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US4695331A
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Hetero-augmentation of semiconductor materials
Assignee: Chronar Corp
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Filing: 1985-05-06
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Granted: 1987-09-22
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Expires: 2005-05-06
Abstract
Abstract Hetero-augmentation of semiconductor materials by reacting a mixture of (1) a gaseous precursor of a host semiconductor with (2) a gaseous compound of the host and a hetero atom. The host precursor is a semiconductor hydride or a mixture of hydrides, including those of silicon and germanium. The compound of the host and hetero-atom includes a silyl or germyl dopant or alloyant. Suitable dopants are phosphorous, arsenic, and nitrogen. Suitable alloyants are other semiconductors and nitrogen. The reaction can take place pyrolytically, by electrical discharge, or photochemically.
Inventors
- 👤 K. R. Ramaprasad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/24; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
60 words
The method of forming a doped semiconductor which comprises the steps of: (a) feeding a gaseous host semiconductor precursor to a reaction chamber; (b) introducing a gaseous compound of the host and a hetero-atom into the reaction chamber, said hetero-atom being a dopant for said semiconductor; and (c) reacting the mixture of the precursor and the compound in said chamber.
Claim 2
Independent Claim
60 words
The method of forming a doped semiconductor which comprises the steps of: (a) feeding a gaseous host semiconductor precursor to a reaction chamber; (b) introducing a gaseous compound of the host and a hetero-atom into the reaction chamber, said hetero-atom being a dopant for said semiconductor; and (c) reacting the mixture of the precursor and the compound in said chamber.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the reaction takes place pyrolytically.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein the reaction takes place by electrical discharge.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein the reaction takes place by photo-chemical decomposition.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein the compound is a silyl phosphine and the precursor is a silicon hydride.
Claim 7
Dependent Claim
24 words
The method of claim 5 wherein the phosphine is selected from the class of monosilyl phosphines and polysilyl phosphines including di- and trisilyl phosphines.
Claim 8
Dependent Claim
18 words
The method of claim 1 wherein the compound is a germyl phosphine and the precursor is a germane.
Claim 9
Dependent Claim
12 words
The method of claim 1 wherein the compound is a silyl amine.
Claim 10
Dependent Claim
19 words
The method of claim 8 wherein the silyl amine has the formula (SiH 3 ) 1+x NH 2-x .
Claim 11
Dependent Claim
12 words
The method of claim 1 wherein the compound is a silyl amine.
Claim 12
Dependent Claim
19 words
The method of claim 1 including producing a semiconductor alloy wherein the precursor is a mixture of semiconductor hydrides.
Claim 13
Dependent Claim
14 words
The method of claim 11 wherein the mixture is of silicon and germanium hydrides.
Claim 14
Dependent Claim
36 words
The method of claim 1 wherein said compound has the formula (AH 3 ) 1+x BH 2-x , where x is 0, 1 or 2; A is silicon or germanium; B is phosphorus, arsenic, or nitrogen.
Claim 15
Independent Claim
82 words
The method of producing a semiconductor alloy which comprises the steps of: (a) feeding a gaseous compound of the type (AH 3 ) 1+x B'H 3-x where x is 0, 1 or 2, A is silicon; and B' is an alloying element selected from germanium and tin; to a reaction chamber; (b) introducing a gaseous semiconductor precursor into said reaction chamber; and (c) reacting the mixture of said precursor and said compound in said reaction chamber; thereby to achieve a semiconductor alloy.
Claim 16
Independent Claim
82 words
The method of producing a semiconductor alloy which comprises the steps of: (a) feeding a gaseous compound of the type (AH 3 ) 1+x B'H 3-x where x is 0, 1 or 2, A is silicon; and B' is an alloying element selected from germanium and tin; to a reaction chamber; (b) introducing a gaseous semiconductor precursor into said reaction chamber; and (c) reacting the mixture of said precursor and said compound in said reaction chamber; thereby to achieve a semiconductor alloy.
References Cited (Backward Citations)
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