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US5219775A
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Manufacturing method for a floating gate semiconductor memory device by forming cell slits
Assignee: Toshiba Corp
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Filing: 1992-02-18
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Granted: 1993-06-15
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Expires: 2012-02-18
Abstract
Abstract A manufacturing method of a semiconductor memory device includes the steps of selectively forming a field oxide film and a gate oxide film on a semiconductor substrate, depositing a first conductive layer on an entire surface of the resultant structure, selectively etching the first conductive layer located in a region other than an element region, depositing a second conductive layer on an entire surface of the resultant structure, and etching the first conductive layer and the second conductive layer using the same mask to form a plurality of floating gates by the first conductive layer and to form a plurality of control gates by the second conductive layer, wherein the step of selectively etching the first conductive layer includes the first etching step of forming cell slits for separating the plurality of floating gates from each other and the second etching step of forming removed regions each of which includes only one end of each of the plurality of control gates.
Inventors
- 👤 Yukihiro Saeki
- 👤 Osamu Matsumoto
- 👤 Masayuki Yoshida
- 👤 Takahide Mizutani
- 👤 Nobuyoshi Chida
- 👤 Tomohisa Shigematsu
- 👤 Teruo Uemura
- 👤 Kenji Toyoda
- 👤 Hiroyuki Takamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:27
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; Y; Y10; Y10S; Y10S148/00; Y10S148/106
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
184 words
A manufacturing method of a semiconductor memory device, comprising the steps of: selectively forming a field oxide film and a first gate oxide film on a semiconductor substrate; depositing a first conductive layer on an entire surface of the field oxide film and the first gate oxide film; selectively etching said first conductive layer located in a region other than an element region; forming a second gate oxide film on the first conductive layer; depositing a second conductive layer on an entire surface of the first and second gate oxide films; and etching said first conductive layer and said second conductive layer using the same mask to form a plurality of floating gates by said first conductive layer and to form a plurality of control gates by said second conductive layer; wherein the step of selectively etching said first conductive layer includes a first etching step of removing cell slits for separating said plurality of floating gates from each other and a second etching step of forming removed regions each of which includes only one end of each of said plurality of control gates.
Claim 2
Dependent Claim
184 words
A manufacturing method of a semiconductor memory device, comprising the steps of: selectively forming a field oxide film and a first gate oxide film on a semiconductor substrate; depositing a first conductive layer on an entire surface of the field oxide film and the first gate oxide film; selectively etching said first conductive layer located in a region other than an element region; forming a second gate oxide film on the first conductive layer; depositing a second conductive layer on an entire surface of the first and second gate oxide films; and etching said first conductive layer and said second conductive layer using the same mask to form a plurality of floating gates by said first conductive layer and to form a plurality of control gates by said second conductive layer; wherein the step of selectively etching said first conductive layer includes a first etching step of removing cell slits for separating said plurality of floating gates from each other and a second etching step of forming removed regions each of which includes only one end of each of said plurality of control gates.
Claim 3
Dependent Claim
17 words
A manufacturing method according to claim 1, wherein the first and second etching steps are simultaneously performed.
Claim 4
Dependent Claim
34 words
A manufacturing method according to claim 1, wherein each of said removed regions each of which includes one end of each of said control gates includes a part or all of a contact region.
Claim 5
Dependent Claim
199 words
A manufacturing method of a semiconductor memory device, comprising the steps of: selectively forming a field oxide film and a first gate oxide film on a semiconductor substrate; depositing a first conductive layer on an entire surface of the field oxide film and the first gate oxide film, selectively etching said first conductive layer located in region other than an element region; forming a second gate oxide film on the first conductive layer; depositing a second conductive layer on an entire surface of the first and second gate oxide film; and etching said first conductive layer and said second conductive layer using the same mask to form a plurality of floating gates by said first conductive layer and to form a plurality of control gates by said second conductive layer; wherein the step of selectively etching said first conductive layer includes a first etching step of forming cell slits for separating said plurality of floating gates from each other and a second etching step of forming removed regions each of which includes only one end of each of said plurality of control gates, and the first and second etching steps are performed using etching methods different from each other.
Claim 6
Dependent Claim
199 words
A manufacturing method of a semiconductor memory device, comprising the steps of: selectively forming a field oxide film and a first gate oxide film on a semiconductor substrate; depositing a first conductive layer on an entire surface of the field oxide film and the first gate oxide film, selectively etching said first conductive layer located in region other than an element region; forming a second gate oxide film on the first conductive layer; depositing a second conductive layer on an entire surface of the first and second gate oxide film; and etching said first conductive layer and said second conductive layer using the same mask to form a plurality of floating gates by said first conductive layer and to form a plurality of control gates by said second conductive layer; wherein the step of selectively etching said first conductive layer includes a first etching step of forming cell slits for separating said plurality of floating gates from each other and a second etching step of forming removed regions each of which includes only one end of each of said plurality of control gates, and the first and second etching steps are performed using etching methods different from each other.
Claim 7
Dependent Claim
31 words
A manufacturing method according to claim 4, wherein the first etching step is performed by an anisotropic etching method, and the second etching step is performed by an isotropic etching method.
Claim 8
Dependent Claim
34 words
A manufacturing method according to claim 4, wherein each of said removed regions each of which includes one end of each of said control gates includes a part or all of a contact region.
Claim 9
Dependent Claim
186 words
A manufacturing method of a semiconductor memory device, comprising the steps of: selectively forming a field oxide film and a first gate oxide film on a semiconductor substrate; depositing a first conductive layer on an entire surface of the field oxide film and the first gate oxide film; selectively etching said first conductive layer located in a region other than an element region; forming a second gate oxide film on the first conductive layer; depositing a second conductive layer on an entire surface of the first and second gate oxide films; and etching said first conductive layer and said second conductive layer using the same mask to form a plurality of floating gates by said first conductive layer and to form a plurality of control gates by said second conductive layer; wherein the step of selectively etching said first conductive layer includes an anisotropic first etching step of forming cell slits for separating said plurality of floating gates from each other and an isotropic second etching step of forming removed regions each of which includes only one end of each of said plurality of control gates.
Claim 10
Dependent Claim
186 words
A manufacturing method of a semiconductor memory device, comprising the steps of: selectively forming a field oxide film and a first gate oxide film on a semiconductor substrate; depositing a first conductive layer on an entire surface of the field oxide film and the first gate oxide film; selectively etching said first conductive layer located in a region other than an element region; forming a second gate oxide film on the first conductive layer; depositing a second conductive layer on an entire surface of the first and second gate oxide films; and etching said first conductive layer and said second conductive layer using the same mask to form a plurality of floating gates by said first conductive layer and to form a plurality of control gates by said second conductive layer; wherein the step of selectively etching said first conductive layer includes an anisotropic first etching step of forming cell slits for separating said plurality of floating gates from each other and an isotropic second etching step of forming removed regions each of which includes only one end of each of said plurality of control gates.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
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