US5449644A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for contact hole formation using a sacrificial SOG layer
Assignee: United Microelectronics Corp
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Filing: 1994-01-13
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Granted: 1995-09-12
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Expires: 2014-01-13
Abstract
Abstract A new method of forming a contact opening by using a sacrificial spin-on-glass layer is described. A semiconductor substrate is provided wherein the surface of the substrate has an uneven topography. A glasseous layer is deposited over the uneven surface of the substrate and reflowed at low temperature whereby the glasseous layer will have a trench shaped surface over the planned contact opening area. The glasseous layer is covered with a spin-on-glass layer wherein the spin-on-glass planarizes the surface of the substrate. The spin-on-glass layer is baked and then covered with a uniform thickness layer of photoresist. The photoresist layer is exposed and developed to form the desired photoresist mask for the contact opening. The exposed spin-on-glass and glasseous layers are etched away to provide the contact opening to the semiconductor substrate. The photoresist layer is stripped and the sacrificial spin-on-glass layer is removed to complete the formation of the contact opening in the manufacture of the integrated circuit.
Inventors
- 👤 Gary Hong
- 👤 Cheng H. Huang
- 👤 Ming-Tzong Yang
- 👤 Hong-Tsz Pan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; Y; Y10; Y10S; Y10S148/00; Y10S148/133
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
172 words
The method of forming a contact opening using a sacrificial spin-on-glass layer in the fabrication of an integrated circuit comprising: providing semiconductor device structures in and on a semiconductor substrate wherein the surface of said substrate has an uneven topography; depositing a glasseous layer over said uneven surface of said substrate and reflowing said glasseous layer whereby said glasseous layer will have a trench shaped surface over planned said contact opening area; covering said glasseous layer with a sacrificial spin-on-glass layer wherein said sacrificial spin-on-glass planarizes the surface of said substrate and baking said sacrificial spin-on-glass layer; covering said sacrificial spin-on-glass layer with a uniform thickness layer of photoresist; exposing and developing said photoresist layer to form the desired photoresist mask for said contact opening; etching said exposed sacrificial spin-on-glass and glasseous layers to provide said contact opening to said semiconductor substrate; stripping said photoresist layer; and removing said sacrificial spin-on-glass layer to complete said contact opening in the manufacture of said integrated before forming subsequent metallization within said contact opening circuit.
Claim 2
Independent Claim
172 words
The method of forming a contact opening using a sacrificial spin-on-glass layer in the fabrication of an integrated circuit comprising: providing semiconductor device structures in and on a semiconductor substrate wherein the surface of said substrate has an uneven topography; depositing a glasseous layer over said uneven surface of said substrate and reflowing said glasseous layer whereby said glasseous layer will have a trench shaped surface over planned said contact opening area; covering said glasseous layer with a sacrificial spin-on-glass layer wherein said sacrificial spin-on-glass planarizes the surface of said substrate and baking said sacrificial spin-on-glass layer; covering said sacrificial spin-on-glass layer with a uniform thickness layer of photoresist; exposing and developing said photoresist layer to form the desired photoresist mask for said contact opening; etching said exposed sacrificial spin-on-glass and glasseous layers to provide said contact opening to said semiconductor substrate; stripping said photoresist layer; and removing said sacrificial spin-on-glass layer to complete said contact opening in the manufacture of said integrated before forming subsequent metallization within said contact opening circuit.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein said glasseous layer is composed of borophosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein said glasseous layer is composed of phosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein said glasseous layer is composed of tetraethylorthosilicate and borophosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 6
Dependent Claim
25 words
The method of claim 1 wherein said reflow is at less than about 850° C. and wherein said fellow serves to densify said glasseous layer.
Claim 7
Dependent Claim
11 words
The method of claim 1 wherein said spin-on-glass material is siloxane.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein said spin-on-glass material is a silicate.
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein said spin-on-glass layer has a thickness of between about 1000 to 5000 Angstroms.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein said spin-on-glass layer is baked at between about 50° to 200° C.
Claim 11
Dependent Claim
21 words
The method of claim 1 wherein said etching of said exposed spin-on-glass and said glasseous layer is a reactive ion etch.
Claim 12
Dependent Claim
16 words
The method of claim 1 wherein said spin-on-glass layer is removed by a buffered oxide etch.
Claim 13
Independent Claim
167 words
The method of forming a contact opening using a sacrificial spin-on-glass layer in the fabrication of an integrated circuit comprising: providing semiconductor device structures in and on a semiconductor substrate wherein the surface of said substrate has an uneven topography; depositing an insulating layer over said uneven surface of said substrate whereby said insulating layer will have a trench shaped surface over planned said contact opening area; covering said insulating layer with a sacrificial spin-on-glass layer wherein said sacrificial spin-on-glass planarizes the surface of said substrate and baking said sacrificial spin-on-glass layer; covering said sacrificial spin-on-glass layer with a uniform thickness layer of photoresist; exposing and developing said photoresist layer to form the desired photoresist mask for said contact opening; etching said exposed sacrificial spin-on-glass and insulating layers to provide said contact opening to said semiconductor substrate; stripping said photoresist layer; and removing said sacrificial spin-on-glass layer to complete said contact opening in the manufacture of said integrated before forming subsequent metallization within said contact opening circuit.
Claim 14
Independent Claim
167 words
The method of forming a contact opening using a sacrificial spin-on-glass layer in the fabrication of an integrated circuit comprising: providing semiconductor device structures in and on a semiconductor substrate wherein the surface of said substrate has an uneven topography; depositing an insulating layer over said uneven surface of said substrate whereby said insulating layer will have a trench shaped surface over planned said contact opening area; covering said insulating layer with a sacrificial spin-on-glass layer wherein said sacrificial spin-on-glass planarizes the surface of said substrate and baking said sacrificial spin-on-glass layer; covering said sacrificial spin-on-glass layer with a uniform thickness layer of photoresist; exposing and developing said photoresist layer to form the desired photoresist mask for said contact opening; etching said exposed sacrificial spin-on-glass and insulating layers to provide said contact opening to said semiconductor substrate; stripping said photoresist layer; and removing said sacrificial spin-on-glass layer to complete said contact opening in the manufacture of said integrated before forming subsequent metallization within said contact opening circuit.
Claim 15
Dependent Claim
24 words
The method of claim 12 wherein said insulating layer is composed of borophosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 16
Dependent Claim
32 words
The method of claim 13 wherein said borophosphosilicate glass layer is reflowed at a temperature of less than about 850° C. and wherein said reflow serves to densify said borophosphosilicate glass layer.
Claim 17
Dependent Claim
24 words
The method of claim 12 wherein said insulating layer is composed of phosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 18
Dependent Claim
32 words
The method of claim 15 wherein said phosphosilicate glass layer is reflowed at a temperature of less than about 850° C. and wherein said reflow serves to densify said phosphosilicate glass layer.
Claim 19
Dependent Claim
24 words
The method of claim 12 wherein said insulating layer is composed of thermal tetraethoxysilane with a thickness of between about 3000 to 9000 Angstroms.
Claim 20
Dependent Claim
25 words
The method of claim 12 wherein said insulating layer is composed of O 3 --tetraethoxysilane with a thickness of between about 3000 to 9000 Angstroms.
Claim 21
Dependent Claim
27 words
The method of claim 12 wherein said insulating layer is composed of ECR chemically vapor deposited oxide with a thickness of between about 3000 to 9000 Angstroms.
Claim 22
Dependent Claim
24 words
The method of claim 12 wherein said insulating layer is composed of tetraethylorthosilicate-borophosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 23
Dependent Claim
11 words
The method of claim 12 wherein said spin-on-glass material is siloxane.
Claim 24
Dependent Claim
12 words
The method of claim 12 wherein said spin-on-glass material is a silicate.
Claim 25
Dependent Claim
19 words
The method of claim 12 wherein said spin-on-glass layer has a thickness of between about 1000 to 5000 Angstroms.
Claim 26
Dependent Claim
18 words
The method of claim 12 wherein said spin-on-glass layer is baked at between about 50° to 200° C.
Claim 27
Dependent Claim
21 words
The method of claim 12 wherein said etching of said exposed spin-on-glass and said insulating layer is a reactive ion etch.
Claim 28
Dependent Claim
16 words
The method of claim 12 wherein said spin-on-glass layer is removed by a buffered oxide etch.
