Patent US5247191A successfully refreshed from Google Patents.
US5247191A
Expired / Lapsed
US
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Semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-08-01
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Granted: 1993-09-21
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Expires: 2011-08-01
Abstract
Abstract A semiconductor device. A depression is formed in an insulating portion of a substrate and an electric lead is formed in the depression so that at least a portion of the electric lead is buried in the substrate. A semiconductor device is formed on the substrate and connected to the electric lead. The electric lead may be an extension of a source electrode, a drain electrode, or a gate electrode of the semiconductor device. Also, a gate electrode, a source electrode, or a drain electrode may be buried in a substrate.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:27
CPC Classifications
H; H10; H10D; H10D86/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10W; H10W20/00; H10W20/01; H10W20/021; G02F1/13624; G02F1/136245
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
40 words
A semiconductor device comprising: a substrate having a flat insulating upper surface; and an electric lead formed of a film of a conductive material, at least a portion of said film being buried in the insulating portion of said substrate.
Claim 2
Dependent Claim
40 words
A semiconductor device comprising: a substrate having a flat insulating upper surface; and an electric lead formed of a film of a conductive material, at least a portion of said film being buried in the insulating portion of said substrate.
Claim 3
Dependent Claim
21 words
The semiconductor device of claim 1 wherein the upper surface of said electric lead is substantially flush with said flat surface.
Claim 4
Dependent Claim
20 words
The semiconductor device of claim 1 wherein said electric lead is connected to a semiconductor device provided on said substrate.
Claim 5
Dependent Claim
68 words
A semiconductor device comprising: an insulating substrate having a depression in a flat surface thereof; a source electrode provided in said depression; a semiconductor layer provided on said insulating substrate and said source electrode; source and drain regions provided in said semiconductor layer; a gate electrode provided on said semiconductor layer with a gate insulating film therebetween; and a channel region located between said source and drain regions.
Claim 6
Dependent Claim
68 words
A semiconductor device comprising: an insulating substrate having a depression in a flat surface thereof; a source electrode provided in said depression; a semiconductor layer provided on said insulating substrate and said source electrode; source and drain regions provided in said semiconductor layer; a gate electrode provided on said semiconductor layer with a gate insulating film therebetween; and a channel region located between said source and drain regions.
Claim 7
Dependent Claim
21 words
The semiconductor device of claim 4 further comprising an electrode provided on said insulating substrate and connected to said drain region.
Claim 8
Dependent Claim
16 words
The semiconductor device of claim 4 wherein said source electrode is connected to said source region.
Claim 9
Dependent Claim
24 words
The semiconductor device of claim 4 wherein said insulating substrate is used as one of a pair of substrates constituting a liquid crystal device.
Claim 10
Dependent Claim
60 words
A semiconductor device comprising: an insulating substrate having a depression in a flat surface thereof; a gate electrode provided in said depression; a semiconductor layer provided on said insulating substrate and said gate electrode with a gate insulating film therebetween; source and drain regions provided in said semiconductor layer; and a channel region located between said source and drain regions.
Claim 11
Dependent Claim
60 words
A semiconductor device comprising: an insulating substrate having a depression in a flat surface thereof; a gate electrode provided in said depression; a semiconductor layer provided on said insulating substrate and said gate electrode with a gate insulating film therebetween; source and drain regions provided in said semiconductor layer; and a channel region located between said source and drain regions.
Claim 12
Dependent Claim
16 words
The semiconductor device of claim 8 further comprising a source electrode connected to said source region.
Claim 13
Dependent Claim
21 words
The semiconductor device of claim 8 further comprising an electrode provided on said insulating substrate and connected to said drain region.
Claim 14
Dependent Claim
24 words
The semiconductor device of claim 8 wherein said insulating substrate is used as one of a pair of substrates constituting a liquid crystal device.
Claim 15
Dependent Claim
44 words
A semiconductor device provided on an insulating substrate having a depression in a flat surface thereof, said semiconductor device comprising: complimentary transistors provided on said insulating substrate; and an electric lead provided in said depression and connected to at least one of said transistors.
Claim 16
Dependent Claim
44 words
A semiconductor device provided on an insulating substrate having a depression in a flat surface thereof, said semiconductor device comprising: complimentary transistors provided on said insulating substrate; and an electric lead provided in said depression and connected to at least one of said transistors.
Claim 17
Dependent Claim
22 words
The semiconductor device of claim 12 wherein said complimentary transistors comprise a p-channel field effect transistor and an n-channel field effect transistor.
Claim 18
Dependent Claim
27 words
The semiconductor device of claim 13 wherein said electric lead comprises a shortened gate electrode connected to said one of said p-channel and n-channel field effect transistors.
Claim 19
Dependent Claim
52 words
The semiconductor device of claim 14 wherein said p-channel and n-channel field effect transistors comprise semiconductor layers provided on said insulating substrate and said shortened gate electrode with a gate insulating film therebetween, source and drain regions provided in said semiconductor layers, and channel regions located between said source and drain regions.
Claim 20
Dependent Claim
68 words
A semiconductor device comprising: an insulating substrate having a depression in a flat surface thereof; a drain electrode provided in said depression; a semiconductor layer provided on said insulating substrate and said drain electrode; source and drain regions provided in said semiconductor layer; a gate electrode provided on said semiconductor layer with a gate insulating film therebetween; and a channel region located between said source and drain regions.
Claim 21
Dependent Claim
68 words
A semiconductor device comprising: an insulating substrate having a depression in a flat surface thereof; a drain electrode provided in said depression; a semiconductor layer provided on said insulating substrate and said drain electrode; source and drain regions provided in said semiconductor layer; a gate electrode provided on said semiconductor layer with a gate insulating film therebetween; and a channel region located between said source and drain regions.
Claim 22
Dependent Claim
21 words
The semiconductor device of claim 16 further comprising an electrode provided on said insulating substrate and connected to said source region.
Claim 23
Dependent Claim
16 words
The semiconductor device of claim 16 wherein said drain electrode is connected to said drain region.
Claim 24
Dependent Claim
24 words
The semiconductor device of claim 16 wherein said insulating substrate is used as one of a pair of substrates constituting a liquid crystal device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-20 | 1997-03-22 | 1997-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-20 | 2001-03-22 | 2001-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-20 | 2005-03-22 | 2005-09-21 | $7700.00 | Window Closed / Lapsed |