Patent US3070779A successfully refreshed from Google Patents.
Patent US5079609A successfully refreshed from Google Patents.
US5079609A
Expired / Lapsed
US
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Semiconductor device having dielectric breakdown protection element and method of fabricating same
Assignee: Mitsubishi Electric Corp
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Filing: 1989-12-19
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Granted: 1992-01-07
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Expires: 2009-12-19
Abstract
Abstract A semiconductor device exposed to irradiation (21, 22) of charged particles in a fabrication process thereof includes: at least a first conductive region (3, 1) and a second conductive region (4a, 4b) formed at different positions, electrically insulated from each other; a third coductive region (8 , 9) provided at least over the first conductive region (3, 1) and the second conductive region (4a, 4b); a first insulator layer region (5, 7) sandwiched between the first conductive region (3, 1) and the third conductive region (8, 9) to insulate the first and third conductive regions from each other; and a second insulator layer region (6a, 6b) sandwiched between the second conductive region (4a, 4b) and the third conductive region (8, 9) to insulate the second and third conductive regions from each other, and the second conductive region (4a, 4b) has a portion shaped to cause dielectric breakdown to be more liable to occur in the second insulator layer region (6a, 6b) than in the first insulator layer region (5, 7).
Inventors
- 👤 Hiroshi Takagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:41
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
154 words
A semiconductor device exposed to irradiation of charged particles in a fabrication process thereof, comprising: at least a first conductive region and a second conductive region formed at different positions and electrically insulated from each other, a third conductive region provided at least on said first conductive region and said second conductive region, a first insulator region sandwiched between said first conductive region and said third conductive region to insulate said first and third conductive regions from each other, and a second insulator layer region sandwiched between said second conductive region and said third conductive region to insulate said second and third conductive region from each other, said second conductive region having a portion shaped to cause dielectric breakdown to be more liable to occur in said second insulator layer region than in said first insulator layer region when said third conductive region is charged by being exposed to said irradiation of charged particles.
Claim 2
Dependent Claim
154 words
A semiconductor device exposed to irradiation of charged particles in a fabrication process thereof, comprising: at least a first conductive region and a second conductive region formed at different positions and electrically insulated from each other, a third conductive region provided at least on said first conductive region and said second conductive region, a first insulator region sandwiched between said first conductive region and said third conductive region to insulate said first and third conductive regions from each other, and a second insulator layer region sandwiched between said second conductive region and said third conductive region to insulate said second and third conductive region from each other, said second conductive region having a portion shaped to cause dielectric breakdown to be more liable to occur in said second insulator layer region than in said first insulator layer region when said third conductive region is charged by being exposed to said irradiation of charged particles.
Claim 3
Dependent Claim
19 words
A semiconductor device in accordance with claim 1, wherein said second conductive region is approximately a triangle in section.
Claim 4
Dependent Claim
20 words
A semiconductor device in accordance with claim 2, wherein said second conductive region is approximately an isosceles triangle in section.
Claim 5
Dependent Claim
20 words
A semiconductor device in accordance with claim 2, wherein said second conductive region has an apex of an acute angle.
Claim 6
Dependent Claim
68 words
A semiconductor device in accordance with claim 1, wherein said first conductive region is a semiconductor substrate, said third conductive region is a gate electrode of a field effect transistor formed on said semiconductor substrate, said first insulator layer region is a gate dielectric layer of said field effect transistor, and said irradiation of charged particles includes ion irradiation for forming source/drain regions of said field effect transistor.
Claim 7
Dependent Claim
26 words
A semiconductor device in accordance with claim 5, wherein said second conductive region is provided on an oxide film for isolation formed on said semiconductor substrate.
Claim 8
Dependent Claim
23 words
A semiconductor device in accordance with claim 5, wherein said irradiation of charged particles includes plasma etching for anisotropically etching an oxide layer.
Claim 9
Dependent Claim
59 words
A semiconductor device in accordance with claim 1, wherein said first conductive region is a first capacitor electrode of a capacitor provided on an oxide film for isolation formed on a semiconductor substrate, said first insulator layer region is a capacitor dielectric layer of said capacitor, and said third conductive region is a second capacitor electrode of said capacitor.
Claim 10
Dependent Claim
22 words
A semiconductor device in accordance with claim 8, wherein said second conductive region is also formed on said oxide film for isolation.
Claim 11
Dependent Claim
31 words
A semiconductor device in accordance with claim 8, wherein said irradiation of charged particles includes ion irradiation for forming source/drain regions of a field effect transistor formed on said semiconductor substrate.
Claim 12
Dependent Claim
23 words
A semiconductor device in accordance with claim 8, wherein said irradiation of charged particles includes plasma etching for anisotropically etching an oxide layer.
Claim 13
Dependent Claim
17 words
A semiconductor device in accordance with claim 1, wherein said second conductive region is formed of polysilicon.
Claim 14
Dependent Claim
30 words
A semiconductor device in accordance with claim 1, wherein said semiconductor device is found on a substrate and second conductive region is formed on a major surface of said substrate.
Claim 15
Dependent Claim
129 words
A semiconductor device formed on a substrate, comprising: first and second conductive regions formed spaced apart on a major surface of said substrate and electrically insulated from each other, a third conductive region provided on said first conductive region and said second conductive region, a first insulator region sandwiched between said first conductive region and said third conductive region to insulate said first and third conductive regions from each other, and a second insulator layer region sandwiched between said second conductive region and said third conductive region to insulate said second and third conductive regions from each other, said second conductive region having a portion shaped to cause dielectric breakdown to be more liable to occur in said second insulator layer region than in said first insulator layer region.
Claim 16
Dependent Claim
129 words
A semiconductor device formed on a substrate, comprising: first and second conductive regions formed spaced apart on a major surface of said substrate and electrically insulated from each other, a third conductive region provided on said first conductive region and said second conductive region, a first insulator region sandwiched between said first conductive region and said third conductive region to insulate said first and third conductive regions from each other, and a second insulator layer region sandwiched between said second conductive region and said third conductive region to insulate said second and third conductive regions from each other, said second conductive region having a portion shaped to cause dielectric breakdown to be more liable to occur in said second insulator layer region than in said first insulator layer region.
Claim 17
Dependent Claim
17 words
A semiconductor device in accordance with claim 14, wherein said second conductive region is formed of polysilicon.
Claim 18
Dependent Claim
20 words
A semiconductor device in accordance with claim 1, wherein the entire second conductive region is approximately a triangle in section.
Claim 19
Dependent Claim
21 words
A semiconductor device in accordance with claim 2, wherein the entire second conductive region is approximately an isosceles triangle in section.
Claim 20
Dependent Claim
21 words
A semiconductor device in accordance with claim 2, wherein the entire second conductive region has an apex of an acute angle.
References Cited (Backward Citations)
GB1171874A
Cited
DE1965799A1
Cited
US4288829A
Cited
US4072976A
Cited
US4190854A
Cited
JPS5591173A
Cited
US4486769A
Cited
JPS56138955A
Cited
JPS56158479A
Cited
US4456939A
Cited
US4713357A
Cited
US4735915A
Cited
JPS6072228A
Cited
US4851894A
Cited
US4935801A
Cited
US4941028A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |