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US5375097A
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Segmented bus architecture for improving speed in integrated circuit memories
Assignee: Integrated Silicon Solution Inc
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Filing: 1993-06-29
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Granted: 1994-12-20
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Expires: 2013-06-29
Abstract
Abstract A memory array wherein transfer bus length is reduced and segmented by arranging the column decoder select signals to run across the length of the word line to reduce the node capacitance seen by the corresponding memory cell. This transfer of low capacitance from the transfer bus, i.e., the critical path, to the select line, which is a non-critical path for speed, improves access speed.
Inventors
- 👤 Chitranjan N. Reddy
- 👤 Ajit K. Medhekar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:18
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/06; G11C5/063; G11C5/02; G11C5/025
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
232 words
An integrated circuit memory device having a segmented transfer bus architecture, the memory device comprising a matrix of rows and columns of individual memory cells, each individual memory cell in a selected row of said matrix being connected to a corresponding word line and being responsive to a predefined signal provided on the word line for providing data from said memory cell to a bit line associated with said memory cell, the individual memory cells in said selected row being divided into a plurality of groups of memory cells, each group consisting of x/n adjacent memory cells, where x is the total number of memory cells in said selected row and n is an integer greater than 1, and wherein the bit line of each memory cell in a selected group of adjacent memory cells is connectable to a group transfer bus associated with the selected group via a column select pass gate associated with said memory cell, and wherein the column select pass gate responds to a column decoder select signal by passing data from the bit line to the associated group transfer bus, the memory device further comprising a plurality of column decoders, each column decoder responding to a corresponding column address by providing the column decoder select signal to a column select pass gate of a single selected memory cell in each of the groups of adjacent memory cells.
Claim 2
Dependent Claim
232 words
An integrated circuit memory device having a segmented transfer bus architecture, the memory device comprising a matrix of rows and columns of individual memory cells, each individual memory cell in a selected row of said matrix being connected to a corresponding word line and being responsive to a predefined signal provided on the word line for providing data from said memory cell to a bit line associated with said memory cell, the individual memory cells in said selected row being divided into a plurality of groups of memory cells, each group consisting of x/n adjacent memory cells, where x is the total number of memory cells in said selected row and n is an integer greater than 1, and wherein the bit line of each memory cell in a selected group of adjacent memory cells is connectable to a group transfer bus associated with the selected group via a column select pass gate associated with said memory cell, and wherein the column select pass gate responds to a column decoder select signal by passing data from the bit line to the associated group transfer bus, the memory device further comprising a plurality of column decoders, each column decoder responding to a corresponding column address by providing the column decoder select signal to a column select pass gate of a single selected memory cell in each of the groups of adjacent memory cells.
Claim 3
Dependent Claim
17 words
An integrated circuit memory device as in claim 1 and wherein the memory cells are SRAM cells.
Claim 4
Dependent Claim
17 words
An integrated circuit memory device as in claim 1 and wherein the memory cells are DRAM cells.
Claim 5
Dependent Claim
287 words
An integrated circuit memory device having a segmented transfer bus architecture, the memory device comprising a matrix of rows and columns of individual memory cells, each memory cell in a selected row of said matrix being connected to a corresponding word line, the memory cells in said selected row being divided into a plurality of groups of memory cells, each group consisting of x/n adjacent memory cells, where x is the total number of memory cells in said selected row and n is an integer greater than 1, and wherein each memory cell in said selected row includes first and second complementary data outputs connected, respectively, to first and second bit lines via respective first and second internal pass gates, the first and second internal pass gates being responsive to a predefined signal provided on the word line for passing data from the first and second data outputs, respectively, to the respective first and second bit lines, and wherein the first and second bit lines of each memory cell in a selected group of adjacent memory cells are connectable to a first and second transfer buses associated with the selected group, respectively, via a column select pass gate pair associated with said memory cell, and wherein the column select pass gate pair responds to a column decoder select signal by passing data from the first and second bit lines to the associated first and second transfer buses, respectively, the memory device further comprising a plurality of column decoders, each column decoder being responsive to a corresponding column address for providing the column decoder select signal to a column select pass gate pair of a single selected memory cell in each of the groups of adjacent memory cells.
Claim 6
Dependent Claim
287 words
An integrated circuit memory device having a segmented transfer bus architecture, the memory device comprising a matrix of rows and columns of individual memory cells, each memory cell in a selected row of said matrix being connected to a corresponding word line, the memory cells in said selected row being divided into a plurality of groups of memory cells, each group consisting of x/n adjacent memory cells, where x is the total number of memory cells in said selected row and n is an integer greater than 1, and wherein each memory cell in said selected row includes first and second complementary data outputs connected, respectively, to first and second bit lines via respective first and second internal pass gates, the first and second internal pass gates being responsive to a predefined signal provided on the word line for passing data from the first and second data outputs, respectively, to the respective first and second bit lines, and wherein the first and second bit lines of each memory cell in a selected group of adjacent memory cells are connectable to a first and second transfer buses associated with the selected group, respectively, via a column select pass gate pair associated with said memory cell, and wherein the column select pass gate pair responds to a column decoder select signal by passing data from the first and second bit lines to the associated first and second transfer buses, respectively, the memory device further comprising a plurality of column decoders, each column decoder being responsive to a corresponding column address for providing the column decoder select signal to a column select pass gate pair of a single selected memory cell in each of the groups of adjacent memory cells.
Claim 7
Dependent Claim
17 words
An integrated circuit memory device as in claim 4 and wherein the memory cells are SRAM cells.
References Cited (Backward Citations)
US5161121A
Cited
US5255228A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-19 | 1998-06-20 | 1998-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-19 | 2002-06-20 | 2002-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-19 | 2006-06-20 | 2006-12-20 | $7700.00 | Window Closed / Lapsed |