Patent US4758528A successfully refreshed from Google Patents.
US4758528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned metal process for integrated circuit metallization
Assignee: International Business Machines Corp
•
Filing: 1986-04-24
•
Granted: 1988-07-19
•
Expires: 2006-04-24
Abstract
Abstract A method of forming on a substrate a pattern of structures having a thickness on the order of one micron or less. A first insulating layer is formed on a major surface of a substrate, for example, a silicon body. A polycrystalline silicon layer is formed thereover and openings are formed therein by reactive ion etching to provide substantially horizontal surfaces and substantially vertical sidewalls. The vertical sidewalls of the openings are formed at the desired locations of the narrow dimensioned structures. A second, conformal insulating layer is then formed followed by a reactive ion etching step which substantially removes the horizontal portions of the second insulating layer. The remaining polycrystalline silicon layer is removed to leave a pattern of self-supporting narrow dimensioned dielectric regions on the major surface of the substrate. The narrow dimensioned dielectric regions can be used as a mask to form narrow structures in the substrate. Alternatively, a self-aligned pattern of metallization can be formed using the narrow dimensioned dielectric regions to provide sub-micron metal-to-metal spacing.
Inventors
- 👤 George R. Goth
- 👤 Ingrid E. Magdo
- 👤 Shashi D. Malaviya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/20; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H10W20/062
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
150 words
A method for processing a semiconductor body comprising: (a) providing a semiconductor body; (b) forming at least one layer upon said body; (c) removing at least one portion of said at least one layer to form at least one opening therein extending to the surface of said body, (d) said opening having substantially vertical surfaces having vertical edges; (e) forming a sidewall structure on said semiconductor body to provide a mask on said semiconductor body, said sidewall structure being juxtaposed with said vertical edges of said at least one layer sidewall; (f) removing the remainder of said at least one layer thereby exposing the remainder of said semiconductor body with the exception of a pattern defined by said sidewall structure of the surface of said semiconductor body; and (g) processing said semiconductor body by means of a treatment processs using said sidewall structure as a mask for said semiconductor body.
Claim 2
Independent Claim
150 words
A method for processing a semiconductor body comprising: (a) providing a semiconductor body; (b) forming at least one layer upon said body; (c) removing at least one portion of said at least one layer to form at least one opening therein extending to the surface of said body, (d) said opening having substantially vertical surfaces having vertical edges; (e) forming a sidewall structure on said semiconductor body to provide a mask on said semiconductor body, said sidewall structure being juxtaposed with said vertical edges of said at least one layer sidewall; (f) removing the remainder of said at least one layer thereby exposing the remainder of said semiconductor body with the exception of a pattern defined by said sidewall structure of the surface of said semiconductor body; and (g) processing said semiconductor body by means of a treatment processs using said sidewall structure as a mask for said semiconductor body.
Claim 3
Dependent Claim
29 words
The method of claim 1, wherein said body comprises a semiconductor substrate and an insulating layer thereon, and said at least one layer is formed upon said insulating layer.
Claim 4
Dependent Claim
14 words
The method of claim 2, wherein said at least one layer is polycrystalline silicon.
Claim 5
Dependent Claim
25 words
The method of claim 2, wherein said at least one layer is a first layer of polycrystalline silicon and a second layer of an insulator.
Claim 6
Dependent Claim
19 words
The method of claim 1, wherein the width of said narrow dimensioned structures is less than about 1.5 micrometers.
Claim 7
Dependent Claim
12 words
The method of claim 1, wherein said sidewall structure comprises silicon dioxide.
Claim 8
Dependent Claim
12 words
The method of claim 1, wherein said sidewall structure comprises polycrystalline silicon.
Claim 9
Dependent Claim
15 words
The method of claim 1, wherein said sidewall structure is used as an etch mask.
Claim 10
Dependent Claim
11 words
The method of claim 1, wherein said treatment process comprises diffusion.
Claim 11
Dependent Claim
12 words
The method of claim 1, wherein said treatment process comprises ion implantation.
Claim 12
Independent Claim
107 words
A method of forming structures having narrow dimensions in a semiconductor substrate, comprising: (a) forming an insulating layer upon said substrate; (b) forming upon said insulating layer a patterned layer having substantially horizontal surfaces and substantially vertical surfaces; (c) forming a sidewall layer upon said insulating layer juxtaposed with the vertical surfaces of said patterned layer; (d) removing said patterned layer in such a manner that said sidewall layer remains upon the insulating layer; and (e) using patterns formed by said sidewall layer directly as a mask for etching said insulating layer, and (f) etching said insulating layer 52, thereby exposing a region of said semiconductor substrate.
