US5178989A
Expired / Lapsed
US
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Pattern forming and transferring processes
Assignee: Intellectual Ventures Holding 40 LLC
•
Filing: 1989-07-21
•
Granted: 1993-01-12
•
Expires: 2009-07-21
Abstract
Abstract Pattern forming and transferring processes using radiation sensitive materials based upon mixtures of polyoxometalates and organic compounds. The processes involve establishing a layer of such radiation sensitve material on one or more layers of underlying materials. A pattern is formed in the layer of radiation sensitive material by exposing selected areas of the layer to radiation. The pattern may then be transferred into the underlying layers of material. Methods for developing patterns in layers of radiation sensitive materials, so as to hinder leaching of etch resistant substances included in the radiation sensitive materials, are also provided.
Inventors
- 👤 Adam Heller
- 👤 Joseph C. Carls
- 👤 Panagiotis Argitis
- 👤 John J. Meaux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:35
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/36; G03F7/004; G03F7/0042; G03F7/0045; G03F7/038; G03F7/09; G03F7/094; G03F7/30; G03F7/32
Claims Analysis
Total Claims: 86
Claim 1
Independent Claim
75 words
A process for transferring a pattern from a layer of radiation sensitive material into an underlying second material, comprising the steps of: establishing a layer of radiation sensitive material on a second material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation; and transferring the pattern into the underlying second material.
Claim 2
Dependent Claim
75 words
A process for transferring a pattern from a layer of radiation sensitive material into an underlying second material, comprising the steps of: establishing a layer of radiation sensitive material on a second material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation; and transferring the pattern into the underlying second material.
Claim 3
Dependent Claim
12 words
The process of claim 1, wherein the organic compound comprises a polymer.
Claim 4
Dependent Claim
14 words
The process of claim 2, wherein the polymer includes a plurality of hydroxyl groups.
Claim 5
Dependent Claim
14 words
The process of claim 2, wherein the polymer includes a plurality of amide groups.
Claim 6
Dependent Claim
26 words
The process of claim 1, wherein the polyoxometalate includes metal atoms selected from one or more of the following metals: tungsten, molybdenum, niobium, vanadium, and tantalum.
Claim 7
Dependent Claim
11 words
The process of claim 1, wherein the polyoxometalate comprises a heteropolyoxometalate.
Claim 8
Dependent Claim
24 words
The process of claim 6, wherein the heteropolyoxometalate includes heteroatoms selected from the group of phosphorus, silicon, germanium, cobalt, hydrogen, iron, arsenic, and boron.
Claim 9
Dependent Claim
26 words
The process of claim 6, wherein the heteropolyoxometalate molecules have a ratio of heteroatoms:metal (addenda) atoms of 1:6, 1:9, 1:11, 1:12, 2:17, 2:18, 2:19, or 2:21.
Claim 10
Dependent Claim
11 words
The process of claim 1, wherein the polyoxometalate comprises an isopolyoxometalate.
Claim 11
Dependent Claim
18 words
The process of claim 1, wherein the polyoxometalate molecules have between about 6 and 18 metal (addenda) atoms.
Claim 12
Dependent Claim
24 words
The process of claim 1, wherein the layer establishing step comprises spin coating a solution containing the radiation sensitive material onto the second material.
Claim 13
Dependent Claim
10 words
The process of claim 11, wherein the solvent comprises water.
Claim 14
Dependent Claim
25 words
The process of claim 1, further comprising the step of developing the pattern in the layer of radiation sensitive material prior to the transferring step.
Claim 15
Dependent Claim
22 words
The process of claim 13, wherein the pattern developing step comprises removing the exposed areas of the layer of radiation sensitive material.
Claim 16
Dependent Claim
26 words
The process of claim 14, wherein the exposed areas of the layer of radiation sensitive material are removed by dissolving said areas in aqueous sulfuric acid.
