US4979004A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Floating gate memory cell and device
Assignee: Texas Instruments Inc
•
Filing: 1990-01-23
•
Granted: 1990-12-18
•
Expires: 2010-01-23
Abstract
Abstract One embodiment of the invention provides an EPROM and a method of fabricating an EPROM with enhanced capacitive coupling. Trenched memory cells each comprise a pleat-shaped floating gate with the control gate nested in a fold of the floating gate to increase the coupling ratio with the control gate. As a result higher programming speed and improved cell density may be obtained for a given programming voltage. Formation of bit lines along trench walls results in lower bit line resistivity for a given cell density.
Inventors
- 👤 Agerico L. Esquivel
- 👤 Allan T. Mitchell
- 👤 Howard L. Tigelaar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:32
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10B; H10B69/00; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
119 words
A nonvolatile storage device comprising: a substrate having a trench formed therein; a first doped region formed on the surface of said trench; a second doped region formed on the surface of said trench, said second doped region being separated from said first doped region by a channel region said channel region being disposed in said trench; an insulating layer formed on the surfaces of said trench; a conductive layer formed on said insulating layer, said conductive layer extending onto the surface of said substrate; a second insulating layer formed on the surface of said first conductive layer; a second conductive layer formed on said second insulator layer, said second conductive layer extending onto the surface of said substrate.
Claim 2
Dependent Claim
119 words
A nonvolatile storage device comprising: a substrate having a trench formed therein; a first doped region formed on the surface of said trench; a second doped region formed on the surface of said trench, said second doped region being separated from said first doped region by a channel region said channel region being disposed in said trench; an insulating layer formed on the surfaces of said trench; a conductive layer formed on said insulating layer, said conductive layer extending onto the surface of said substrate; a second insulating layer formed on the surface of said first conductive layer; a second conductive layer formed on said second insulator layer, said second conductive layer extending onto the surface of said substrate.
Claim 3
Dependent Claim
12 words
A device as in claim 1 wherein said substrate comprises crystalline silicon.
Claim 4
Dependent Claim
16 words
A device as in claim 1 wherein said first and second conductive layers comprise polycrystalline silicon.
Claim 5
Dependent Claim
16 words
A device as in claim 1 wherein said first and second insulating layers comprise silicon dioxide.
Claim 6
Dependent Claim
36 words
A device as in claim 1 wherein said second conductive layer extends the width of an array comprising said devices and said first and second doped regions extend the length of said array of said devices.
Claim 7
Dependent Claim
22 words
A device as in claim 1 wherein said first conductive layer extends out of said trench onto the surface of said substrate.
Claim 8
Dependent Claim
22 words
A device as in claim 1 wherein said second conductive layer extends out of said trench onto the surface of said substrate.
Claim 9
Dependent Claim
129 words
A memory device comprising: a semiconductor structure having a first surface and first and second trenches formed beneath the first surface, said structure including a partition along the surface to separate the trenches, said partition having first and second opposing sides, the first side defining a first wall portion in the first trench and the second side defining a first wall portion in the second trench, each trench further including a bottom surface distinct from the first wall portion and positioned such that each first wall potion extends from the first surface to a bottom surface; first and second bitlines each positioned along a different first wall portion and extending toward a bottom surface; and a memory cell having source and drain electrodes each coupled to a different bitline.
Claim 10
Dependent Claim
129 words
A memory device comprising: a semiconductor structure having a first surface and first and second trenches formed beneath the first surface, said structure including a partition along the surface to separate the trenches, said partition having first and second opposing sides, the first side defining a first wall portion in the first trench and the second side defining a first wall portion in the second trench, each trench further including a bottom surface distinct from the first wall portion and positioned such that each first wall potion extends from the first surface to a bottom surface; first and second bitlines each positioned along a different first wall portion and extending toward a bottom surface; and a memory cell having source and drain electrodes each coupled to a different bitline.
Claim 11
Dependent Claim
21 words
The device of claim 8 wherein said memory cell includes a conduction channel formed between the first and second bit lines.
Claim 12
Dependent Claim
18 words
The device of claim 9 wherein said conduction channel is formed along an upper surface of said partition.
Claim 13
Dependent Claim
17 words
The device of claim 9 wherein said memory cell includes a control gate formed over said partition.
Claim 14
Dependent Claim
23 words
The device of claim 11 wherein said memory cell further comprises a floating gate positioned between said conduction channel and said control gate.
Claim 15
Dependent Claim
18 words
The device of claim 12 wherein said floating gate is formed in a pleat shape about said partition.
Claim 16
Dependent Claim
22 words
The device of claim 13 wherein said control gate comprises a pleat shaped portion formed about said floating gate for capacitive coupling.
Claim 17
Dependent Claim
20 words
The memory device of claim 8 wherein each bitline is formed over a first wall portion and a bottom surface.
Claim 18
Dependent Claim
101 words
A memory cell formed on a semiconductor structure having a trench formed along first surface thereof, the trench including a bottom surface and first and second wall portions, each wall portion extending from the bottom surface to the first surface, said memory cell comprising: a pair of source and drain electrodes each positioned along a different wall portion; a conduction channel region between the source and drain electrodes; a pleat shaped floating gate formed within the trench and electrically isolated from the source and drain electrodes; and a pleat shaped control gate formed within the trench and over said floating gate.
Claim 19
Dependent Claim
101 words
A memory cell formed on a semiconductor structure having a trench formed along first surface thereof, the trench including a bottom surface and first and second wall portions, each wall portion extending from the bottom surface to the first surface, said memory cell comprising: a pair of source and drain electrodes each positioned along a different wall portion; a conduction channel region between the source and drain electrodes; a pleat shaped floating gate formed within the trench and electrically isolated from the source and drain electrodes; and a pleat shaped control gate formed within the trench and over said floating gate.
Claim 20
Dependent Claim
20 words
The memory cell of claim 16 wherein said control gate extends out of the trench and along the first surface.
Claim 21
Dependent Claim
24 words
The memory cell of claim 16 wherein said floating gate is electrically isolated from the source and drain electrodes by a silicon dioxide layer.
Claim 22
Dependent Claim
24 words
The memory cell of claim 16 further comprising a silicon dioxide layer, positioned between said floating gate and said control gate for electrical isolation.
Claim 23
Dependent Claim
22 words
The memory cell of claim 16 wherein the source and drain electrodes extend along the trench wall portions toward the bottom surface.
Claim 24
Dependent Claim
22 words
The memory cell of claim 16 wherein the source and drain electrodes extend along the trench wall portions to the bottom surface.
References Cited (Backward Citations)
US4222062A
Cited
US4199772A
Cited
US4169291A
Cited
JPS53118981A
Cited
US4163988A
Cited
US4222063A
Cited
JPS56126973A
Cited
US4364074A
Cited
JPS596188A
Cited
US4542396A
Cited
JPS5978576A
Cited
US4590504A
Cited
JPS59154071A
Cited
JPS61144879A
Cited
US4763177A
Cited
US4713677A
Cited
US4774556A
Cited
US4814840A
Cited
JPS6272171A
Cited
US4698900A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-17 | 1994-06-18 | 1994-12-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-17 | 1998-06-18 | 1998-12-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-17 | 2002-06-18 | 2002-12-18 | $7700.00 | Window Closed / Lapsed |