Claim 29
Independent Claim
213 words
The method of forming a contact using a sacrificial spin-on-glass layer in the fabrication of an integrated circuit comprising: providing semiconductor device structures in and on a semiconductor substrate wherein said semiconductor device structures include at least two gate electrodes on the surface of said semiconductor substrate and source/drain regions within said semiconductor substrate and wherein the surface of said substrate has an uneven topography; depositing an insulating layer over said uneven surface of said substrate whereby said insulating layer will have a trench shaped surface over planned said contact area between two said gate electrodes; covering said insulating layer with a sacrificial spin-on-glass layer wherein said sacrificial spin-on-glass planarizes the surface of said substrate and baking said sacrificial spin-on-glass layer; covering said spin-on-glass layer with a uniform thickness layer of photoresist; exposing and developing said photoresist layer to form the desired photoresist mask for said contact; etching said exposed sacrificial spin-on-glass and insulating layers to provide an opening for said contact to said source/drain region within said semiconductor substrate; stripping said photoresist layer; removing said sacrificial spin-on-glass layer; thereafter filling said contact opening with a conducting layer and patterning said conducting layer; and depositing a passivation layer overlying said conducting layer to complete said contact in the manufacture of said integrated circuit.
Claim 30
Independent Claim
213 words
The method of forming a contact using a sacrificial spin-on-glass layer in the fabrication of an integrated circuit comprising: providing semiconductor device structures in and on a semiconductor substrate wherein said semiconductor device structures include at least two gate electrodes on the surface of said semiconductor substrate and source/drain regions within said semiconductor substrate and wherein the surface of said substrate has an uneven topography; depositing an insulating layer over said uneven surface of said substrate whereby said insulating layer will have a trench shaped surface over planned said contact area between two said gate electrodes; covering said insulating layer with a sacrificial spin-on-glass layer wherein said sacrificial spin-on-glass planarizes the surface of said substrate and baking said sacrificial spin-on-glass layer; covering said spin-on-glass layer with a uniform thickness layer of photoresist; exposing and developing said photoresist layer to form the desired photoresist mask for said contact; etching said exposed sacrificial spin-on-glass and insulating layers to provide an opening for said contact to said source/drain region within said semiconductor substrate; stripping said photoresist layer; removing said sacrificial spin-on-glass layer; thereafter filling said contact opening with a conducting layer and patterning said conducting layer; and depositing a passivation layer overlying said conducting layer to complete said contact in the manufacture of said integrated circuit.
Claim 31
Dependent Claim
24 words
The method of claim 27 wherein said insulating layer is composed of borophosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 32
Dependent Claim
33 words
The method of claim 28 wherein said borophosphosilicate glass layer is reflowed at a low temperature of less than about 850° C. and wherein said reflow serves to densify said borophosphosilicate glass layer.
Claim 33
Dependent Claim
24 words
The method of claim 27 wherein said insulating layer is composed of phosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 34
Dependent Claim
32 words
The method of claim 27 wherein said phosphosilicate glass layer is reflowed at a temperature of less than about 850° C. and wherein said reflow serves to densify said phosphosilicate glass layer.
Claim 35
Dependent Claim
24 words
The method of claim 27 wherein said insulating layer is composed of thermal tetraethoxysilane with a thickness of between about 3000 to 9000 Angstroms.
Claim 36
Dependent Claim
25 words
The method of claim 27 wherein said insulating layer is composed of O 3 --tetraethoxysilane with a thickness of between about 3000 to 9000 Angstroms.
Claim 37
Dependent Claim
27 words
The method of claim 27 wherein said insulating layer is composed of ECR chemically vapor deposited oxide with a thickness of between about 3000 to 9000 Angstroms.
Claim 38
Dependent Claim
25 words
The method of claim 27 wherein said insulating layer is composed of tetraethylorthosilicate borophosphosilicate glass with a thickness of between about 3000 to 9000 Angstroms.
Claim 39
Dependent Claim
19 words
The method of claim 27 wherein said spin-on-glass layer has a thickness of between about 1000 to 5000 Angstroms.
Claim 40
Dependent Claim
18 words
The method of claim 27 wherein said spin-on-glass layer is baked at between about 50° to 200° C.
Claim 41
Dependent Claim
21 words
The method of claim 27 wherein said etching of said exposed spin-on-glass and said insulating layer is a reactive ion etch.
Claim 42
Dependent Claim
16 words
The method of claim 27 wherein said spin-on-glass layer is removed by a buffered oxide etch.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-11 | 1999-03-13 | 1999-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-11 | 2003-03-13 | 2003-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-11 | 2007-03-13 | 2007-09-12 | $7700.00 | Window Closed / Lapsed |