Claim 17
Dependent Claim
50 words
The process of claim 14, further comprising the step of heating the layer of radiation sensitive material prior to the developing step under such conditions to increase the solubility of the exposed areas of radiation sensitive material, or to decrease the solubility of the unexposed areas of radiation sensitive material.
Claim 18
Dependent Claim
22 words
The process of claim 13, wherein the pattern developing step comprises removing the unexposed areas of the layer of radiation sensitive material.
Claim 19
Dependent Claim
26 words
The process of claim 17, wherein the unexposed areas of the layer of radiation sensitive material are removed by dissolving said areas in aqueous phosphoric acid.
Claim 20
Dependent Claim
50 words
The process of claim 17, further comprising the step of heating the layer of radiation sensitive material prior to the developing step under such conditions to decrease the solubility of the exposed areas of radiation sensitive material, or to increase the solubility of the unexposed areas of radiation sensitive material.
Claim 21
Dependent Claim
30 words
The process of claim 13, wherein the pattern developing step comprises dissolving either the exposed or the unexposed areas of radiation sensitive material in an aqueous solution of a polyoxometalate.
Claim 22
Dependent Claim
22 words
The process of claim 20, wherein the polyoxometalate in the solvent is the same as the polyoxometalate in the radiation sensitive material.
Claim 23
Dependent Claim
48 words
The process of claim 13, wherein either the exposed or unexposed areas of radiation sensitive material are removed by dissolving said areas in a solvent having a sufficiently high electrolyte concentration such that the undissolved areas of the radiation sensitive material substantially do not swell in the solvent.
Claim 24
Dependent Claim
20 words
The process of claim 13, wherein the pattern transferring step comprises implanting ions into uncovered areas of the second material.
Claim 25
Dependent Claim
30 words
The process of claim 1, wherein the pattern transferring step comprises etching the second material with an ionized gas, the radiation sensitive material being etch resistant to the ionized gas.
Claim 26
Dependent Claim
16 words
The process of claim 24, wherein the gas molecules are directed anisotropically in an electric field.
Claim 27
Dependent Claim
12 words
The process of claim 24 or 25, wherein the gas comprises oxygen.
Claim 28
Dependent Claim
15 words
The process of claim 24 or 25, wherein the gas comprises a halogen containing gas.
Claim 29
Dependent Claim
15 words
The process of claim 27, wherein the halogen containing gas comprises a fluorine containing gas.
Claim 30
Dependent Claim
28 words
The process of claim 1, wherein the pattern transferring step comprises etching the second material with a solvent, the radiation sensitive material being etch resistant to the solvent.
Claim 31
Dependent Claim
17 words
The process of claim 1, further comprising the step of stripping the layer of radiation sensitive material.
Claim 32
Dependent Claim
20 words
The process of claim 30, wherein the layer stripping step comprises etching the radiation sensitive material with an ionized gas.
Claim 33
Dependent Claim
15 words
The process of claim 31, wherein the gas comprises oxygen and a halogen containing gas.
Claim 34
Dependent Claim
97 words
A process for transferring a pattern from a layer of radiation sensitive material into underlying layers of materials, comprising the steps of: establishing a layer of first material on a second material; establishing a layer of radiation sensitive material on the layer of first material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation; transferring the pattern into the underlying layer of first material; and transferring the pattern into the underlying second material.
Claim 35
Dependent Claim
97 words
A process for transferring a pattern from a layer of radiation sensitive material into underlying layers of materials, comprising the steps of: establishing a layer of first material on a second material; establishing a layer of radiation sensitive material on the layer of first material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation; transferring the pattern into the underlying layer of first material; and transferring the pattern into the underlying second material.
Claim 36
Dependent Claim
31 words
The process of claim 33, wherein the first pattern transferring step comprises etching the first material with an ionized gas, the radiation sensitive material being etch resistant to the ionized gas.
