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US5136540A
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Non-volatile semiconductor memory for volatiley and non-volatiley storing information and writing method thereof
Assignee: Seiko Instruments Inc
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Filing: 1990-03-12
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Granted: 1992-08-04
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Expires: 2010-03-12
Abstract
Abstract A nonvolatile memory has integrated memory cells each operative to carry out writing and reading of information on a random-access basis and each having an electric charge storage structure effective to memorize the information in a nonvolatile state. The information is temporarily written into each memory cell in a volatile state, and thereafter the temporarily written information is written at once into a respective electric charge storage structure of each memory cell, thereby effecting high speed writing of nonvolatile information into the respective memory cells.
Inventors
- 👤 Yutaka Hayashi
- 👤 Yoshikazu Kojima
- 👤 Ryoji Takada
- 👤 Masaaki Kamiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:17
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; G; G11; G11C; G11C14/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10D30/6891; H10D30/6892
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
149 words
A semiconductor nonvolatile memory having a plurality of integrated memory cells, each memory cell comprising: a first semiconductor region having a first surface, an electric charge storage structure for storing electric charge and disposed over the first surface with a first insulating film formed therebetween, a first control gate region for controlling the potential of the electric charge storage structure and being electrically coupled through a second insulating film to the electric charge storage structure, a second region electrically connected to the first surface, a second gate disposed over the electric charge storage structure with a third film formed therebetween and electrically coupled to the electric charge storage structure, and random-access potential setting means connected to the first control gate region for setting a random-access potential thereto; whereby the first control gate region nonvolatilely controls the potential of the electric charge storage structure in response to the random-access potential.
Claim 2
Dependent Claim
149 words
A semiconductor nonvolatile memory having a plurality of integrated memory cells, each memory cell comprising: a first semiconductor region having a first surface, an electric charge storage structure for storing electric charge and disposed over the first surface with a first insulating film formed therebetween, a first control gate region for controlling the potential of the electric charge storage structure and being electrically coupled through a second insulating film to the electric charge storage structure, a second region electrically connected to the first surface, a second gate disposed over the electric charge storage structure with a third film formed therebetween and electrically coupled to the electric charge storage structure, and random-access potential setting means connected to the first control gate region for setting a random-access potential thereto; whereby the first control gate region nonvolatilely controls the potential of the electric charge storage structure in response to the random-access potential.
Claim 3
Independent Claim
209 words
A method of writing in a semiconductor nonvolatile memory having integrated memory cells, each memory cell comprising a first semiconductor region having a first surface, an electric charge storage structure disposed over the first surface with a first insulating film formed therebetween, a first control gate region for controlling the potential of the electric charge storage structure and being electrically coupled through a second insulating film to the electric charge storage structure, a second region electrically connected to the first surface, a second gate disposed over the electric charge storage structure with a third film formed therebetween and electrically coupled to the electric charge storage structure, and random-access potential setting means connected to the first control gate region, the method comprising the steps of: temporarily writing volatile information by applying a corresponding given volatile potential to the first control gate region of each memory cell through the random-access potential setting means, and thereafter applying a nonvolatile writing voltage according to a nonvolatile writing instruction to the respective second gate of each memory cell to be written with the information so as to nonvolatilely write the information corresponding to the applied volatile potential of the first control gate region into the respective electric charge storage structure of each memory cell.
Claim 4
Independent Claim
209 words
A method of writing in a semiconductor nonvolatile memory having integrated memory cells, each memory cell comprising a first semiconductor region having a first surface, an electric charge storage structure disposed over the first surface with a first insulating film formed therebetween, a first control gate region for controlling the potential of the electric charge storage structure and being electrically coupled through a second insulating film to the electric charge storage structure, a second region electrically connected to the first surface, a second gate disposed over the electric charge storage structure with a third film formed therebetween and electrically coupled to the electric charge storage structure, and random-access potential setting means connected to the first control gate region, the method comprising the steps of: temporarily writing volatile information by applying a corresponding given volatile potential to the first control gate region of each memory cell through the random-access potential setting means, and thereafter applying a nonvolatile writing voltage according to a nonvolatile writing instruction to the respective second gate of each memory cell to be written with the information so as to nonvolatilely write the information corresponding to the applied volatile potential of the first control gate region into the respective electric charge storage structure of each memory cell.
