Patent US5284544A successfully refreshed from Google Patents.
US5284544A
Expired / Lapsed
US
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Apparatus for and method of surface treatment for microelectronic devices
Assignee: Hitachi Ltd
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Filing: 1990-10-17
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Granted: 1994-02-08
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Expires: 2010-10-17
Abstract
Abstract An apparatus for surface treatment according to the present invention used for carrying out dry etching, thin film deposition and so forth is provided with a neutral beam etching apparatus in order to improve etching rate. In an embodiment, microwave wave-guides forming a duplex tube, a discharge tube, a pair of solenoids arranged coaxially, a multiaperture electrode for extracting an ion beam, gas supply pipes, a set of charged particle retarding grids, a device for controlling temperature of a specimen and a vacuum unit are provided.
Inventors
- 👤 Tatsumi Mizutani
- 👤 Takashi Yunogami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:26
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357
Claims Analysis
Total Claims: 58
Claim 1
Independent Claim
56 words
An apparatus for surface treatment, comprising: wave-guides having a duplex structure portion; a first plasma generating region and ion beam generating means for generating an ion beam near one end of an internal wave-guide of said wave-guides; and a second plasma generating region for forming radicals near one end of an external wave-guide of said wave-guides.
Claim 2
Independent Claim
56 words
An apparatus for surface treatment, comprising: wave-guides having a duplex structure portion; a first plasma generating region and ion beam generating means for generating an ion beam near one end of an internal wave-guide of said wave-guides; and a second plasma generating region for forming radicals near one end of an external wave-guide of said wave-guides.
Claim 3
Dependent Claim
23 words
An apparatus for surface treatment according to claim 1, further comprising means for controlling the temperature of a specimen at a predetermined value.
Claim 4
Independent Claim
153 words
An apparatus for treating a surface of an object, said apparatus comprising: first means for generating an ion beam within a vessel containing an ion beam source gas at a pressure below atmospheric pressure; second means for introducing a reactive gas into said vessel and converting the reactive gas into a plasma to produce radicals; said first means causing the ion beam to pass through a gas atmosphere containing the ion beam source gas and the reactive gas within said vessel to neutralize part of the charged particles in the ion beam and convert the ion beam into a mixed beam containing the ion beam and a neutral beam; and third means for radiating substantially only the neutral beam onto an object, with charged particles in the mixed beam being substantially prevented from impinging on the object, and for supplying, among the radicals, substantially only neutral radicals to the surface of the object.
Claim 5
Independent Claim
153 words
An apparatus for treating a surface of an object, said apparatus comprising: first means for generating an ion beam within a vessel containing an ion beam source gas at a pressure below atmospheric pressure; second means for introducing a reactive gas into said vessel and converting the reactive gas into a plasma to produce radicals; said first means causing the ion beam to pass through a gas atmosphere containing the ion beam source gas and the reactive gas within said vessel to neutralize part of the charged particles in the ion beam and convert the ion beam into a mixed beam containing the ion beam and a neutral beam; and third means for radiating substantially only the neutral beam onto an object, with charged particles in the mixed beam being substantially prevented from impinging on the object, and for supplying, among the radicals, substantially only neutral radicals to the surface of the object.
Claim 6
Dependent Claim
21 words
An apparatus according to claim 3, wherein said first means includes plasma generating means and an ion beam extracting electrode unit.
Claim 7
Dependent Claim
20 words
An apparatus according to claim 3, wherein said vessel includes means for supplying microwave electric power to the vessel interior.
Claim 8
Dependent Claim
21 words
An apparatus according to claim 3, wherein said vessel includes means for supplying high frequency electric power to the vessel interior.
Claim 9
Dependent Claim
92 words
An apparatus according to claim 3, wherein said third means includes first, second, third and fourth plate-like grids arranged substantially in parallel with each other, with a predetermined spacing between adjacent ones of said grids, and with said first and fourth grids respectively being nearest to and farthest from said second means; means for applying ground potential to said first grid; means for applying a negative voltage to said second grid; means for applying a positive voltage to said third grid; and means for applying the ground potential to said fourth grid.
Claim 10
Dependent Claim
45 words
An apparatus according to claim 3, wherein said third means includes first and second comb-like deflecting units arrange din a nested structure; means for supplying a positive voltage to said first deflecting unit; and means for supplying a negative voltage to said second deflecting unit.
Claim 11
Dependent Claim
24 words
An apparatus according to claim 3, wherein said second means is spaced from the surface of the object by not more than 10 cm.
Claim 12
Dependent Claim
49 words
An apparatus according to claim 3, further comprising means for holding the object so that the incident angle of the neutral beam onto the surface of the object is not parallel with the normal to the surface of said object; and means for precession rotating of said holding means.
Claim 13
Dependent Claim
13 words
An apparatus according to claim 3, wherein the object is a semiconductor device.
Claim 14
Dependent Claim
14 words
An apparatus according to claim 3, wherein said second means includes plasma generating means.
Claim 15
Dependent Claim
17 words
An apparatus according to claim 12, wherein said plasma generating means includes a plurality of plasma generators.
Claim 16
Dependent Claim
23 words
An apparatus according to claim 12, wherein said plasma generating means is annular plasma generating means on a wall surface of said vessel.
Claim 17
Dependent Claim
64 words
An apparatus according to claim 3, wherein said vessel includes waveguide means having a duplex structure portion, and wherein at least a portion of said first means is arranged near one end of an internal waveguide of said duplex structure portion and at least a portion of said second means is arranged near one end of an external waveguide of said duplex structure portion.
Claim 18
Dependent Claim
21 words
An apparatus according to claim 15, wherein said first means includes plasma generating means and an ion beam extracting electrode unit.
Claim 19
Dependent Claim
14 words
An apparatus according to claim 15, wherein said second means includes plasma generating means.
Claim 20
Dependent Claim
52 words
An apparatus according to claim 3, wherein said third means includes a first grid; a second grid further from said second means than said first grid is from said second means; means for supplying a negative voltage to said first grid; and means for supplying a positive voltage to said second grid.
Claim 21
Dependent Claim
17 words
An apparatus according to claim 18, wherein said first and second grids are made of carbon fibers.
Claim 22
Dependent Claim
18 words
An apparatus according to claim 18, wherein said first and second grids are substantially parallel with each other.
Claim 23
Dependent Claim
23 words
An apparatus according to claim 20, wherein said first and second grids are formed in a double layer structure of carbon and silicon.
Claim 24
Dependent Claim
24 words
An apparatus according to claim 20, wherein said first and second grids are formed in a double layer structure of silicon carbide and silicon.
Claim 25
Independent Claim
143 words
An apparatus for treating a surface of an object, said apparatus comprising an enclosed vessel having an interior pressure below atmospheric pressure, and a discharge tube assembly within said vessel, said discharge tube assembly including means defining a first discharge space and a second discharge space, said defining means including a wall surface and means for supplying high frequency electric power or microwave electric power to the first discharge space and the second discharge space; means for independently controlling the amount of high frequency electric power or microwave electric power supplied to said first discharge space and to said second discharge space, said first discharge space being arranged to extract an ion beam from which a neutral beam to be radiated onto the object is produced, and said second discharge space being arranged to produce radicals for treating the surface of the object.
Claim 26
Independent Claim
143 words
An apparatus for treating a surface of an object, said apparatus comprising an enclosed vessel having an interior pressure below atmospheric pressure, and a discharge tube assembly within said vessel, said discharge tube assembly including means defining a first discharge space and a second discharge space, said defining means including a wall surface and means for supplying high frequency electric power or microwave electric power to the first discharge space and the second discharge space; means for independently controlling the amount of high frequency electric power or microwave electric power supplied to said first discharge space and to said second discharge space, said first discharge space being arranged to extract an ion beam from which a neutral beam to be radiated onto the object is produced, and said second discharge space being arranged to produce radicals for treating the surface of the object.
Claim 27
Dependent Claim
93 words
An apparatus according to claim 23, wherein said second means includes first, second, third and fourth plate-like grids arranged substantially in parallel with each other, with a predetermined spacing between adjacent ones of said grids, with said first and fourth grids, respectively, being nearest to and farthest from said second plasma discharge space; means for applying ground potential to said first grid; means for applying a negative voltage to said second grid; means for applying a positive voltage to said third grid; and means for applying the ground potential to said fourth grid.