Claim 37
Dependent Claim
22 words
The process of claim 33, wherein the organic compound in the radiation sensitive material is stripped during the first pattern transferring step.
Claim 38
Dependent Claim
30 words
The process of claim 33, wherein the second pattern transferring step comprises etching the second material with an ionized gas, the first material being etch resistant to the ionized gas.
Claim 39
Dependent Claim
21 words
The process of claim 33, wherein the polyoxometalate in the radiation sensitive material is stripped during the second pattern transferring step.
Claim 40
Dependent Claim
102 words
A process for transferring a pattern from a layer of a first radiation sensitive material into a second radiation sensitive material, comprising the steps of: establishing a layer of a first radiation sensitive material on a radiation transparent material, the first radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; photolithographically forming a pattern in the layer of first radiation sensitive material; reducing the polyoxometalate such that the patterned first radiation sensitive material becomes opaque to radiation; and transferring the pattern into a second radiation sensitive material by irradiating the second radiation sensitive material through the opaque pattern.
Claim 41
Dependent Claim
102 words
A process for transferring a pattern from a layer of a first radiation sensitive material into a second radiation sensitive material, comprising the steps of: establishing a layer of a first radiation sensitive material on a radiation transparent material, the first radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; photolithographically forming a pattern in the layer of first radiation sensitive material; reducing the polyoxometalate such that the patterned first radiation sensitive material becomes opaque to radiation; and transferring the pattern into a second radiation sensitive material by irradiating the second radiation sensitive material through the opaque pattern.
Claim 42
Dependent Claim
20 words
The process of claim 38, further comprising the step of oxidizing the organic compound prior to the pattern transferring step.
Claim 43
Dependent Claim
101 words
A process for making a mask for use in transferring a pattern by radiation, comprising the steps of: establishing a layer of radiation sensitive material on a radiation transparent material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation; removing either the exposed or the unexposed areas of the layer of radiation sensitive material; and reducing the polyoxometalate in the remaining areas of the layer of radiation sensitive material such that said material becomes opaque to radiation.
Claim 44
Dependent Claim
101 words
A process for making a mask for use in transferring a pattern by radiation, comprising the steps of: establishing a layer of radiation sensitive material on a radiation transparent material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation; removing either the exposed or the unexposed areas of the layer of radiation sensitive material; and reducing the polyoxometalate in the remaining areas of the layer of radiation sensitive material such that said material becomes opaque to radiation.
Claim 45
Dependent Claim
14 words
The process of claim 40, further comprising the step of oxidizing the organic compound.
Claim 46
Dependent Claim
22 words
The process of claim 38 or 40, wherein the polyoxometalate is reduced in the reducing step such that the pattern becomes metallic.
Claim 47
Dependent Claim
61 words
A microlithographic process for transferring a pattern into a substrate, comprising: establishing a resist layer on a substrate, the resist comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the resist layer by exposing selected areas of the resist layer to radiation; developing the pattern in the resist layer; and transferring the pattern into the substrate.
Claim 48
Dependent Claim
61 words
A microlithographic process for transferring a pattern into a substrate, comprising: establishing a resist layer on a substrate, the resist comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the resist layer by exposing selected areas of the resist layer to radiation; developing the pattern in the resist layer; and transferring the pattern into the substrate.
Claim 49
Dependent Claim
19 words
The process of claim 43, wherein the pattern transferring step comprises implanting ions into uncovered areas of the substrate.
Claim 50
Dependent Claim
17 words
The process of claim 43, wherein the pattern transferring step comprises etching the pattern into the substrate.
Claim 51
Dependent Claim
23 words
The process of claim 45, wherein the substrate is etched with a solvent, the radiation sensitive material being etch resistant to the solvent.
Claim 52
Dependent Claim
18 words
The process of claim 46, wherein the solvent comprises aqueous HCl, HF, or H 3 PO 4 .
Claim 53
Dependent Claim
23 words
The process of claim 45, wherein the substrate is etched with an ionized gas, the organic compound being etch resistant to the gas.