Claim 5
Dependent Claim
178 words
A semiconductor memory cell formed on a substrate comprising: storage means disposed over the substrate with a first insulating film disposed therebetween for storing electric charge to memorize nonvolatile information; injecting means for injecting electric charge into the storage means; first control means electrically coupled to and disposed adjacent to the storage means through a second insulating film and operable to temporarily store volatile information in the form of a potential level effective to control a potential level of storage means; random access means for setting the potential level of the first control means on a random access basis to temporarily write volatile information into the first control means; and second control means electrically coupled to and disposed adjacent to the storage means with a third insulting film disposed therebetween for applying thereto a control voltage to effect the injection of electric charge from the injecting means to the storage means according to the potential level of the first control means to thereby enable the storage means to memorize nonvolatile information corresponding to the temporarily written volatile information.
Claim 6
Dependent Claim
178 words
A semiconductor memory cell formed on a substrate comprising: storage means disposed over the substrate with a first insulating film disposed therebetween for storing electric charge to memorize nonvolatile information; injecting means for injecting electric charge into the storage means; first control means electrically coupled to and disposed adjacent to the storage means through a second insulating film and operable to temporarily store volatile information in the form of a potential level effective to control a potential level of storage means; random access means for setting the potential level of the first control means on a random access basis to temporarily write volatile information into the first control means; and second control means electrically coupled to and disposed adjacent to the storage means with a third insulting film disposed therebetween for applying thereto a control voltage to effect the injection of electric charge from the injecting means to the storage means according to the potential level of the first control means to thereby enable the storage means to memorize nonvolatile information corresponding to the temporarily written volatile information.
Claim 7
Dependent Claim
17 words
A semiconductor memory cell according to claim 3; wherein the storage means comprises a floating gate electrode.
Claim 8
Dependent Claim
37 words
A semiconductor memory cell according to claim 3; wherein the injecting means comprises a drain region and a source region, and a channel region disposed under the storage means between the drain region and the source region.
Claim 9
Dependent Claim
29 words
A semiconductor memory cell according to claim 3; wherein the first control means comprises a gate region disposed under the storage means and capacitively coupled to the storage means.
Claim 10
Dependent Claim
29 words
A semiconductor memory cell according to claim 3; wherein the first control means comprises a gate electrode disposed over the storage means and capacitively coupled to the storage means.
Claim 11
Dependent Claim
29 words
A semiconductor memory cell according to claim 3; wherein the second control means comprises a gate electrode disposed over the storage means and capacitively coupled to the storage means.
Claim 12
Dependent Claim
65 words
A semiconductor memory cell according to claim 3; wherein the random access means comprises input means disposed in spaced relation from the first control means to define therebetween a channel region for inputting volatile information to the first control means through the channel region, and gate means disposed over the channel region for controlling the conductivity of the channel region on the random access basis.
Claim 13
Dependent Claim
27 words
A semiconductor memory cell according to claim 9; wherein the random-access means includes a switching transistor connected to the gate means to effect the random access thereof.
Claim 14
Dependent Claim
27 words
A semiconductor memory cell according to claim 9; wherein the input means, the gate means and the first control means are comprised of a thin film transistor.
Claim 15
Dependent Claim
159 words
A semiconductor memory cell comprising: volatile memory means for volatilely storing information and comprising a control gate region and random-access potential setting means electrically connected to the control gate region for receiving the information and applying a first potential corresponding thereto to the control gate region; and non-volatile memory means for non-volatilely storing the information and comprising charge storage means for storing a charge and capacitively coupled to the control gate region, gate means for receiving a control voltage and electrically connected to the charge storage means, and injecting means for injecting a charge to be stored into the charge storage means corresponding to a second potential applied to the charge storage means, whereby the second potential is applied to the charge storage means in response to the control voltage received by the gate means and the second potential corresponds to the first potential to thereby effect non-volatile storage of the information in the form of the stored charge.