Claim 28
Dependent Claim
45 words
An apparatus according to claim 23, wherein said second means includes first and second comb-like deflecting units arranged in a nested structure; means for supplying a positive voltage to said first deflecting unit; and means for supplying a negative voltage to said second deflecting unit.
Claim 29
Dependent Claim
25 words
An apparatus according to claim 23, wherein said second discharge space is spaced from the surface of the object by not more than 10 cm.
Claim 30
Dependent Claim
48 words
An apparatus according to claim 23, further comprising means for holding the object so that the incident angle of the neutral beam onto the surface of the object is not parallel with a normal to the surface of the object; and means for precession rotating said holding means.
Claim 31
Dependent Claim
13 words
An apparatus according to claim 23, wherein the object is a semiconductor device.
Claim 32
Dependent Claim
91 words
An apparatus according to claim 23, further comprising: first means for passing the ion beam through a gas within said vessel to neutralize part of the charged particles of the ion beam and convert the ion beam into a mixed beam of an ion beam and a neutral beam; and second means for radiating the neutral beam onto the object, with charged particles in the mixed beam being substantially prevented from impinging on the object, and for supplying, among the radicals, substantially only neutral radicals to the surface of the object.
Claim 33
Dependent Claim
18 words
An apparatus according to claim 29, wherein said first and second grids are substantially parallel with each other.
Claim 34
Dependent Claim
53 words
An apparatus according to claim 29, wherein said second means includes a first grid; a second grid further from said second discharge space than said first grid is from said discharge space; means for supplying a negative voltage to said first grid; and means for supplying a positive voltage to said second grid.
Claim 35
Dependent Claim
23 words
An apparatus according to claim 31, wherein said first and second grids are formed in a double layer structure of carbon and silicon.
Claim 36
Dependent Claim
24 words
An apparatus according to claim 31, wherein said first and second grids are formed in a double layer structure of silicon carbide and silicon.
Claim 37
Dependent Claim
17 words
An apparatus according to claim 31, wherein said first and second grids are made of carbon fibers.
Claim 38
Independent Claim
177 words
An apparatus for treating a surface of an object in a vessel at a pressure below atmospheric pressure, said apparatus comprising: waveguide means within the vessel and having a duplex structure portion; first plasma generating means for producing an ion beam; ion beam extracting means; means arranging said first plasma generating means and said ion beam extracting means near one end of an internal waveguide of said duplex structure portion; second plasma generating means for producing radicals; means arranging said second plasma generating means near one end of an external waveguide of said duplex structure portion; means for passing the ion beam through a gas within the vessel to neutralize part of the charged particles of the ion beam and convert the ion beam to a mixed beam of an ion beam and a neutral beam; and means for radiating the neutral beam onto an object, with charged particles in the mixed beam being substantially prevented from impinging on the object, and for supplying, among the radicals, substantially only neutral radicals to the surface of the object.
Claim 39
Independent Claim
177 words
An apparatus for treating a surface of an object in a vessel at a pressure below atmospheric pressure, said apparatus comprising: waveguide means within the vessel and having a duplex structure portion; first plasma generating means for producing an ion beam; ion beam extracting means; means arranging said first plasma generating means and said ion beam extracting means near one end of an internal waveguide of said duplex structure portion; second plasma generating means for producing radicals; means arranging said second plasma generating means near one end of an external waveguide of said duplex structure portion; means for passing the ion beam through a gas within the vessel to neutralize part of the charged particles of the ion beam and convert the ion beam to a mixed beam of an ion beam and a neutral beam; and means for radiating the neutral beam onto an object, with charged particles in the mixed beam being substantially prevented from impinging on the object, and for supplying, among the radicals, substantially only neutral radicals to the surface of the object.
Claim 40
Dependent Claim
94 words
An apparatus according to claim 35, wherein said second means includes first, second, third and fourth plate-like grids arranged substantially in parallel with each other, with a predetermined spacing between adjacent ones of said grids, and with said first and fourth grids, respectively, being nearest to and farthest from said second plasma generating means; means for applying ground potential to said first grid; means for applying a negative voltage to said second grid; means for applying a positive voltage to said third grid; and means for applying the ground potential to said fourth grid.
