Patent US4918031A successfully refreshed from Google Patents.
US4918031A
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Processes depending on plasma generation using a helical resonator
Assignee: Tokyo Electron Ltd
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Filing: 1988-12-28
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Granted: 1990-04-17
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Expires: 2008-12-28
Abstract
Abstract Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. A helical resonator in conjunction with suitable precursors is also quite useful for plasma induced deposition.
Inventors
- 👤 Daniel L. Flamm
- 👤 Dale E. Ibbotson
- 👤 Wayne L. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:52
CPC Classifications
H; H05; H05H; H05H1/00; H05H1/24; H05H1/26; H05H1/30; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H05H1/46; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3345; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
69 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities that induce anisotropic removal of material from said substrate and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said species is from a discharge in a gas at a pressure less than about 10 mTorr
Claim 2
Dependent Claim
69 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities that induce anisotropic removal of material from said substrate and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said species is from a discharge in a gas at a pressure less than about 10 mTorr
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said device comprises a semiconductor device.
Claim 4
Dependent Claim
16 words
The process of claim 1 wherein said helical resonator is subjected to an external magnetic field.
Claim 5
Dependent Claim
11 words
The process of claim 1 wherein said helical resonator is pulsed.
Claim 6
Dependent Claim
16 words
The process of claim 4 wherein said pulsing corresponds to an associated change in processing conditions.
Claim 7
Dependent Claim
15 words
The process of claim 5 wherein said change comprises a periodic varying of said gas.
Claim 8
Dependent Claim
15 words
The process of claim 1 wherein more than one of said helical resonators is employed.
Claim 9
Dependent Claim
21 words
The process of claim 1 wherein said resonator comprises a half wave resonator or a multiple of a half wave resonator.
Claim 10
Dependent Claim
17 words
The process of claim 8 wherein said helical resonator is grounded on both ends of the helix.
Claim 11
Dependent Claim
22 words
The process of claim 1 wherein said resonator comprises a quarter wave resonator or an odd multiple of a quarter wave resonator.
Claim 12
Dependent Claim
17 words
The process of claim 10 wherein said helical resonator is grounded on one end of said helix.
Claim 13
Dependent Claim
28 words
The process of claim 1 wherein an electric field, or a magnetic field, is employed to affect the course of said species from said resonator to said substrate.
Claim 14
Dependent Claim
20 words
The process of claim 1 wherein a longitudinally conducting member having relatively low conduction circumferentially is present in said resonator.
Claim 15
Dependent Claim
60 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition of entities and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said species is from a discharge in a gas at a pressure less than about 10 mTorr.
Claim 16
Dependent Claim
60 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition of entities and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said species is from a discharge in a gas at a pressure less than about 10 mTorr.
Claim 17
Dependent Claim
12 words
The process of claim 14 wherein said device comprises a semiconductor device.
Claim 18
Dependent Claim
15 words
The process of claim 14 wherein said helical resonator is subjected to an external field.
Claim 19
Dependent Claim
11 words
The process of claim 14 wherein said helical resonator is pulsed.
Claim 20
Dependent Claim
16 words
The process of claim 17 wherein said pulsing corresponds to an associated change in processing conditions.
Claim 21
Dependent Claim
15 words
The process of claim 18 wherein said change comprises a periodic varying of said gas.
Claim 22
Dependent Claim
21 words
The process of claim 14 wherein said resonator comprises a half wave resonator or a multiple of a half wave resonator.
Claim 23
Dependent Claim
17 words
The process of claim 20 wherein said helical resonator is grounded on both ends of the helix.
Claim 24
Dependent Claim
23 words
The process of claim 14 wherein said helical resonator is a quarter wave resonator or an odd multiple of a quarter wave resonator.
Claim 25
Dependent Claim
17 words
The process of claim 22 wherein said helical resonator is grounded on one end of said helix.
Claim 26
Dependent Claim
36 words
The process of claim 14 wherein an electric field, or a magnetic field, is employed to affect said species at said substrate or to affect the course of said species from said resonator to said substrate.
Claim 27
Dependent Claim
55 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities that induce deposition on said substrate and employ the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said substrate is within said resonator.
Claim 28
Dependent Claim
55 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities that induce deposition on said substrate and employ the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said substrate is within said resonator.
Claim 29
Dependent Claim
11 words
The process of claim 25 wherein said helical resonator is pulsed.
Claim 30
Dependent Claim
16 words
The process of claim 26 wherein said pulsing corresponds to an associated change in processing conditions.
Claim 31
Dependent Claim
18 words
The process of claim 27 wherein said change comprises a periodic varying of the composition of said gas.
Claim 32
Dependent Claim
20 words
The process of claim 25 wherein a longitudinally conducting member having relatively low conduction circumferentially is present in said resonator.
Claim 33
Dependent Claim
13 words
The process of claim 25 wherein a bias is applied to said substrates.
Claim 34
Dependent Claim
58 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said resonator comprises a half wave, multiple half wave, or odd multiple quarter wave resonator.
Claim 35
Dependent Claim
58 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator wherein said resonator comprises a half wave, multiple half wave, or odd multiple quarter wave resonator.
Claim 36
Dependent Claim
13 words
The process of claim 31 wherein said species is implanted in said substrate.
Claim 37
Dependent Claim
17 words
The process of claim 31 wherein said species interacts with a second species to form said entity.
Claim 38
Dependent Claim
15 words
The process of claim 33 wherein said second species is introduced downstream from said resonator.
Claim 39
Dependent Claim
14 words
The process of claim 31 wherein an electrical bias is applied to said substrates.
Claim 40
Dependent Claim
20 words
The process of claim 31 wherein a longitudinally conducting member having relatively low conduction circumferentially is present in said resonator.
Claim 41
Dependent Claim
53 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator and said species interacts downstream with a second gas phase species.
Claim 42
Dependent Claim
53 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities and employing the resulting substrate for completion of said device, characterized in that said entity emanates from a species generated in a helical resonator and said species interacts downstream with a second gas phase species.
Claim 43
Dependent Claim
50 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities and employing the resulting substrate for completion of said device characterized in that said entity is at least in part generated due to a pulsing process in association with a helical resonator.
Claim 44
Dependent Claim
50 words
A process for fabricating a device comprising the steps of subjecting a substrate to a composition comprising entities and employing the resulting substrate for completion of said device characterized in that said entity is at least in part generated due to a pulsing process in association with a helical resonator.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-04-16 | 1993-10-16 | 1994-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-16 | 1997-10-16 | 1998-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-16 | 2001-10-16 | 2002-04-17 | $7700.00 | Window Closed / Lapsed |