Claim 16
Dependent Claim
159 words
A semiconductor memory cell comprising: volatile memory means for volatilely storing information and comprising a control gate region and random-access potential setting means electrically connected to the control gate region for receiving the information and applying a first potential corresponding thereto to the control gate region; and non-volatile memory means for non-volatilely storing the information and comprising charge storage means for storing a charge and capacitively coupled to the control gate region, gate means for receiving a control voltage and electrically connected to the charge storage means, and injecting means for injecting a charge to be stored into the charge storage means corresponding to a second potential applied to the charge storage means, whereby the second potential is applied to the charge storage means in response to the control voltage received by the gate means and the second potential corresponds to the first potential to thereby effect non-volatile storage of the information in the form of the stored charge.
Claim 17
Dependent Claim
17 words
A semiconductor memory cell according to claim 12; wherein the storage means comprises a floating gate electrode.
Claim 18
Dependent Claim
37 words
A semiconductor memory cell according to claim 12; wherein the injecting means comprises a drain region and a source region formed in a substrate, and a channel region disposed between the drain region and the source regions.
Claim 19
Dependent Claim
31 words
A semiconductor memory cell according to claim 12; wherein the control gate region comprises a gate region disposed under the charge storage means and capacitively coupled to the charge storage means.
Claim 20
Dependent Claim
31 words
A semiconductor memory cell according to claim 12; wherein the control gate region comprises a gate electrode disposed over the charge storage means and capacitively coupled to the charge storage means.
Claim 21
Dependent Claim
30 words
A semiconductor memory cell according to claim 12; wherein the gate means comprises a gate electrode disposed over the charge storage means and capacitively coupled to the charge storage means.
Claim 22
Dependent Claim
63 words
A semiconductor memory cell according to claim 12; wherein the random-access potential setting means comprises input means for receiving the information and disposed in spaced relation from the control gate region to define therebetween a channel region for inputting volatile information to first control gate region through the channel region for controlling the conductivity of the channel region on a random access basis.
Claim 23
Dependent Claim
30 words
A semiconductor memory cell according to claim 18; wherein the random-access potential setting means includes a switching transistor connected to the second gate means to effect the random access thereof.
Claim 24
Dependent Claim
27 words
A semiconductor memory cell according to claim 18; wherein the input means, the second gate means and the control gate region jointly comprise a thin film transistor.
Claim 25
Independent Claim
126 words
A method of storing information nonvolatilely in a memory cell, comprising the steps of: volatilely storing information by supplying the information to a random-access potential setting means, and applying by the random-access potential setting means a first potential corresponding to the information to a control gate region; and non-volatilely storing the information by applying a control voltage to a gate means to apply a second potential to a charge storage means to inject a charge into the charge storage means by an injecting means, whereby the second potential corresponds to the first potential and the injecting means injects a charge into the charge storage means which corresponds to the second potential to thereby effect non-volatile storage of the information in the form of the stored charge.
Claim 26
Independent Claim
126 words
A method of storing information nonvolatilely in a memory cell, comprising the steps of: volatilely storing information by supplying the information to a random-access potential setting means, and applying by the random-access potential setting means a first potential corresponding to the information to a control gate region; and non-volatilely storing the information by applying a control voltage to a gate means to apply a second potential to a charge storage means to inject a charge into the charge storage means by an injecting means, whereby the second potential corresponds to the first potential and the injecting means injects a charge into the charge storage means which corresponds to the second potential to thereby effect non-volatile storage of the information in the form of the stored charge.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-04 | 1996-02-03 | 1996-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-04 | 2000-02-03 | 2000-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-04 | 2004-02-03 | 2004-08-04 | $7700.00 | Window Closed / Lapsed |