Patent US5128283A successfully refreshed from Google Patents.
← Back to Patent Explorer
US5128283A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming mask alignment marks

Assignee: NEC Electronics Corp
•
Filing: 1989-06-08
•
Granted: 1992-07-07
•
Expires: 2009-06-08
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method of producing a semiconductor device including processes of forming an optically transparent film on a semiconductor substrate having an alignment mark, and thereafter forming an optically opaque film, includes the step of selectively etching said transparent film to remove at least a part thereof disposed above said alignment mark, and thereafter forming said optically opaque film on said semiconductor substrate. A method of producing a semiconductor device including a step of making a measurement mark formed on a semiconductor substrate for measuring relative error amount caused during alignment inlcudes the steps of forming an optically transparent film on said semiconductor substrate provisionally formed with an aligning pattern of said measurement mark, thereafter selectively etching said transparent film to remove a region thereof above said aligning pattern of said measurement mark and to remove another region thereof for a later formed to-be-aligned pattern, thereafter forming an optically opaque film on said semiconductor substrate, and then coating a photo-sensitive film and carrying out exposue and development so as to form a remaining to-be-aligned pattern of said measurement mark.

Inventors

  • 👤 Koukiti Tanaka

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 17:45
CPC Classifications
H; H10; H10W; H10W46/00; H10W46/501; Y; Y10; Y10S; Y10S438/00; Y10S438/975

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 64 words
A method of producing a semiconductor device including processes of forming an optically transparent film on a semiconductor substrate having an alignment mark, and thereafter forming an optically opaque film, the method comprising the steps of: selectively etching said transparent film to remove at least a part thereof disposed above said alignment mark; and thereafter forming said optically opaque film on said semiconductor substrate.
Claim 2
Independent Claim 64 words
A method of producing a semiconductor device including processes of forming an optically transparent film on a semiconductor substrate having an alignment mark, and thereafter forming an optically opaque film, the method comprising the steps of: selectively etching said transparent film to remove at least a part thereof disposed above said alignment mark; and thereafter forming said optically opaque film on said semiconductor substrate.
Claim 3
Dependent Claim 39 words
A method as claimed in claim 1; including the steps of, after forming said optically opaque film, coating a photosensitive organic film, and carrying out positioning and exposure with using said alignment mark by means of an exposure instrument.
Claim 4
Independent Claim 118 words
A method of producing a semiconductor device including a step of making a measurement mark formed on a semiconductor substrate for measuring relative error amount caused during alignment, the method comprising the steps of: forming an optically transparent film on said semiconductor substrate provisionally formed with an aligning pattern of said measurement mark; thereafter selectively etching said transparent film to remove a region thereof above said aligning pattern of said measurement mark and to remove another region thereof for a later formed to-be-aligned pattern; thereafter forming an optically opaque film on said semiconductor substrate; and then coating a photo-sensitive film and carrying out exposure and development so as to form a remaining to-be-aligned pattern of said measurement mark.
Claim 5
Independent Claim 118 words
A method of producing a semiconductor device including a step of making a measurement mark formed on a semiconductor substrate for measuring relative error amount caused during alignment, the method comprising the steps of: forming an optically transparent film on said semiconductor substrate provisionally formed with an aligning pattern of said measurement mark; thereafter selectively etching said transparent film to remove a region thereof above said aligning pattern of said measurement mark and to remove another region thereof for a later formed to-be-aligned pattern; thereafter forming an optically opaque film on said semiconductor substrate; and then coating a photo-sensitive film and carrying out exposure and development so as to form a remaining to-be-aligned pattern of said measurement mark.
Claim 6
Dependent Claim 33 words
A method as claimed in claim 3 including the step of: measuring the relative error amount caused during alignment with using said measurement mark so as to determine whether said alignment is acceptable.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-07-07 1996-01-06 1996-07-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-07-07 2000-01-06 2000-07-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-07-07 2004-01-06 2004-07-07 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag