US5171718A
Expired / Lapsed
US
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Method for forming a fine pattern by using a patterned resist layer
Assignee: Sony Corp
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Filing: 1991-01-09
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Granted: 1992-12-15
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Expires: 2011-01-09
Abstract
Abstract A fine pattern formation using an electron beam induced resist, and use of the resist in making semiconductor devices are disclosed. Collimated electron beam is irradiated and scanned along a desired pattern on a layer on which a resist layer of a desired pattern is deposited under an atmosphere containing a starting material layer for the resist. The resist thus deposited is partially removed by reactive ion etching to remove the skirt like portion of the resist layer, or totally removed by reactive ion etching during or after processing by using the resist layer as a processing mask. Since the resist layer width is determined by a diameter of the collimated electron beam, line width of less than hundred Å can be directly drawn. There are also disclosed processes using the resist layer in manufacturing semiconductor devices.
Inventors
- 👤 Akira Ishibashi
- 👤 Yoshifumi Mori
- 👤 Kenji Funato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:27
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/20; G03F7/2041; Y; Y10; Y10S; Y10S148/00; Y10S148/10; Y10S148/131; Y10S148/137; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
154 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of: (a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, (b) directing a collimated charged particle ray on said layer from at least two directions and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, said patterned resist layer having a wider width at the top of said patterned resist layer than a width at the bottom of said patterned resist layer, (c) etching said layer by using said patterned resist layer as an etching mask to expose portions of the substrate, and (d) removing said patterned resist layer by reactive ion etching.
Claim 2
Independent Claim
154 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of: (a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, (b) directing a collimated charged particle ray on said layer from at least two directions and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, said patterned resist layer having a wider width at the top of said patterned resist layer than a width at the bottom of said patterned resist layer, (c) etching said layer by using said patterned resist layer as an etching mask to expose portions of the substrate, and (d) removing said patterned resist layer by reactive ion etching.
Claim 3
Dependent Claim
12 words
A method according to claim 1, said layer is a semiconductor layer.
Claim 4
Dependent Claim
27 words
A method according to claim 1, said substrate is a semiconductor substrate and said layer is a metal layer which forms schottky contact to said semiconductor substrate.
Claim 5
Dependent Claim
39 words
A method according to claim 3, further comprising a step of depositing a metal layer by using said patterned resist layer as a deposition mask, and said metal forms an ohmic contact with the exposed portion of said substrate.
Claim 6
Independent Claim
162 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of: a) placing a substrate having a first layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said first layer as a desired resist pattern, b) directing a collimated charged particle ray on said first layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) forming a metal layer over any uncovered portions of said first layer on said substrate and said patterned resist layer, d) removing said patterned resist layer by reactive ion etching to exposed surface portions of the first layer free of the metal layer, and then e) depositing a third layer on the exposed surface portions of the first layer with the metal layer being a deposition mask.
Claim 7
Independent Claim
162 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of: a) placing a substrate having a first layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said first layer as a desired resist pattern, b) directing a collimated charged particle ray on said first layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) forming a metal layer over any uncovered portions of said first layer on said substrate and said patterned resist layer, d) removing said patterned resist layer by reactive ion etching to exposed surface portions of the first layer free of the metal layer, and then e) depositing a third layer on the exposed surface portions of the first layer with the metal layer being a deposition mask.
Claim 8
Independent Claim
47 words
A method according to claims 1 or 5, said reactive ion etching is carried out under the condition that gaseous pressure is larger than (3×10/L) Pa and electrical power density is larger than 0/3 W/cm 2 , wherein L represents a distance between a pair of electrodes.
Claim 9
Dependent Claim
24 words
A method according to claim 5, wherein said substrate is formed of semiconductor material and said metal forms an ohmic contact to said substrate.
Claim 10
Dependent Claim
25 words
A method according to claim 7, wherein the step of depositing a third layer applies another metal which forms a schottky contact with said substrate.
