Patent US5221403A successfully refreshed from Google Patents.
US5221403A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Support table for plate-like body and processing apparatus using the table
Assignee: Toshiba Corp
•
Filing: 1991-07-18
•
Granted: 1993-06-22
•
Expires: 2011-07-18
Abstract
Abstract A wafer support table is provided in a vacuum chamber of a magnetron plasma etching apparatus. This support table includes a first member having a mechanism for adjusting the temperature of a wafer, a second member having an electrostatic chuck for supporting the wafer on its upper surface, and a gas supply mechanism for supplying a gas between the first and second members.
Inventors
- 👤 Toshihisa Nozawa
- 👤 Junichi Arami
- 👤 Isahiro Hasegawa
- 👤 Haruo Okano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:15
CPC Classifications
H; H10; H10P; H10P50/00; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; C; C23; C23C; C23C14/00; C23C14/22; C23C14/50; C23C14/54; C23C14/541; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/50; C23C16/505; C23C16/509; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H01J37/34; H01J37/3402; H01J37/3405; H01J37/3408; H01J37/3411; H01J37/3435; H10P72/70; H10P72/78; H01J2237/00; H01J2237/20; H01J2237/2001; H01J2237/2007; H01J2237/32; H01J2237/33; H01J2237/334
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
97 words
A processing apparatus for performing predetermined processing for an object to be processed in a vacuum atmosphere, comprising: a vacuum chamber held at a predetermined vacuum degree; a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature of said object by means of a temperature adjusting medium contained therein, and a second member, for supporting said object, detachably provided on said first member; gas supply means for supplying a heat-conduction gas between said first and second members; and processing means for performing arbitrary processing for said object.
Claim 2
Dependent Claim
97 words
A processing apparatus for performing predetermined processing for an object to be processed in a vacuum atmosphere, comprising: a vacuum chamber held at a predetermined vacuum degree; a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature of said object by means of a temperature adjusting medium contained therein, and a second member, for supporting said object, detachably provided on said first member; gas supply means for supplying a heat-conduction gas between said first and second members; and processing means for performing arbitrary processing for said object.
Claim 3
Dependent Claim
22 words
An apparatus according to claim 1, wherein said processing means includes plasma generating means and performs predetermined processing by a generated plasma.
Claim 4
Dependent Claim
21 words
An apparatus according to claim 1, wherein said second member includes an electrostatic chuck for holding said object by coulomb force.
Claim 5
Dependent Claim
24 words
An apparatus according to claim 3, further comprising gas supply means for supplying a heat conduction gas between said electrostatic chuck and said object.
Claim 6
Dependent Claim
111 words
A plasma etching apparatus for dry-etching a semiconductor wafer, comprising: a vacuum chamber held at a predetermined vacuum degree; a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature of said wafer by means of a temperature adjusting medium contained therein, and a second member, for supporting said wafer, detachably provided on said first member; gas supply means for supplying a heat-conduction gas between said first and second members; plasma generating means for generating a plasma for an etching gas around said wafer; and magnetic field applying means for applying a magnetic field to a region where the plasma is generated.
Claim 7
Dependent Claim
111 words
A plasma etching apparatus for dry-etching a semiconductor wafer, comprising: a vacuum chamber held at a predetermined vacuum degree; a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature of said wafer by means of a temperature adjusting medium contained therein, and a second member, for supporting said wafer, detachably provided on said first member; gas supply means for supplying a heat-conduction gas between said first and second members; plasma generating means for generating a plasma for an etching gas around said wafer; and magnetic field applying means for applying a magnetic field to a region where the plasma is generated.
Claim 8
Dependent Claim
81 words
A support table apparatus for supporting an object to be processed provided in a processing apparatus for processing said object in a vacuum atmosphere, comprising: a support table including a first member having a mechanism for adjusting a temperature of said object by means of a temperature adjusting medium contained therein and, a second member, for supporting said object, detachably provided on said first member; and gas supply means for supplying a heat conduction gas between said first and second members.
