Solid state plasma chamber tuner

Claim 2

A switched variable inductor network for adjusting a voltage standing wave ratio of a plasma processing system, the switched variable inductor network coupled between an RF generator and a plasma chamber of the plasma processing system, the switched variable inductor network comprising, a variable inductor constructed as a transformer having a primary and secondary winding and referencing a common ground of the network, individual selectable inductance means for varying the effective value of the variable inductor and including at least one selectable portion, the individual selectable inductance means coupled to the secondary winding of the transformer and referencing the common ground, and switching means for switching the at least one selectable portion of the individual selectable inductance means in and out of the secondary winding of the transformer and including at least one pin diode electrically coupled to at least one FET switch and a single voltage source electrically coupled to the FET switch to selectively forward bias the pin diode, the pin diode electrically coupled in series with the selectable portion of the individual selectable inductance means, the switching means referencing the common ground.

Claim 3

The switched variable inductor network of claim 1, wherein the transformer is constructed from coaxial cable having a shield serving as the primary winding of the transformer and a center conductor serving as the secondary winding of the transformer.

Claim 4

The switched variable inductor network of claim 1, wherein the at least one selectable portion is a plurality of inductive networks electrically coupled in parallel forming the individual selectable inductance means and the at least one pin diode and the at least one FET switch is a plurality of pin diodes and FET switches electrically coupled in series forming the switching means.

Claim 5

The switched variable inductor network of claim 3, wherein a first side of each of the plurality of inductive networks is coupled to a cathode of each of the plurality of pin diodes respectively and a second side of each of the plurality of inductive networks is coupled to each of the plurality of FET switches respectively.

Claim 6

The switched variable inductor network of claim 1, wherein the at least one selectable portion is a plurality of capacitive networks electrically coupled in parallel forming the individual selectable inductance means and the at least one pin diode and the at least one FET switch is a plurality of pin diodes and FET switches electrically coupled in series forming the switching means.

Claim 7

The switched variable inductor network of claim 5, wherein a first side of each of the plurality of capacitive networks is coupled to a cathode of each of the plurality of pin diodes respectively and a second side of each of the plurality of capacitive networks references the common ground, and wherein each of the plurality of FET switches is coupled to a point intermediate each of the first sides of the plurality of capacitive networks and each of the cathodes of the plurality of pin diodes respectively.

Claim 8

The variable inductor network of claim 1, further comprising a control means for measuring the voltage standing wave ratio of the plasma processing system and for automatically controlling the at least one FET switch, the control means electrically coupled intermediate the RF generator and the at least one FET switch.

Claim 9

The switched variable inductive network of claim 7, wherein the control means comprises, a voltage standing wave ratio comparator comparing a ratio of forward power to reflected power of the plasma processing system to a set point programmed in the comparator, and a sequence scanner coupled at a first side to the voltage standing wave ratio comparator and at a second side to the at least one FET switch, the sequence scanner controlling the at least one FET switch.

Claim 10

The switched variable inductor network of claim 8, wherein the control means is an integrated circuit.

Claim 11

The switched variable inductor network of claim 8, wherein a directional coupler of the RF generator directs a value of forward and reflected power of the plasma processing system to the comparator.

Claim 12

The switched variable inductor network of claim 7, wherein a DC power source coupled to an anode of the at least one pin diode supplies power to the control means.

Claim 13

The switched variable inductor network of claim 1, wherein the voltage standing wave ratio is adjusted in steps.

Claim 14

The switched variable inductor network of claim 1, further comprising at least one RF choke coupled between the at least one selectable portion of the individual selectable inductance means and the at least one FET switch of the switching means, the RF choke preventing any RF current from passing therethrough.

Claim 15

A solid state tuner for adjusting a voltage standing wave ratio of a plasma processing system, the plasma processing system including an RF generator and a plasma chamber, the tuner comprising, an input coupled to an output of the RF generator, an output coupled to an input of the plasma chamber, a variable inductor constructed as a transformer having a primary and secondary winding and referencing a common ground of the network, the primary winding coupled intermediate the input and output of the tuner, individual selectable inductance means for varying the effective value of the variable inductor and including at least one selectable portion, the individual selectable inductance means coupled to the secondary winding of the transformer and referencing the common ground, and switching means for switching the at least one selectable portion of the individual selectable inductance means in and out of the secondary winding of the transformer and including at least one pin diode electrically coupled to at least one FET switch and a single voltage source electrically coupled to the FET switch to selectively forward bias the pin diode, the pin diode electrically coupled in series with the selectable portion of the individual selectable inductance means, the switching means referencing the common ground.

