US4906592A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a multilayered metal network for bonding components of a high-density integrated circuit using a spin on glass layer
Assignee: Bull SAS
•
Filing: 1989-03-14
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Granted: 1990-03-06
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Expires: 2009-03-14
Abstract
Abstract In a high-density integrated circuit having a multilayered metal interconnection network, a planarization layer is formed over a lower metal layer which includes conductors having steep edges by chemically depositing a dielectric layer in the vapor phase over the lower metal layer so as to fill up hollows formed in the dielectric layer in intervals between the conductors, spreading a viscous layer of spin-on-glass over the dielectric layer, annealing the spin-on-glass layer to form a compact mass, forming vias through the spin-on-glass and dielectric layers to the conductors, and applying an upper metal layer over the spin-on-glass layer so as to fill the vias and provide electrical contacts to the conductors of the lower metal layer.
Inventors
- 👤 Pierre Merenda
- 👤 Philippe Chantraine
- 👤 Daniel Lambert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10W20/40; H10W20/41; H10W20/42; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
139 words
A method of forming a multilayered metal network for interconnecting components of a high-density integrated circuit, comprising forming on a substrate a lower metal layer comprising conductors having steep edges; applying a dielectric directly over said lower metal layer so that the conductors are covered by areas of the dielectric layer; applying a layer of a mineral spin-on-glass directly over said dielectric layer so as to form a thin film covering of spin-on-glass over said areas; controlling a reactive plasma for etching portions of said thin film of said spin-on-glass layer and the areas of said dielectric layer underlying the spin-on-glass layer to form flared vias which expose portions of the conductors of said lower metal layer; and applying an upper metal layer directly onto said spin-on-glass layer so as to cover said spin-on-glass layer and fill said vias.
Claim 2
Independent Claim
139 words
A method of forming a multilayered metal network for interconnecting components of a high-density integrated circuit, comprising forming on a substrate a lower metal layer comprising conductors having steep edges; applying a dielectric directly over said lower metal layer so that the conductors are covered by areas of the dielectric layer; applying a layer of a mineral spin-on-glass directly over said dielectric layer so as to form a thin film covering of spin-on-glass over said areas; controlling a reactive plasma for etching portions of said thin film of said spin-on-glass layer and the areas of said dielectric layer underlying the spin-on-glass layer to form flared vias which expose portions of the conductors of said lower metal layer; and applying an upper metal layer directly onto said spin-on-glass layer so as to cover said spin-on-glass layer and fill said vias.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein said etching comprises etching the spin-on-glass and dielectric layers using reactive plasma etching.
Claim 4
Dependent Claim
24 words
The method of claim 1, wherein said etching comprises controlling the etching to flare the vias and provide the vias with obtuse base angles.
Claim 5
Dependent Claim
23 words
The method of claim 1, wherein said applying the dielectric layer comprises applying the dielectric layer using chemical vapor deposition of silicon dioxide.
Claim 6
Independent Claim
143 words
A method of forming a multilayered metal network for interconnecting components of a high-density integrated circuit, comprising forming on a substrate a lower metal layer including conductors having steep edges; applying a dielectric layer directly over said lower metal layer using chemical vapor deposition of silicon dioxide; spreading a layer of spin-on-glass in the form of a viscous suspension of silicon dioxide directly onto said lower metal layer; annealing the spin-on-glass suspension layer; forming vias through said spin-on-glass and dielectric layers to expose portions of said conductors of said lower metal layer by using a reactive plasma etching process which is controlled to flare the vias and provide the vias with a frusto-conical section; and applying directly over said spin-on-glass layer as upper metal layer, the upper metal layer being applied so as to cover the spin-on-glass layer and to fill the vias.
Claim 7
Independent Claim
143 words
A method of forming a multilayered metal network for interconnecting components of a high-density integrated circuit, comprising forming on a substrate a lower metal layer including conductors having steep edges; applying a dielectric layer directly over said lower metal layer using chemical vapor deposition of silicon dioxide; spreading a layer of spin-on-glass in the form of a viscous suspension of silicon dioxide directly onto said lower metal layer; annealing the spin-on-glass suspension layer; forming vias through said spin-on-glass and dielectric layers to expose portions of said conductors of said lower metal layer by using a reactive plasma etching process which is controlled to flare the vias and provide the vias with a frusto-conical section; and applying directly over said spin-on-glass layer as upper metal layer, the upper metal layer being applied so as to cover the spin-on-glass layer and to fill the vias.
Claim 8
Dependent Claim
18 words
The method of claim 1, wherein the spin-on-glass is applied as a mineral silica-based gel in colloidal form.
Claim 9
Dependent Claim
24 words
The method of claim 6, wherein said etching comprises controlling the etching to flair the vias and provide the vias with obtuse base angles.
Claim 10
Dependent Claim
24 words
The method of claim 2, wherein said etching comprises controlling the etching to flair the vias and provide the vias with obtuse base angles.
Claim 11
Dependent Claim
23 words
The method of claim 6, wherein said applying the dielectric layer comprises applying the dielectric layer using chemical vapor deposition of silicon dioxide.
Claim 12
Dependent Claim
23 words
The method of claim 2, wherein said applying the dielectric layer comprises applying the dielectric layer using chemical vapor deposition of silicon dioxide.
Claim 13
Dependent Claim
23 words
The method of claim 3, wherein said applying the dielectric layer comprises applying the dielectric layer using chemical vapor deposition of silicon dioxide.
Claim 14
Dependent Claim
15 words
The method of claim 5, wherein said spreading comprises applying the spin-on-glass in colloidal form.
References Cited (Backward Citations)
US3506880A
Cited
US3542550A
Cited
US4305974A
Cited
JPS54101292A
Cited
US4349609A
Cited
EP0025261A1
Cited
US4222792A
Cited
JPS5759359A
Cited
US4436582A
Cited
JPS57170550A
Cited
EP0071010A2
Cited
JPS5819727A
Cited
US4576900A
Cited
JPS5886746A
Cited
US4604641A
Cited
US4523975A
Cited
JPS5966147A
Cited
US4451326A
Cited
EP0147203A2
Cited
US4654113A
Cited
US4481070A
Cited
US4523372A
Cited
US4519872A
Cited
US4545852A
Cited
US4541169A
Cited
JPS61180458A
Cited
US4674176A
Cited
US4681795A
Cited
JPS6230335A
Cited
US4662064A
Cited
US4676867A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-05 | 1993-09-04 | 1994-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-05 | 1997-09-04 | 1998-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-05 | 2001-09-04 | 2002-03-06 | $7700.00 | Window Closed / Lapsed |