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US5160404A
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Method of removing a patterned multilevel resist from a surface layer on a substrate
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1990-12-05
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Granted: 1992-11-03
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Expires: 2010-12-05
Abstract
Abstract A method for removing a patterned multilevel resist formed on a substrate where layer of a substrate, the multilevel resist has a lower resist layer and an upper resist layer formed on the lower resist layer, and where the upper resist layer contains silicon atoms. The method includes forming a resin layer on the lower resist layer and on a surface exposed from the patterned multilevel resist, and etching the resin layer and the patterned multilevel resist by a first dry etching process using halogen containing gas until the upper resist layer is removed. The resin layer and the multilevel resist, which have remained after the first dry etching process, are etched by a second dry etching process using oxygen containing gas.
Inventors
- 👤 Takushi Motoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:38
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
119 words
A method for removing a patterned multilevel resist formed on a substrate layer of a substrate, the multilevel resist having a lower resist layer and an upper resist layer formed on the lower resist layer, the upper resist layer containing silicon atoms, comprising the steps of: forming a resin layer on the lower resist layer and on a surface exposed from the patterned multilevel resist; etching said resin layer and the patterned multilevel resist by a first dry etching process using halogen containing gas until the upper resist layer is removed; and etching the resin layer and the multilevel resist, which have remained after said first dry etching process, by a second dry etching process using oxygen containing gas.
Claim 2
Independent Claim
119 words
A method for removing a patterned multilevel resist formed on a substrate layer of a substrate, the multilevel resist having a lower resist layer and an upper resist layer formed on the lower resist layer, the upper resist layer containing silicon atoms, comprising the steps of: forming a resin layer on the lower resist layer and on a surface exposed from the patterned multilevel resist; etching said resin layer and the patterned multilevel resist by a first dry etching process using halogen containing gas until the upper resist layer is removed; and etching the resin layer and the multilevel resist, which have remained after said first dry etching process, by a second dry etching process using oxygen containing gas.
Claim 3
Dependent Claim
27 words
A method for removing a patterned multilevel resist according to claim 1, wherein said second dry etching process is a plasma etching process using oxygen containing gas.
Claim 4
Dependent Claim
49 words
A method for removing a patterned multilevel resist according to claim 1, wherein said second dry etching process is an etching process using a downstream of O 2 plasma, which is defined as neutral gas flowing down from the plasma and containing neutral radicals but no ions and electrons.
Claim 5
Dependent Claim
33 words
A method for removing a patterned multilevel resist according to claim 1, wherein the upper resist layer comprises an organic material containing silicon which can be patterned by an energy beam exposure process.
Claim 6
Dependent Claim
36 words
A method for removing a patterned multilevel resist according to claim 1, wherein the lower resist layer comprises an organic material and the upper resist layer comprises a selective silylized surface of the lower resist layer.
Claim 7
Dependent Claim
34 words
A method for removing a patterned multilevel resist according to claim 1, wherein the upper resist layer is patterned by an etching process using a mask that is formed on the upper resist layer.
Claim 8
Dependent Claim
28 words
A method for removing a patterned multilevel resist according to claim 6, wherein the upper resist layer comprises one of SiO 2 and a spin on glass (SOG).
Claim 9
Dependent Claim
28 words
A method for removing a patterned multilevel resist according to claim 1, wherein the resin layer comprises one of a novolak resin, methacrylic resin and styrene derivative resin.
Claim 10
Dependent Claim
46 words
A method for removing patterned multilevel resist according to claim 1, wherein the halogen containing gas contains one of F 2 , CF 4 , CF 3 , C 2 F 6 , Cl 2 , CCl 4 , Br 2 , NF 3 and HBr.
Claim 11
Dependent Claim
45 words
A method for removing a patterned multilevel resist according to claim 1, wherein the surface layer of the substrate comprises one of silicon oxide, a phosphosilicate glass (PSG) film, a borophosphosilicate glass (BPSG) film, silicon nitride, polycrystalline silicon, single crystalline silicon, tungsten, and tungsten silicide.
Claim 12
Dependent Claim
31 words
A method for removing a patterned multilevel resist according to claim 1, wherein said method for removing a patterned multilevel resist is carried out when the patterned multilevel resist is defective.
Claim 13
Dependent Claim
42 words
A method for removing a patterned multilevel resist according to claim 1, wherein said method for removing a patterned multilevel resist is carried out after the surface layer of the substrate is etched by an etching process using the patterned multilevel resist.
Claim 14
Independent Claim
100 words
A method for processing a patterned multilevel resist including a lower resist layer and an upper resist layer formed on the lower resist layer, comprising the steps of: forming a resin layer on the lower resist layer and on a surface exposed by the patterned multilevel resist; etching the resin layer and the patterned multilevel resist by a first dry etching process using halogen containing gas until the upper resist layer is removed; and etching the resin layer and the patterned multilevel resist remaining after the first dry etching process, by a second dry etching process using oxygen containing gas.
Claim 15
Independent Claim
100 words
A method for processing a patterned multilevel resist including a lower resist layer and an upper resist layer formed on the lower resist layer, comprising the steps of: forming a resin layer on the lower resist layer and on a surface exposed by the patterned multilevel resist; etching the resin layer and the patterned multilevel resist by a first dry etching process using halogen containing gas until the upper resist layer is removed; and etching the resin layer and the patterned multilevel resist remaining after the first dry etching process, by a second dry etching process using oxygen containing gas.
Claim 16
Dependent Claim
21 words
A method according to claim 13, wherein said second dry etching process is a plasma etching process using oxygen containing gas.
Claim 17
Dependent Claim
41 words
A method according to claim 13, wherein the halogen containing gas contains one of F 2 , CF 4 , CF 3 , C 2 F 6 , Cl 2 , CCl 4 , Br 2 , Nf 3 and HBr.
References Cited (Backward Citations)
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