Claim 9
Dependent Claim
81 words
A support table apparatus for supporting an object to be processed provided in a processing apparatus for processing said object in a vacuum atmosphere, comprising: a support table including a first member having a mechanism for adjusting a temperature of said object by means of a temperature adjusting medium contained therein and, a second member, for supporting said object, detachably provided on said first member; and gas supply means for supplying a heat conduction gas between said first and second members.
Claim 10
Dependent Claim
22 words
A table according to claim 6, wherein said second member includes an electrostatic chuck for holding said body by a Coulomb force.
Claim 11
Dependent Claim
24 words
A table according to claim 6, wherein said first member is fixed to said processing apparatus, and said second member can be removed therefrom.
Claim 12
Dependent Claim
28 words
A table according to claim 6, wherein said gas supply means includes a gas inlet passage for supplying the heat conduction gas between said first and second members.
Claim 13
Dependent Claim
28 words
A table according to claim 9, wherein said gas supply means has a gas pressure control mechanism for controlling a gas pressure between said first and second members.
Claim 14
Dependent Claim
29 words
A table according to claim 6, wherein the heat conduction gas is one member selected from the group consisting of He, O 2 , Ar, and N 2 .
Claim 15
Dependent Claim
24 words
A table according to claim 6, wherein said mechanism for adjusting a temperature includes a temperature adjusting liquid passage formed in said first member.
Claim 16
Dependent Claim
23 words
A table according to claim 6, wherein said mechanism for adjusting a temperature includes a mechanism for cooling said object to be processed.
Claim 17
Dependent Claim
23 words
A table according to claim 6, wherein said mechanism for adjusting a temperature includes a mechanism for heating said object to be processed.
Claim 18
Dependent Claim
24 words
A table according to claim 7, further comprising gas supply means for supplying a heat conduction gas between said electrostatic check and said body.
Claim 19
Dependent Claim
116 words
A plasma etching apparatus for dry-etching a semiconductor wafer, comprising: a vacuum chamber held at a predetermined vacuum degree; a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature by means of a temperature adjusting medium contained therein, and a second member detachably provided on said first member having an electrostatic chuck thereon for holding said object by coulomb force; first gas supply means for supplying a heat-conduction gas between said first and second members; second gas supply means for supplying a heat-conduction gas between said electrostatic chuck and said wafer; and plasma generating means for generating a plasma of an etching gas around said wafer.
Claim 20
Dependent Claim
116 words
A plasma etching apparatus for dry-etching a semiconductor wafer, comprising: a vacuum chamber held at a predetermined vacuum degree; a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature by means of a temperature adjusting medium contained therein, and a second member detachably provided on said first member having an electrostatic chuck thereon for holding said object by coulomb force; first gas supply means for supplying a heat-conduction gas between said first and second members; second gas supply means for supplying a heat-conduction gas between said electrostatic chuck and said wafer; and plasma generating means for generating a plasma of an etching gas around said wafer.
Claim 21
Dependent Claim
26 words
A support table according to claim 6, further comprising an O-ring for preventing a leakage of the heat-conduction gas, provided between said first and second members.
Claim 22
Dependent Claim
19 words
A support table according to claim 6, further comprising bolts for fastening said second member to said first member.
Claim 23
Dependent Claim
27 words
A plasma etching apparatus according to claim 5, further comprising magnetic field applying means for applying a magnetic field to a region where the plasma is generated.
Claim 24
Dependent Claim
27 words
A plasma etching apparatus according to claim 16, further comprising magnetic field applying means for applying a magnetic field to a region where the plasma is generated.
References Cited (Backward Citations)
JPS6179769A
Cited
JPS6356920A
Cited
JPS63131521A
Cited
JPS63131520A
Cited
US4956043A
Cited
US4878995A
Cited
JPH02625A
Cited
JPH01177368A
Cited
JPH01251735A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-21 | 1996-12-21 | 1997-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-21 | 2000-12-21 | 2001-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-21 | 2004-12-21 | 2005-06-22 | $7700.00 | Window Closed / Lapsed |