Abstract A method of forming a planarized or smoothed dielectric or other material layer upon a partially fabricated intergrated circuit is disclosed. Conventional planarization techniques involve deposition of a dielectric or other material layer followed by anisotropic etchback. Unfortunately, some commercial equipment tends to etch the center of the wafer faster than the edges. The disclosed process forms a layer which is thicker in the central region than the edge region. Thus, when the disclosed process is followed by a conventional etchback, a planar dielectric or other material layer over the entire wafer is formed. Other aspects of the invention include processes and apparatus for producing smooth deposition and etching by control of the impedance of the etching and/or chemical precursor gases.
A method of forming a material layer upon a substrate comprising: positioning said substrate opposite a shower head, said shower head having a plurality of holes, said holes in the center of said shower head being larger than said holes at the edge of said shower head; directing a precursor gas through shower head, whereby said precursor gas may decompose to form said material layer having a greater thickness at the portion of said substrate positioned opposite the center of said shower head than at the edge of said substrate.
Claim 2
Independent Claim
90 words
A method of forming a material layer upon a substrate comprising: positioning said substrate opposite a shower head, said shower head having a plurality of holes, said holes in the center of said shower head being larger than said holes at the edge of said shower head; directing a precursor gas through shower head, whereby said precursor gas may decompose to form said material layer having a greater thickness at the portion of said substrate positioned opposite the center of said shower head than at the edge of said substrate.