Claim 13
Independent Claim
107 words
A method of forming structures having narrow dimensions in a semiconductor substrate, comprising: (a) forming an insulating layer upon said substrate; (b) forming upon said insulating layer a patterned layer having substantially horizontal surfaces and substantially vertical surfaces; (c) forming a sidewall layer upon said insulating layer juxtaposed with the vertical surfaces of said patterned layer; (d) removing said patterned layer in such a manner that said sidewall layer remains upon the insulating layer; and (e) using patterns formed by said sidewall layer directly as a mask for etching said insulating layer, and (f) etching said insulating layer 52, thereby exposing a region of said semiconductor substrate.
Claim 14
Dependent Claim
32 words
The method of claim 11, wherein said insulating layer comprises more than one distinct component and the first component of said insulating layer in contact with said semiconductor body comprises silicon dioxide.
Claim 15
Dependent Claim
18 words
The method of claim 11, wherein said openings in said insulating layer are etched down to said substrate.
Claim 16
Dependent Claim
18 words
The method of claim 11, wherein said narrow dimensioned structures are less than about 1.5 micrometers in width.
Claim 17
Dependent Claim
19 words
The method of claim 14, wherein said narrow dimensioned structures are between about 0.3 to 1.2 micrometers in width.
Claim 18
Dependent Claim
14 words
The method of claim 11, wherein said insulating layer comprises more than one layer.
Claim 19
Dependent Claim
19 words
The method of claim 11, wherein said patterned layer comprises polycrystalline silicon and said sidewall layer comprises silicon dioxide.
Claim 20
Dependent Claim
23 words
The method of claim 11, including using said openings etched in said insulating layer for treating said semiconductor substrate with a treatment process.
Claim 21
Dependent Claim
11 words
The method of claim 18 wherein said treatment process comprises diffusion.
Claim 22
Dependent Claim
12 words
The method of claim 18 wherein said treatment process comprises ion implantation.
Claim 23
Independent Claim
179 words
A method of forming structures having narrow dimensions within a semiconductor substrate 51, comprising: (a) forming an insulating layer 52 upon said substrate 51; (f) forming an intermediate mask layer layer 53 having openings therein, (c) forming a sidewall layer 56 of an insulating material composed of a material selected from the group consisting of silicon dioxide, silicon nitride, aluminum oxide, and polycrystalline silicon, said sidewall layer being formed upon said insulating layer 52 juxtaposed with the vertical surfaces of said intermediate mask layer 53, (d) removing said intermediate mask layer 53 leaving said sidewall layer 56 of insulating material remaining upon said insulating layer 52; and (e) using said sidewall layer 56 of insulating material directly as a mask for etching regions of said insulating layer 52 to expose at least one corresponding region of said semiconductor substrate, (f) treating said semiconductor substrate through said sidewall layer of insulating material using a process selected from ion implantation and diffusion for modifying the composition of an exposed portion of said semiconductor substrate below said sidewall layer of insulating material.
Claim 24
Independent Claim
179 words
A method of forming structures having narrow dimensions within a semiconductor substrate 51, comprising: (a) forming an insulating layer 52 upon said substrate 51; (f) forming an intermediate mask layer layer 53 having openings therein, (c) forming a sidewall layer 56 of an insulating material composed of a material selected from the group consisting of silicon dioxide, silicon nitride, aluminum oxide, and polycrystalline silicon, said sidewall layer being formed upon said insulating layer 52 juxtaposed with the vertical surfaces of said intermediate mask layer 53, (d) removing said intermediate mask layer 53 leaving said sidewall layer 56 of insulating material remaining upon said insulating layer 52; and (e) using said sidewall layer 56 of insulating material directly as a mask for etching regions of said insulating layer 52 to expose at least one corresponding region of said semiconductor substrate, (f) treating said semiconductor substrate through said sidewall layer of insulating material using a process selected from ion implantation and diffusion for modifying the composition of an exposed portion of said semiconductor substrate below said sidewall layer of insulating material.