Claim 54
Dependent Claim
13 words
The process of claim 48, wherein the gas comprises a halogen containing gas.
Claim 55
Dependent Claim
15 words
The process of claim 49, wherein the halogen containing gas comprises a fluorine containing gas.
Claim 56
Dependent Claim
22 words
The process of claim 43, wherein the resist layer establishing step comprises spin coating a solution containing the resist onto the substrate.
Claim 57
Dependent Claim
82 words
A microlithographic process for etching a pattern into a substrate, comprising: establishing a layer of organic material on a substrate; establishing a resist layer on the layer of organic material, the resist comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the resist layer by exposing selected areas of the resist layer to radiation; developing the pattern in the resist layer; etching the pattern into the layer of organic material; and etching the pattern into the substrate.
Claim 58
Dependent Claim
82 words
A microlithographic process for etching a pattern into a substrate, comprising: establishing a layer of organic material on a substrate; establishing a resist layer on the layer of organic material, the resist comprising a mixture of an organic compound and a polyoxometalate; forming a pattern in the resist layer by exposing selected areas of the resist layer to radiation; developing the pattern in the resist layer; etching the pattern into the layer of organic material; and etching the pattern into the substrate.
Claim 59
Dependent Claim
57 words
The process of claim 52, wherein the first etching step comprises etching the layer of organic material with a first ionized gas, the polyoxometalate being etch resistant to the first ionized gas, and the second etching step comprises etching the substrate with a second ionized gas, the organic material being etch resistant to the second ionized gas.
Claim 60
Dependent Claim
18 words
The process of claim 48 or 53, wherein the gas molecules are directed anisotropically in an electric field.
Claim 61
Dependent Claim
12 words
The process of claim 53, wherein the first ionized gas comprises oxygen.
Claim 62
Dependent Claim
15 words
The process of claim 53, wherein the second ionized gas comprises a halogen containing gas.
Claim 63
Dependent Claim
15 words
The process of claim 56, wherein the halogen containing gas comprises a fluorine containing gas.
Claim 64
Dependent Claim
25 words
The process of claim 52, wherein the resist layer establishing step comprises spin coating a solution containing the resist onto the layer of organic material.
Claim 65
Dependent Claim
12 words
The process of claim 51 or 58, wherein the solvent comprises water.
Claim 66
Dependent Claim
14 words
The process of claim 43 or 52 wherein the organic compound comprises a polymer.
Claim 67
Dependent Claim
28 words
The process of claim 43 or 52, wherein the polyoxometalate includes metal atoms selected from one or more of the following metals: tungsten, molybdenum, niobium, vanadium and tantalum.
Claim 68
Dependent Claim
21 words
The process of claim 43 or 52, wherein the pattern developing step comprises removing the exposed areas of the resist layer.
Claim 69
Dependent Claim
23 words
The process of claim 62, wherein the exposed areas of the resist layer are removed by dissolving said areas in aqueous sulfuric acid.
Claim 70
Dependent Claim
47 words
The process of claim 62, further comprising the step of heating the resist layer prior to the developing step under such conditions to increase the solubility of the exposed areas of the resist layer or to decrease the solubility of the unexposed areas of the resist layer.
Claim 71
Dependent Claim
24 words
The process of claim 43 or 52, wherein the pattern developing step comprises removing the unexposed areas of the layer of radiation sensitive material.
Claim 72
Dependent Claim
23 words
The process of claim 65, wherein the unexposed areas of the resist layer are removed by dissolving said areas in aqueous phosphoric acid.
Claim 73
Dependent Claim
46 words
The process of claim 65, further comprising the step of heating the resist layer prior to the developing step under such conditions to decrease the solubility of the exposed areas of the resist layer or to increase the solubility of unexposed areas of the resist layer.
