Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
135 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting low-voltage circuit nodes to which said low-voltage circuit elements are connected from destruction by application of said programming voltage during programming of said integrated circuit, comprising a NAND gate, said NAND gate having a first input connected to a circuit node upon which said programming voltage may appear, said first input configured to withstand said programming voltage, a second input connected to a control logic signal at voltage levels compatible with operation of said low-voltage circuits, and an output connected to at least one of said low-voltage circuit elements.
Claim 2
Dependent Claim
135 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting low-voltage circuit nodes to which said low-voltage circuit elements are connected from destruction by application of said programming voltage during programming of said integrated circuit, comprising a NAND gate, said NAND gate having a first input connected to a circuit node upon which said programming voltage may appear, said first input configured to withstand said programming voltage, a second input connected to a control logic signal at voltage levels compatible with operation of said low-voltage circuits, and an output connected to at least one of said low-voltage circuit elements.
Claim 3
Dependent Claim
172 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting a first, low-voltage, circuit node to which said low-voltage circuit elements is connected from destruction by application of said programming voltage to a second, high voltage, circuit node which may carry high voltage during programming of said integrated circuit, comprising: a control node; a P-channel MOS transistor having a gate connected to second circuit node, a source connected to a first voltage source for said low-voltage circuit elements, and a drain connected to said first circuit node, said P-channel MOS transistor fabricated to withstand said programming voltage; an N-channel MOS transistor having a gate connected to second circuit node, and a drain connected to said first circuit node, and a source connected to said control node, said N-channel MOS transistor fabricated to withstand said programming voltage.
Claim 4
Dependent Claim
172 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting a first, low-voltage, circuit node to which said low-voltage circuit elements is connected from destruction by application of said programming voltage to a second, high voltage, circuit node which may carry high voltage during programming of said integrated circuit, comprising: a control node; a P-channel MOS transistor having a gate connected to second circuit node, a source connected to a first voltage source for said low-voltage circuit elements, and a drain connected to said first circuit node, said P-channel MOS transistor fabricated to withstand said programming voltage; an N-channel MOS transistor having a gate connected to second circuit node, and a drain connected to said first circuit node, and a source connected to said control node, said N-channel MOS transistor fabricated to withstand said programming voltage.
Claim 5
Dependent Claim
253 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting a first, low-voltage, circuit node to which said low-voltage circuit elements is connected from destruction by application of said programming voltage to a second, high voltage, circuit node which may carry high voltage during programming of said integrated circuit, comprising: a control node; a first P-channel MOS transistor having a gate connected to second circuit node, a source connected to a first voltage source for said low-voltage circuit elements, and a drain connected to said first circuit node, said first P-channel MOS transistor fabricated to withstand said programming voltage; a first N-channel MOS transistor having a gate connected to second circuit node, and a drain connected to said first circuit node, and a source, said first N-channel MOS transistor fabricated to withstand said programming voltage; a second N-channel MOS transistor having a drain connected to said source of said first N-channel MOS transistor, a source connected to a second voltage source for said low-voltage circuit elements, said second voltage source at a lower potential than said first voltage source, and a gate connected to said control node; a second P-channel MOS transistor having a source connected to said first voltage source, a drain connected to said first circuit node, and a gate connected to said control node.
Claim 6
Dependent Claim
253 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting a first, low-voltage, circuit node to which said low-voltage circuit elements is connected from destruction by application of said programming voltage to a second, high voltage, circuit node which may carry high voltage during programming of said integrated circuit, comprising: a control node; a first P-channel MOS transistor having a gate connected to second circuit node, a source connected to a first voltage source for said low-voltage circuit elements, and a drain connected to said first circuit node, said first P-channel MOS transistor fabricated to withstand said programming voltage; a first N-channel MOS transistor having a gate connected to second circuit node, and a drain connected to said first circuit node, and a source, said first N-channel MOS transistor fabricated to withstand said programming voltage; a second N-channel MOS transistor having a drain connected to said source of said first N-channel MOS transistor, a source connected to a second voltage source for said low-voltage circuit elements, said second voltage source at a lower potential than said first voltage source, and a gate connected to said control node; a second P-channel MOS transistor having a source connected to said first voltage source, a drain connected to said first circuit node, and a gate connected to said control node.
Claim 7
Dependent Claim
221 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting a first, low-voltage, circuit node to which said low-voltage circuit elements is connected from destruction by application of said programming voltage to a second, high voltage, circuit node which may carry high voltage during programming of said integrated circuit, comprising: a control node; a first P-channel MOS transistor having a gate connected to second circuit node, a source connected to a first voltage source for said low-voltage circuit elements, and a drain connected to said first circuit node, said first P-channel MOS transistor fabricated to withstand said programming voltage; an N-channel MOS transistor having a gate connected to second circuit node, and a drain connected to said first circuit node, and a source, said N-channel MOS transistor fabricated to withstand said programming voltage; a second P-channel MOS transistor having a source connected to said first voltage source, a drain connected to said first circuit node, and a gate connected to said control node; in inverter having an input connected to said control node and an output connected to said source of said N-channel MOS transistor.
Claim 8
Dependent Claim
221 words
In a user-configurable integrated circuit employing low-voltage circuit elements which may be interconnected by user-programmable interconnection elements which may be programmed by a programming voltage having a magnitude larger than the voltage which can be withstood by said low-voltage circuit elements, an isolation circuit for protecting a first, low-voltage, circuit node to which said low-voltage circuit elements is connected from destruction by application of said programming voltage to a second, high voltage, circuit node which may carry high voltage during programming of said integrated circuit, comprising: a control node; a first P-channel MOS transistor having a gate connected to second circuit node, a source connected to a first voltage source for said low-voltage circuit elements, and a drain connected to said first circuit node, said first P-channel MOS transistor fabricated to withstand said programming voltage; an N-channel MOS transistor having a gate connected to second circuit node, and a drain connected to said first circuit node, and a source, said N-channel MOS transistor fabricated to withstand said programming voltage; a second P-channel MOS transistor having a source connected to said first voltage source, a drain connected to said first circuit node, and a gate connected to said control node; in inverter having an input connected to said control node and an output connected to said source of said N-channel MOS transistor.