Claim 16

A solid state tuner for adjusting a voltage standing wave ratio of a plasma processing system, the plasma processing system including an RF generator and a plasma chamber, the tuner comprising, an input coupled to an output of the RF generator, an output coupled to an input of the plasma chamber, a variable inductor constructed as a transformer having a primary and secondary winding and referencing a common ground of the network, the primary winding coupled intermediate the input and output of the tuner, individual selectable inductance means for varying the effective value of the variable inductor and including at least one selectable portion, the individual selectable inductance means coupled to the secondary winding of the transformer and referencing the common ground, and switching means for switching the at least one selectable portion of the individual selectable inductance means in and out of the secondary winding of the transformer and including at least one pin diode electrically coupled to at least one FET switch and a single voltage source electrically coupled to the FET switch to selectively forward bias the pin diode, the pin diode electrically coupled in series with the selectable portion of the individual selectable inductance means, the switching means referencing the common ground.

Claim 17

The solid state tuner of claim 14, further comprising impedance step down means for providing an intermediate impedance to the tuner, the impedance step down means coupled to the variable inductor.

Claim 18

The solid state tuner of claim 15, wherein the intermediate impedance is 8.7 ohm.

Claim 19

The solid state tuner of claim 14, wherein the at least one selectable portion is a plurality of inductive networks electrically coupled in parallel forming the individual selectable inductance means and the at least one pin diode and the at least one FET switch is a plurality of pin diodes and FET switches electrically coupled in series forming the switching means.

Claim 20

The solid state tuner of claim 14, wherein the at least one selectable portion is a plurality of capacitive networks electrically coupled in parallel forming the individual selectable inductance means and the at least one pin diode and the at least one FET switch is a plurality of pin diodes and FET switches electrically coupled in series forming the switching means.

Claim 21

The solid state tuner of claim 14 further comprising a control means for measuring the voltage standing wave ratio of the plasma processing system and for automatically controlling the at least one FET switch, the control means electrically coupled intermediate the RF generator and the at least one FET switch.

Claim 22

A solid state tuner for adjusting a voltage standing wave ratio of a plasma processing system, the plasma processing system including an RF generator and a plasma chamber, the tuner comprising, an input coupled to an output of the RF generator, an output coupled to an input of the plasma chamber, a variable inductor constructed as a transformer having a primary and secondary winding and referencing a common ground of the network, the primary winding coupled intermediate the input and output of the tuner, impedance step down means for providing an intermediate impedance to the tuner, the impedance step down means coupled to the variable inductor, individual selectable inductance means for varying the effective value of the variable inductor and including at least one selectable portion, the individual selectable inductance means coupled to the secondary winding of the transformer and referencing the common ground, switching means for switching the at least one selectable portion of the individual selectable inductance means in and out of the secondary winding of the transformer and including at least one pin diode electrically coupled to at least one FET switch and a single voltage source electrically coupled to the FET switch to selectively forward bias the pin diode, the pin diode electrically coupled in series with the selectable portion of the individual selectable inductance means, the switching means referencing the common ground, and control means for measuring the voltage standing wave ratio of the plasma processing system and for automatically controlling the at least one FET switch, the control means electrically coupled intermediate the RF generator and the at least one FET switch.

Claim 23

A solid state tuner for adjusting a voltage standing wave ratio of a plasma processing system, the plasma processing system including an RF generator and a plasma chamber, the tuner comprising, an input coupled to an output of the RF generator, an output coupled to an input of the plasma chamber, a variable inductor constructed as a transformer having a primary and secondary winding and referencing a common ground of the network, the primary winding coupled intermediate the input and output of the tuner, impedance step down means for providing an intermediate impedance to the tuner, the impedance step down means coupled to the variable inductor, individual selectable inductance means for varying the effective value of the variable inductor and including at least one selectable portion, the individual selectable inductance means coupled to the secondary winding of the transformer and referencing the common ground, switching means for switching the at least one selectable portion of the individual selectable inductance means in and out of the secondary winding of the transformer and including at least one pin diode electrically coupled to at least one FET switch and a single voltage source electrically coupled to the FET switch to selectively forward bias the pin diode, the pin diode electrically coupled in series with the selectable portion of the individual selectable inductance means, the switching means referencing the common ground, and control means for measuring the voltage standing wave ratio of the plasma processing system and for automatically controlling the at least one FET switch, the control means electrically coupled intermediate the RF generator and the at least one FET switch.