally along the top of said first metal layer; forming a second oxidation layer in said undercut extending horizontally along the bottom of said second metal layer and spaced above said first oxidation layer; and forming a third metal layer having a portion extending horizontally inwardly into said undercut between said first and second horizontal oxidation layers.
Claim 7
Dependent Claim
70 words
The invention according to claim 4 comprising forming said oxidation layers by growing oxide in a field directed plasma, said field being directed generally vertically such that thick oxide grows along the generally vertical edges of said first and second metal layers exposed by said generally vertical side, and thinner oxide grows along said horizontal top and bottom surfaces of said respective first and second metal layers in said undercut.
Claim 8
Dependent Claim
77 words
The invention according to claim 5 comprising: forming a second insulating layer on said second metal layer and of a material having a slower etch rate than said first insulating layer; forming said undercut by etching said layers; forming said third metal layer horizontally along the top of said second insulating layer and vertically along said generally vertical side of said layers over and between said first and second oxidation layers including said thick and thinner portions.
Claim 9
Dependent Claim
59 words
The invention according to claim 6 comprising providing said first and second metal layers of different material to provide different oxidation growth rates of said first and second oxidation layers such that one of said first and second oxidation layers in said undercut is vertically thicker than the other of said first and second oxidation layers in said undercut.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-29 | 1990-12-29 | 1991-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-29 | 1994-12-29 | 1995-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-29 | 1998-12-29 | 1999-06-30 | $7700.00 | Window Closed / Lapsed |