Patent US4910169A successfully refreshed from Google Patents.
US4910169A
Expired / Lapsed
US
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Method of producing semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1987-09-17
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Granted: 1990-03-20
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Expires: 2007-09-17
Abstract
Abstract A method of producing a semiconductor device includes the steps of forming a metallization film including copper on a surface of a substrate, and depositing an insulating film on a surface of the metallization film at a temperature which is below the oxidation temperature of copper.
Inventors
- 👤 Kazuhiro Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10W20/056; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
68 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film at a temperature which is lower than an oxidation temperature of copper.
Claim 2
Independent Claim
68 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film at a temperature which is lower than an oxidation temperature of copper.
Claim 3
Dependent Claim
24 words
A method of producing a semiconductor device as claimed in claim 1, wherein the temperature at said depositing step is 200° C. or lower.
Claim 4
Dependent Claim
26 words
A method of producing a semiconductor device as claimed in claim 1, further comprising the steps of: annealing said semiconductor device after depositing the insulating film.
Claim 5
Independent Claim
72 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by a radio frequency sputtering process at a temperature less than the oxidation temperature of copper.
Claim 6
Independent Claim
72 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by a radio frequency sputtering process at a temperature less than the oxidation temperature of copper.
Claim 7
Dependent Claim
33 words
A method of producing a semiconductor device as claimed in claim 4, wherein said radio frequency sputtering process is carried out at a temperature which is less than or equal to 200° C.
Claim 8
Dependent Claim
34 words
A method of producing a semiconductor device as claimed in claim 4, wherein said insulating film is made of a material selected from the group consisting of silicon dioxide, phosphor-silicate glass and silicon nitride.
Claim 9
Dependent Claim
29 words
A method of producing a semiconductor device as claimed in claim 4, wherein said method further comprises the step of annealing said semiconductor device after depositing the insulating film.
Claim 10
Independent Claim
76 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by an electron cyclotron resonance plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper.
Claim 11
Independent Claim
76 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by an electron cyclotron resonance plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper.
Claim 12
Dependent Claim
37 words
A method of producing a semiconductor device as claimed in claim 8, wherein said electron cyclotron resonance plasma-assisted chemical vapor deposition process is carried out at a temperature which is less than or equal to 200° C.
Claim 13
Dependent Claim
32 words
A method of producing a semiconductor device as claimed in claim 8, wherein said insulating film is made of a material selected from the group consisting of silicon nitride and silicon dioxide.
Claim 14
Dependent Claim
26 words
A method of producing a semiconductor device as claimed in claim 8, further comprising the step of annealing said semiconductor device after depositing the insulating film.
Claim 15
Independent Claim
73 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by a plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper.
Claim 16
Independent Claim
73 words
A method of producing a semiconductor device comprising the steps of: forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by a plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper.
Claim 17
Dependent Claim
34 words
A method of producing a semiconductor device as claimed in claim 12, wherein said plasma-assisted chemical vapor deposition process is carried out at a temperature which is less than or equal to 200° C.
Claim 18
Dependent Claim
34 words
A method of producing a semiconductor device as claimed in claim 12, wherein said insulating film is made of a material selected from the group consisting of silicon oxide, phosphor-silicate glass and silicon nitride.
Claim 19
Dependent Claim
26 words
A method of producing a semiconductor device as claimed in claim 12, further comprising the step of annealing said semiconductor device after depositing the insulating film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-19 | 1993-09-18 | 1994-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-19 | 1997-09-18 | 1998-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-19 | 2001-09-18 | 2002-03-20 | $7700.00 | Window Closed / Lapsed |