US5258643A
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US
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Electrically programmable link structures and methods of making same
Assignee: Massachusetts Institute of Technology
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Filing: 1991-07-25
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Granted: 1993-11-02
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Expires: 2011-07-25
Abstract
Abstract Methods and systems are disclosed for fabricating electrically programmable link structures by fabricating a first conductor, which comprises a refractory conductive material, then fabricating an insulative link material over the refractory conductive material and, subsequently, depositing an upper conductive material over the link material. In use, an electrical path can be formed between the first and second conductive elements by applying a voltage between such elements across at least one selected region of the insulator, such that the insulative link material is transformed in the region and rendered conductive to form an electrical signal path. The link material is preferably a silicon oxide insulator and The U.S. Government has rights in this invention pursuant to Contract No. F19628-90-C-0002 awarded by the Department of the Air Force.
Inventors
- 👤 Simon S. Cohen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
81 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over a portion of the lower conductive element, the transformable insulator material comprising a sandwiched structure comprising a silicon oxide layer formed between silicon nitride layer; and an upper conductive element disposed over the insulator material, such that by applying a voltage between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive.
Claim 2
Dependent Claim
81 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over a portion of the lower conductive element, the transformable insulator material comprising a sandwiched structure comprising a silicon oxide layer formed between silicon nitride layer; and an upper conductive element disposed over the insulator material, such that by applying a voltage between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive.
Claim 3
Dependent Claim
26 words
The structure of claim 1 wherein the lower conductive element comprises a refractory material having a thermal coefficient of expansion less than about 10.0×10 -6 /°C.
Claim 4
Dependent Claim
28 words
The structure of claim 1 wherein the lower conductive element comprises a material chosen from the group consisting of refractory metals, refractory metal alloys and refractory metal silicides.
Claim 5
Dependent Claim
24 words
The structure of claim 1 wherein the lower conductive element comprises a refractory material selected from the group consisting of molybdenum, titanium and tungsten.
Claim 6
Dependent Claim
11 words
The structure of claim 4 wherein the refractory material comprises molybdenum.
Claim 7
Dependent Claim
26 words
The structure of claim 1 wherein the lower conductive element comprises an overcoating of a thin layer of a non-refractory conductive material over refractory conductive material.
Claim 8
Dependent Claim
12 words
The structure of claim 6 wherein the non-refractory conductive overcoating is aluminum.
Claim 9
Dependent Claim
12 words
The structure of claim 6 wherein the non-refractory conductive overcoating is silicon.
Claim 10
Dependent Claim
20 words
The structure of claim 1 wherein the thickness of the oxide layer ranges from about 5 to about 30 nanometers.
Claim 11
Dependent Claim
21 words
The structure of claim 1 wherein the thickness of each silicon nitride layer ranges from about 5 to about 30 nanometers.
Claim 12
Dependent Claim
12 words
The structure of claim 1 wherein the silicon nitride layer is silicon-rich.
Claim 13
Dependent Claim
27 words
The structure of claim 11 where in the nitride is a composition according to the formula SiN y where y ranges from about 0.3 to about 1.3.
Claim 14
Dependent Claim
12 words
The structure of claim 1 wherein the upper conductive element comprises aluminum.
Claim 15
Dependent Claim
26 words
The structure of claim 1 wherein the upper conductive element comprises a refractory material having a thermal coefficient of expansion less than about 10.0×10 -6 /°C.
Claim 16
Dependent Claim
28 words
The structure of claim 1 wherein the upper conductive element comprises a material chosen from the group consisting of refractory metals, refractory metal alloys and refractory metal silicides.
Claim 17
Dependent Claim
24 words
The structure of claim 1 wherein the upper conductive element comprises a refractory material selected from the group consisting of molybdenum, titanium and tungsten.
Claim 18
Dependent Claim
11 words
The structure of claim 16 wherein the refractory material comprises molybdenum.
Claim 19
Dependent Claim
29 words
The structure of claim 1 wherein the upper conductive element comprises an undercoating of a thin layer of a non-refractory conductive material under a layer of refractory conductive material.
Claim 20
Dependent Claim
12 words
The structure of claim 18 wherein the non-refractory conductive undercoating is aluminum.
Claim 21
Dependent Claim
12 words
The structure of claim 18 wherein the non-refractory conductive undercoating is silicon.