Claim 11
Independent Claim
179 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of: a) placing a substrate having a first layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing starting material gas to be deposited on said first layer as a desired resist pattern, b) directing a collimated charged particle ray on said first layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) applying a first reactive ion etching process to said patterned resist layer under such condition that a skirt portion of said patterned resist layer adjacent to said first layer is removed, d) forming a metal layer over said first layer on said substrate and said patterned resist layer, e) removing said patterned resist layer by a second reactive ion etching process to create exposed portions of the first layer, and then f) applying a third layer on the exposed portions of the first layer with the metal layer being a deposition mask.
Claim 12
Independent Claim
179 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of: a) placing a substrate having a first layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing starting material gas to be deposited on said first layer as a desired resist pattern, b) directing a collimated charged particle ray on said first layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) applying a first reactive ion etching process to said patterned resist layer under such condition that a skirt portion of said patterned resist layer adjacent to said first layer is removed, d) forming a metal layer over said first layer on said substrate and said patterned resist layer, e) removing said patterned resist layer by a second reactive ion etching process to create exposed portions of the first layer, and then f) applying a third layer on the exposed portions of the first layer with the metal layer being a deposition mask.
Claim 13
Dependent Claim
47 words
A method according to claim 9, said first reactive ion etching process is carried out under the condition that gaseous pressure is less than (3×10/L) Pa and electrical power density is less than 0.3 W/cm 2 , wherein L represents a distance between a pair of electrodes.
Claim 14
Dependent Claim
14 words
A method according to claim 9, wherein said third layer is a semiconductor layer.
Claim 15
Independent Claim
146 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of: (a) providing a substrate with a first and second layer; (b) removing portions of the first layer to form a pattern layer with surfaces on the second layer; (c) placing the substrate with the patterned layer in an evacuated chamber, said chamber containing a starting material gas to be deposited on said patterned layer; (d) directing a collimated charged particle ray on said patterned layer and scanning along said patterned layer to form a resist layer induced from said starting material gas on the surfaces of the patterned layer; (e) etching exposed portions of the second layer with the resist layer forming an etching mask to expose portions of the substrate, then (f) applying a third layer of material on the resist layer and exposed portion of the substrate.
Claim 16
Independent Claim
146 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of: (a) providing a substrate with a first and second layer; (b) removing portions of the first layer to form a pattern layer with surfaces on the second layer; (c) placing the substrate with the patterned layer in an evacuated chamber, said chamber containing a starting material gas to be deposited on said patterned layer; (d) directing a collimated charged particle ray on said patterned layer and scanning along said patterned layer to form a resist layer induced from said starting material gas on the surfaces of the patterned layer; (e) etching exposed portions of the second layer with the resist layer forming an etching mask to expose portions of the substrate, then (f) applying a third layer of material on the resist layer and exposed portion of the substrate.
Claim 17
Independent Claim
18 words
A method according to claims 12, 1, 5 or 9, said charged particle ray is an electron beam.
Claim 18
Independent Claim
24 words
A method according to claims 12, 1, 5 or 9, said evacuated chamber contains said starting material gas of 10 -5 ˜10 -8 Torr.
Claim 19
Independent Claim
17 words
A method according to claims 12, 1, 5 or 9, said starting material gas is hydrocarbon gas.
References Cited (Backward Citations)
US3997367A
Cited
US4197332A
Cited
JPS56122143A
Cited
DE3015034A1
Cited
EP0077445A2
Cited
US4440804A
Cited
DE3231457A1
Cited
US4514233A
Cited
US4523976A
Cited
EP0171068A2
Cited
US4566937A
Cited
US4634496A
Cited
US4803181A
Cited
JPS63122122A
Cited
US4771017A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-12-15 | 1996-06-15 | 1996-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-15 | 2000-06-15 | 2000-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-15 | 2004-06-15 | 2004-12-15 | $7700.00 | Window Closed / Lapsed |