Patent US5376227A successfully refreshed from Google Patents.
US5376227A
Expired / Lapsed
US
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Multilevel resist process
Assignee: SK Hynix Inc
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Filing: 1993-11-01
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Granted: 1994-12-27
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Expires: 2013-11-01
Abstract
Abstract A method for forming a MLR pattern. The method comprises the steps of: forming a bottom resist film on a semiconductor substrate in which a semiconductor device is formed; forming a inter-layer on the bottom resist film; forming a top resist film on the inter-layer, wherein a first top resist film made of an inorganic material and a second top resist film made of another inorganic material and formed on the first top resist film; exposing the top resist film using a pattern mask; etching the exposed portion of the second top resist film of the top resist film; etching the first top resist film using the remained-unexposed portion of the second top resist file made of the second inorganic material as an etch mask, to form a pattern of the top resist film; etching the inter-layer and the bottom resist film using the pattern of the top resist film as an etch mask, in this order, to form a MLR pattern; and removing the pattern of the top resist film.
Inventors
- 👤 Jun S. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:40
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
168 words
A method for forming a MLR pattern comprising the steps of: forming a bottom resist film on a semiconductor substrate in which a semiconductor device having steps is formed; forming an inter-layer on the bottom resist film; forming a top resist film on the inter-layer, wherein the top resist film comprising a first top resist film made of an inorganic material and a second top resist film made of a another inorganic material and formed on the first resist film; exposing the top resist film using a pattern mask; etching the exposed portion of the second top resist film of the top resist film; etching the first top resist film using the remaining-unexposed portion of the second top resist-film as an etch mask, to form a pattern of the top resist film; etching the inter-layer and the bottom resist film using the pattern of the top resist film as an etch mask, in this order, to form a MLR pattern; and removing the pattern of top resist film.
Claim 2
Independent Claim
168 words
A method for forming a MLR pattern comprising the steps of: forming a bottom resist film on a semiconductor substrate in which a semiconductor device having steps is formed; forming an inter-layer on the bottom resist film; forming a top resist film on the inter-layer, wherein the top resist film comprising a first top resist film made of an inorganic material and a second top resist film made of a another inorganic material and formed on the first resist film; exposing the top resist film using a pattern mask; etching the exposed portion of the second top resist film of the top resist film; etching the first top resist film using the remaining-unexposed portion of the second top resist-film as an etch mask, to form a pattern of the top resist film; etching the inter-layer and the bottom resist film using the pattern of the top resist film as an etch mask, in this order, to form a MLR pattern; and removing the pattern of top resist film.
Claim 3
Dependent Claim
34 words
A method for forming a MLR pattern in accordance with claim 1, wherein the bottom resist film is formed with a thickness larger above 30% than that of the steps of the semiconductor device.
Claim 4
Dependent Claim
24 words
A method for forming a MLR pattern is accordance with claim 2, wherein the bottom resist film is made of an organic resist film.
Claim 5
Dependent Claim
24 words
A method for forming a MLR pattern in accordance with claim 2, wherein the bottom resist film is made of an inorganic resist film.
Claim 6
Dependent Claim
23 words
A method for forming a MLR pattern in accordance with claim 4, the bottom resist film is made of Gex Se 1-x .
Claim 7
Dependent Claim
25 words
A method for forming a MLR pattern in accordance with claim 1, the top resist film is made of Ag 2 Se/Gex Se 1-x .
Claim 8
Dependent Claim
35 words
A method for forming a MLR pattern in accordance with claim 1, the top resist film is made of one of Ag 2 s/As 2 S 3 and As 2 Se 3 Ag 2 Te/As-Te.
Claim 9
Dependent Claim
32 words
A method for forming a MLR pattern in accordance with claim 1, wherein the first top resist film is formed with a thickness of 2000 Å-3000 Å by a RF sputtering method.
Claim 10
Dependent Claim
32 words
A method for forming a MLR pattern in accordance with claim 1, wherein the second top resist film is formed with a thickness smaller than 500 Å by a RF sputtering method.
Claim 11
Dependent Claim
21 words
A method for forming a MLR pattern in accordance with claim 1, wherein the top resist film is a positive type.
Claim 12
Dependent Claim
28 words
A method for forming a MLR pattern in accordance with claim 1, wherein the exposed portion of the second top resist film is etched by an alkaline solution.
Claim 13
Dependent Claim
38 words
A method for forming a MLR pattern in accordance with claim 1, wherein the second top resist film of the pattern of the top resist film is removed by a compound solution of HNO 3 -HCl-H 2 O.
Claim 14
Dependent Claim
32 words
A method for forming a MLR pattern in accordance with claim 1, wherein the first top resist film of the pattern of the top resist film is removed by an alkaline solution.
Claim 15
Dependent Claim
42 words
A method for forming a MLR pattern in accordance with claim 1, wherein the first top resist film of the pattern of the top resist film is removed by using one of CF 4 gas, CHF 3 gas and SF 6 gas.
Claim 16
Independent Claim
169 words
A method for forming a MLR pattern comprising the steps of: forming a bottom resist film on a semiconductor substrate in which a semiconductor device having steps is formed; forming an inter-layer on the bottom resist film; forming a top resist film on the inter-layer, wherein the top resist film comprises a first top resist film made of an inorganic material and a second top resist film made of another inorganic material and formed on the first top resist film; exposing the top resist film using a pattern mask; etching the unexposed portion of the second top resist film of the top resist film; etching the first top resist film using the remaining-exposed portion of the second top resist film as an etch mask, to form a pattern of the top resist film; etching the inter-layer and the bottom resist film using the pattern of the top resist film as an etch mask, in this order, to form a MLR pattern; and removing the pattern of top resist film.
Claim 17
Independent Claim
169 words
A method for forming a MLR pattern comprising the steps of: forming a bottom resist film on a semiconductor substrate in which a semiconductor device having steps is formed; forming an inter-layer on the bottom resist film; forming a top resist film on the inter-layer, wherein the top resist film comprises a first top resist film made of an inorganic material and a second top resist film made of another inorganic material and formed on the first top resist film; exposing the top resist film using a pattern mask; etching the unexposed portion of the second top resist film of the top resist film; etching the first top resist film using the remaining-exposed portion of the second top resist film as an etch mask, to form a pattern of the top resist film; etching the inter-layer and the bottom resist film using the pattern of the top resist film as an etch mask, in this order, to form a MLR pattern; and removing the pattern of top resist film.
Claim 18
Dependent Claim
21 words
A method for forming a MLR pattern in accordance with claim 15, wherein the top resist film is a negative type.
Claim 19
Dependent Claim
34 words
A method for forming a MLR pattern in accordance with claim 15, wherein the unexposed portion of the second top resist film is etched by a compound solution of HNO 3 -HCl-H 2 O.
Claim 20
Dependent Claim
26 words
A method for forming a MLR pattern in accordance with claim 15, wherein the pattern of the top resist film is removed by an alkaline solution.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |