Patent US4764247A successfully refreshed from Google Patents.
US4764247A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon containing resists
Assignee: CORPORATE MANAGEMENT Co
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Filing: 1987-03-18
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Granted: 1988-08-16
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Expires: 2007-03-18
Abstract
Abstract The fabrication of improved semiconductor devices having photoresist materials in the form of silicon containing polystyrene copolymers of a halomethylstyrene and an alkylsilylstyrene and the resulting improved semiconductor wafer device containing silicon prior to etching; the resulting resist having reduced resist erosion and improved plasma resiliency.
Inventors
- 👤 Carina T. Leveriza
- 👤 Russell A. Morgan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:19
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758; G03F7/038; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
20 words
A resist material capable of forming a negative image by application of radiation, said material comprising an silyl-containing styrene copolymer.
Claim 2
Dependent Claim
20 words
A resist material capable of forming a negative image by application of radiation, said material comprising an silyl-containing styrene copolymer.
Claim 3
Dependent Claim
24 words
The resist material as defined in claim 1, in which said polymer contains at least about 5 percent copolymerized chloromethylstyrene the remainder in polytrimethylsilylstyrene.
Claim 4
Dependent Claim
21 words
The resist material as defined in claim 1, in which the average molecular weight of said copolymer is at least 2000.
Claim 5
Dependent Claim
96 words
A lithographic process for preparing a pattern resist on a suitable substrate, which process comprises: (1) applying a layer of resist material onto a substrate, said polymer being selected from the group consisting of allylsilyl-containing styrene copolymers with halogenated methylstyrene, (2) irradiating said resist copolymer layer to form a negative pattern image therein; and (3) developing said image by: (i) dissolving away unexposed polymer with a suitable developer solvent, and (ii) rinsing said wet developed resist with suitable solvent to maintain well-defined developed resist pattern image; and (4) etching the resist material in a suitable plasma.
Claim 6
Dependent Claim
96 words
A lithographic process for preparing a pattern resist on a suitable substrate, which process comprises: (1) applying a layer of resist material onto a substrate, said polymer being selected from the group consisting of allylsilyl-containing styrene copolymers with halogenated methylstyrene, (2) irradiating said resist copolymer layer to form a negative pattern image therein; and (3) developing said image by: (i) dissolving away unexposed polymer with a suitable developer solvent, and (ii) rinsing said wet developed resist with suitable solvent to maintain well-defined developed resist pattern image; and (4) etching the resist material in a suitable plasma.
Claim 7
Dependent Claim
27 words
The process of claim 4 in which said resist polymer is a copolymer of alkylsilylsubstituted styrene and halomethylstyrene having an average molecular weight of more than 2000.
Claim 8
Dependent Claim
17 words
The process of claim 4 in which said resist polymer is a copolymer of trimethylsilylstyrene and chloromethylstyrene.
Claim 9
Dependent Claim
13 words
The process of claim 6 wherein the developer/rinse is methylisobutylketone and isopropyl alcohol.
Claim 10
Dependent Claim
13 words
Negative resist compositions consisting essentially of styrene copolymers having silyl containing styrene monomers.
Claim 11
Dependent Claim
13 words
Negative resist compositions consisting essentially of styrene copolymers having silyl containing styrene monomers.
Claim 12
Dependent Claim
24 words
The composition of claim 8 in which said copolymer is selected from a copolymer prepared from the monomers of alkylsilyl substituted styrene and halomethylstyrene.
Claim 13
Dependent Claim
16 words
The composition of claim 9 wherein said compolymers are prepared from the monomers trimethylsilylstyrene and chloromethylstyrene.
Claim 14
Dependent Claim
21 words
The composition of claim 9 in which the average molecular weight of said copolymer is between about 2000 and about 1000000.
Claim 15
Dependent Claim
15 words
The composition of claim 9 in which the chloromethylstyrene monomer contains about five percent chlorine.
Claim 16
Dependent Claim
23 words
In the process of claim 4 in which said suitable substrate consists of a glass plate with chromium or chromium oxide vaporcoated thereon.
Claim 17
Dependent Claim
21 words
A semiconductor wafer having deposited on its surface photoresist, molecules of which contain copolymers prepared from monomers of alkylsilyl-substituted-styrene and halomethylstyrene.
Claim 18
Dependent Claim
21 words
A semiconductor wafer having deposited on its surface photoresist, molecules of which contain copolymers prepared from monomers of alkylsilyl-substituted-styrene and halomethylstyrene.
Claim 19
Dependent Claim
23 words
A semiconductor wafer as claimed in claim 14 in which between the photoresist and the substrate there is a silicon containing polystyrene copolymer.
Claim 20
Dependent Claim
19 words
A semiconductor wafer as claimed in claim 15 in which said polystyrene copolymer essentially consists of trimethylsilylstyrene and chloromethylstyrene.
Claim 21
Dependent Claim
22 words
A semiconductor wafer as claimed in claim 14 wherein said photoresist comprises a silicon-containing polystyrene resin consisting of an alkylsilyl-substituted-styrene and halomethylstyrene.
Claim 22
Dependent Claim
12 words
A device made from a semiconductor wafer as claimed in claim 17.
References Cited (Backward Citations)
US4657843A
Cited
US4551418A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-16 | 1992-02-15 | 1992-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-16 | 1996-02-15 | 1996-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-16 | 2000-02-15 | 2000-08-16 | $7700.00 | Window Closed / Lapsed |