Claim 74
Dependent Claim
32 words
The process of claim 43 or 52, wherein the pattern developing step comprises dissolving either the exposed or the unexposed areas of the resist layer in an aqueous solution of a polyoxometalate.
Claim 75
Dependent Claim
20 words
The process of claim 68, wherein the polyoxometalate in the solvent is the same as the polyoxometalate in the resist.
Claim 76
Dependent Claim
48 words
The process of claim 43 or 52, wherein the exposed or unexposed areas of the resist layer are removed by dissolving said areas in a solvent having a sufficiently high ionic strength such that the undissolved areas of the resist layer substantially do not swell in the solvent.
Claim 77
Independent Claim
74 words
A method for developing a layer of radiation sensitive material containing an etch resistant substance, said etch resistant substance comprising a polyoxometalate, in such a manner so as to hinder leaching of the etch resistant substance, the layer of radiation sensitive material including areas which have been exposed to radiation, the method comprising dissolving either the exposed areas or the unexposed areas of radiation sensitive material in a solution containing the etch resistant substance.
Claim 78
Independent Claim
74 words
A method for developing a layer of radiation sensitive material containing an etch resistant substance, said etch resistant substance comprising a polyoxometalate, in such a manner so as to hinder leaching of the etch resistant substance, the layer of radiation sensitive material including areas which have been exposed to radiation, the method comprising dissolving either the exposed areas or the unexposed areas of radiation sensitive material in a solution containing the etch resistant substance.
Claim 79
Dependent Claim
41 words
The method of claim 71, wherein the solution of etch resistant substance has a sufficiently high electrolyte concentration such that the areas of the radiation sensitive material which are not dissolved in the solution substantially do not swell in the solution.
Claim 80
Independent Claim
91 words
A method for developing a layer or radiation sensitive material containing an etch resistance substance, said etch resistant substance comprising a polyoxometalate, in such a manner so as to hinder leaching of the etch resistant substance, the layer of radiation sensitive material including areas which have been exposed to radiation, the method comprising dissolving either the exposed areas or the unexposed areas of radiation sensitive material in a solvent having a sufficiently high electrolyte concentration such that the undissolved areas of radiation sensitive material substantially do not swell in the solvent.
Claim 81
Independent Claim
91 words
A method for developing a layer or radiation sensitive material containing an etch resistance substance, said etch resistant substance comprising a polyoxometalate, in such a manner so as to hinder leaching of the etch resistant substance, the layer of radiation sensitive material including areas which have been exposed to radiation, the method comprising dissolving either the exposed areas or the unexposed areas of radiation sensitive material in a solvent having a sufficiently high electrolyte concentration such that the undissolved areas of radiation sensitive material substantially do not swell in the solvent.
Claim 82
Dependent Claim
68 words
A process for forming an electrically conducting pattern on a surface, comprising the steps of: establishing a layer of radiation sensitive material on a surface, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; photolithographically forming a pattern in the layer of first radiation sensitive material; and oxidizing the organic compound and reducing the polyoxometalate such that the patterned layer becomes electrically conducting.
Claim 83
Dependent Claim
68 words
A process for forming an electrically conducting pattern on a surface, comprising the steps of: establishing a layer of radiation sensitive material on a surface, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate; photolithographically forming a pattern in the layer of first radiation sensitive material; and oxidizing the organic compound and reducing the polyoxometalate such that the patterned layer becomes electrically conducting.
Claim 84
Dependent Claim
20 words
The process of claim 74, further comprising the step of establishing a layer of metal on the electrically conducting pattern.
Claim 85
Dependent Claim
11 words
The process of claim 74, wherein the surface comprises polycrystalline silicon.
Claim 86
Dependent Claim
12 words
The process of claim 75, wherein the layer of metal comprises aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-12 | 1996-07-13 | 1997-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-12 | 2000-07-13 | 2001-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-12 | 2004-07-13 | 2005-01-12 | $7700.00 | Window Closed / Lapsed |