Claim 22
Dependent Claim
20 words
The structure of claim 1 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.
Claim 23
Dependent Claim
12 words
The structure of claim 21 wherein the conductive elements comprise nonrefractory material.
Claim 24
Dependent Claim
11 words
The structure of claim 21 wherein the conductive elements comprise aluminum.
Claim 25
Dependent Claim
90 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a sandwiched structure of a silicon oxide layer interposed between silicon nitride layers, the silicon oxide layer having the thickness greater than about 5 nm; and an upper conductive element disposed over the insulator material, such that by applying over the between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive.
Claim 26
Dependent Claim
90 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a sandwiched structure of a silicon oxide layer interposed between silicon nitride layers, the silicon oxide layer having the thickness greater than about 5 nm; and an upper conductive element disposed over the insulator material, such that by applying over the between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive.
Claim 27
Dependent Claim
27 words
The structure of claim 24, wherein the silicon nitride and the silicon oxide layers each have a thickness ranging from about 5 nm to about 30 nm.
Claim 28
Dependent Claim
20 words
The structure of claim 24 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.
Claim 29
Dependent Claim
12 words
The structure of claim 24 wherein the conductive elements comprise nonrefractory material.
Claim 30
Dependent Claim
11 words
The structure of claim 24 wherein the conductive elements comprise aluminum.
Claim 31
Dependent Claim
103 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a sandwiched structure comprising a silicon oxide layer and at least one silicon nitride layer formed by a low temperature chemical vapor deposition; and an upper conductive element disposed over the insulator material, such that by applying a voltage between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive, wherein the transformable insulator material comprises the silicon oxide layer interposed between silicon nitride layers.
Claim 32
Dependent Claim
103 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a sandwiched structure comprising a silicon oxide layer and at least one silicon nitride layer formed by a low temperature chemical vapor deposition; and an upper conductive element disposed over the insulator material, such that by applying a voltage between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive, wherein the transformable insulator material comprises the silicon oxide layer interposed between silicon nitride layers.
Claim 33
Dependent Claim
20 words
A structure of claim 29 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.
Claim 34
Dependent Claim
12 words
A structure of claim 29 wherein the conductive elements comprise nonrefractory material.
Claim 35
Dependent Claim
11 words
A structure of claim 29 wherein the conductive elements comprise aluminum.
Claim 36
Dependent Claim
93 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a silicon oxide layer having a thickness greater than 5 nm and at least one barrier layer; and an upper conductive element disposed over the insulator material, such that by applying a voltage between the upper and lower conductive elements across at least one selected region of the insulator material, the insulator material is rendered conductive, wherein the silicon oxide layer is interposed between silicon nitride barrier layers.
Claim 37
Dependent Claim
93 words
An electrically programmable link structure comprising: a lower conductive element; a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a silicon oxide layer having a thickness greater than 5 nm and at least one barrier layer; and an upper conductive element disposed over the insulator material, such that by applying a voltage between the upper and lower conductive elements across at least one selected region of the insulator material, the insulator material is rendered conductive, wherein the silicon oxide layer is interposed between silicon nitride barrier layers.
Claim 38
Dependent Claim
20 words
A structure of claim 33 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.
Claim 39
Dependent Claim
12 words
A structure of claim 33 wherein the conductive elements comprise nonrefractory material.
Claim 40
Dependent Claim
110 words
An electrically programmable link structure comprising: a lower conductive element comprising aluminum; a transformable insulator material disposed over a portion of the lower conductive element, the transformable insulator material comprising a sandwich structure comprising a silicon oxide layer formed between silicon nitride layers through a low temperature deposition process, the oxide layer being of low quality and of a thickness greater than 5 nm; and an upper conductive element comprising aluminum disposed over the insulator material, such that by applying a voltage of less than 13 volts between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material is rendered conductive.
Claim 41
Dependent Claim
110 words
An electrically programmable link structure comprising: a lower conductive element comprising aluminum; a transformable insulator material disposed over a portion of the lower conductive element, the transformable insulator material comprising a sandwich structure comprising a silicon oxide layer formed between silicon nitride layers through a low temperature deposition process, the oxide layer being of low quality and of a thickness greater than 5 nm; and an upper conductive element comprising aluminum disposed over the insulator material, such that by applying a voltage of less than 13 volts between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material is rendered conductive.
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