Claim 41
Dependent Claim
45 words
An apparatus according to claim 35, wherein said second means includes first and second comb-like deflecting units arranged in a nested structure; means for supplying a positive voltage to said first deflecting unit; and means for supplying a negative voltage to said second deflecting unit.
Claim 42
Dependent Claim
48 words
An apparatus according to claim 35, further comprising means for holding the object so that the incident angle of the neutral beam onto the surface of the object is not parallel with a normal to the surface of the object; and means for precession rotating said holding means.
Claim 43
Dependent Claim
13 words
An apparatus according to claim 35, wherein the object is a semiconductor device.
Claim 44
Dependent Claim
56 words
An apparatus according to claim 35, wherein said second means includes a first grid; a second grid further from said second plasma generating means than said first grid is from said second plasma generating means; means for supplying a negative voltage to said first grid; and means for supplying a positive voltage to said second grid.
Claim 45
Dependent Claim
18 words
An apparatus according to claim 40, wherein said first and second grids are substantially parallel with each other.
Claim 46
Dependent Claim
23 words
An apparatus according to claim 40, wherein said first and second grids are formed in a double layer structure of carbon and silicon.
Claim 47
Dependent Claim
24 words
An apparatus according to claim 40, wherein said first and second grids are formed in a double layer structure of silicon carbide and silicon.
Claim 48
Dependent Claim
17 words
An apparatus according to claim 40, wherein said first and second grids are made of carbon fibers.
Claim 49
Independent Claim
72 words
A method of surface treatment of a specimen, comprising generating a neutral beam within a vacuum chamber; generating radicals, including neutral radicals by forming particles in said vacuum chamber into plasma within said vacuum chamber; holding a specimen so that the specimen surface is oriented in a direction not normal to the direction of the neutral beam; rotating the specimen; and supplying the neutral beam and neutral radicals to the specimen surface.
Claim 50
Independent Claim
72 words
A method of surface treatment of a specimen, comprising generating a neutral beam within a vacuum chamber; generating radicals, including neutral radicals by forming particles in said vacuum chamber into plasma within said vacuum chamber; holding a specimen so that the specimen surface is oriented in a direction not normal to the direction of the neutral beam; rotating the specimen; and supplying the neutral beam and neutral radicals to the specimen surface.
Claim 51
Dependent Claim
33 words
A method of surface treatment according to claim 45, wherein said neutral beam is generated by operating charge exchange reactions with gas molecules on the ion beam which has been extracted from plasma.
Claim 52
Dependent Claim
24 words
A method of surface treatment according to claim 45, wherein said plasma is generated in a space within 10 cm of the specimen surface.
Claim 53
Independent Claim
24 words
A method of surface treatment according to one of claims 45 to 47, further comprising maintaining the specimen temperature constant during the surface treatment.
Claim 54
Independent Claim
44 words
A method of surface treatment according to one of claims 45 to 47, wherein a plurality of grids are arranged just in front of the specimen, and voltages are applied to the grids to prevent charged particles from being incident on the specimen surface.
Claim 55
Independent Claim
26 words
A method of surface treatment according to one of claims 45 to 47, wherein rare gas atoms are contained in the particles of said neutral beam.
Claim 56
Independent Claim
49 words
A method of surface treatment according to one of claims 45 to 47, wherein neutral radicals supplied to the specimen surface are generated from a gas containing carbon, fluorine and hydrogen as constituents, and a specimen composed of a material having SiO 2 as a principal component is etched.
Claim 57
Dependent Claim
20 words
A method of surface treatment according to claim 48, wherein the specimen temperature is held at -100 C or below.
Claim 58
Independent Claim
26 words
A method of surface treatment according to one of claims 45 to 47, wherein the energy of said neutral beam is at 500 eV or below.
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| 3.5 Years (Year 4) | 1997-02-07 | 1997-08-09 | 1998-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-07 | 2001-08-09 | 2002-02-08 | $3760.00 | Window Closed / Lapsed |
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