Claim 25
Independent Claim
203 words
A method for fabricating narrow dimensioned structures in a body comprising: (a) providing a semiconductor body within which to form said structures; (f) forming at least one layer upon said body; (c) removing portions of said at least one layer to form openings therein extending to the surface of said body, (d) said openings having substantially vertical surfaces having vertical edges wherein the vertical edges of said openings are at locations where said narrow dimensioned structures are desired; (e) forming sidewall structures of an insulating material on said semiconductor body to provide a mask on said semiconductor body, said sidewall structures of an insulating material being juxtaposed with said vertical edges of said at least one layer, with said sidewall structures of said insulating material having substantially the same width as that of the desired said narrow dimensioned structures; (f) removing the remainder of said at least one layer thereby exposing a pattern in a region of said semiconductor body; and (g) processing the material in said region of said semiconductor body by means of a treatment process using said sidewall structures to define said pattern, said sidewall structure serving as a mask to form said narrow dimensioned structures within said semiconductor body.
Claim 26
Independent Claim
203 words
A method for fabricating narrow dimensioned structures in a body comprising: (a) providing a semiconductor body within which to form said structures; (f) forming at least one layer upon said body; (c) removing portions of said at least one layer to form openings therein extending to the surface of said body, (d) said openings having substantially vertical surfaces having vertical edges wherein the vertical edges of said openings are at locations where said narrow dimensioned structures are desired; (e) forming sidewall structures of an insulating material on said semiconductor body to provide a mask on said semiconductor body, said sidewall structures of an insulating material being juxtaposed with said vertical edges of said at least one layer, with said sidewall structures of said insulating material having substantially the same width as that of the desired said narrow dimensioned structures; (f) removing the remainder of said at least one layer thereby exposing a pattern in a region of said semiconductor body; and (g) processing the material in said region of said semiconductor body by means of a treatment process using said sidewall structures to define said pattern, said sidewall structure serving as a mask to form said narrow dimensioned structures within said semiconductor body.
Claim 27
Independent Claim
160 words
A method of forming structures having narrow dimensions in a semiconductor substrate 51, comprising: (a) forming an insulating layer 52 upon said substrate 51; (b) forming upon said insulating layer 52 a patterned layer 53 having substantially horizontal surfaces and substantially vertical surfaces; (c) forming a sidewall layer 56 of an insulating material upon said insulating layer 52 juxtaposed with the vertical surfaces of said patterned layer 53; (d) removing said patterned layer 53 in such a manner that said sidewall layer 56 remains upon said insulating layer 52; and (e) using patterns formed by said sidewall layer 56 directly as a mask for etching said insulating layer 52 exposing a region of said semiconductor substrate, (f) treating said region of said semiconductor substrate through said sidewall layer being employed as a mask, said treating being performed using a process for modifying the composition of said region of said semiconductor substrate below said sidewall layer being employed as a mask.
Claim 28
Independent Claim
160 words
A method of forming structures having narrow dimensions in a semiconductor substrate 51, comprising: (a) forming an insulating layer 52 upon said substrate 51; (b) forming upon said insulating layer 52 a patterned layer 53 having substantially horizontal surfaces and substantially vertical surfaces; (c) forming a sidewall layer 56 of an insulating material upon said insulating layer 52 juxtaposed with the vertical surfaces of said patterned layer 53; (d) removing said patterned layer 53 in such a manner that said sidewall layer 56 remains upon said insulating layer 52; and (e) using patterns formed by said sidewall layer 56 directly as a mask for etching said insulating layer 52 exposing a region of said semiconductor substrate, (f) treating said region of said semiconductor substrate through said sidewall layer being employed as a mask, said treating being performed using a process for modifying the composition of said region of said semiconductor substrate below said sidewall layer being employed as a mask.
References Cited (Backward Citations)
US4089992A
Cited
US3597667A
Cited
US3538399A
Cited
US3648125A
Cited
US3801880A
Cited
US3750268A
Cited
US3806778A
Cited
US3847687A
Cited
US3902926A
Cited
US4038110A
Cited
US3984822A
Cited
US4083098A
Cited
US4038107A
Cited
US4038107B1
Cited
US4148055A
Cited
US4075045A
Cited
GB1535086A
Cited
US4056642A
Cited
US4104086A
Cited
GB2003660A
Cited
US4160991A
Cited
US4173768A
Cited
US4178674A
Cited
US4157269A
Cited
US4209349A
Cited
US4209350A
Cited
US4234362A
Cited
US4256514A
Cited
US4236294A
Cited
US4319395A
Cited
US4231819A
Cited
US4254428A
Cited
US4318751A
Cited
US4319932A
Cited
US4359816A
Cited
US4378627A
Cited
US4400865A
Cited
US4488162A
Cited
US4322883A
Cited
US4358340A
Cited
US4354896A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |