Sense amplifier having variable sensing load for non-volatile memory

Claim 2

A sensing device for a memory operating with a supply voltage and comprising a plurality of memory cells each of whose ON and OFF states represents stored memory information and a reference cell which is maintained continuously in one of the ON and OFF states, said sensing circuit comprising: (a) a reference circuit connected to the reference cell and representing a reference load capable of carrying a first reference load current, (b) a sensing circuit connected to at least one of the memory cells and representing a sensing load for the memory cell, said sensing load being capable of carrying a second sensing load current, the ratio of said first reference load current to said second sensing load current being non-zero, (c) means responsive to a value of the supply voltage for changing the ratio of said first reference load current to said second sensing load current.

Claim 3

A sensing device for a memory operating with a supply voltage and comprising a plurality of memory cells each of whose ON and OFF states represents stored memory information and a reference cell which is maintained continuously in one of the ON and OFF states, said sensing circuit comprising: (a) a reference circuit connected to the reference cell and representing a reference load for the reference cell, said reference load corresponding to a first plurality of parallel-connected transistors and capable of carrying a first reference load current, (b) a sensing circuit connected to at least one of the memory cells and representing a sensing load for the memory cell, said sensing load corresponding to a second plurality of parallel-connected transistors and capable of carrying a second sensing load current, the ratio of said first reference load current to said second sensing load current representing the sensitivity of said sensing circuit, (c) means responsive to a value of the supply voltage for changing the ratio of said first reference load current to said second sensing load current and thereby changing the sensing circuit sensitivity in response to changes in the supply voltage.

Claim 4

A sensing device for a memory operating with a supply voltage and comprising a plurality of memory cells each of whose ON and OFF states represents stored memory information and a reference cell which is maintained continuously in one of the ON and OFF states, said sensing circuit comprising: (a) a reference circuit connected to the reference cell and representing a reference load for the reference cell, said reference load corresponding to a first plurality of parallel-connected transistors and capable of carrying a first reference load current, (b) a sensing circuit connected to at least one of the memory cells and representing a sensing load for the memory cell, said sensing load corresponding to a second plurality of parallel-connected transistors and capable of carrying a second sensing load current, the ratio of said first reference load current to said second sensing load current representing the sensitivity of said sensing circuit, (c) means responsive to a value of the supply voltage for changing the ratio of said first reference load current to said second sensing load current and thereby changing the sensing circuit sensitivity in response to changes in the supply voltage.

Claim 5

The memory sensing device of claim 2, wherein the first plurality of transistors is greater than the second plurality of transistors.

Claim 6

The memory sensing device of claim 2, wherein the means of claim element (c) for changing the ratio comprises: (i) first means for outputting a control voltage whose value depends on the supply voltage, (ii) second means comprising a voltage divider including a transistor connected to receive the control voltage and whose current depends upon the control voltage and establishing in response to the control voltage a first bias voltage, (iii) third means connected to receive the first bias voltage and functioning as a variable resistance, said third means being connected in series in the sensing circuit.

Claim 7

A sensing circuit for a non-volatile memory operating from a supply voltage and comprising non-volatile memory cells and a non-volatile reference cell maintained in an un-programmed condition, said sensing circuit comprising means for determining the sensed current of a memory cell when accessed and comparing it with the reference current to determine whether the accessed memory cell is programmed or un-programmed, said sensing circuit comprising: (a) a scalable current mirror circuit connected to the reference and memory cells and providing a first ratio, M, of reference current to sensed current, (b) means in response to changes in the supply voltage to vary the first ratio M.

Claim 8

A sensing circuit for a non-volatile memory operating from a supply voltage and comprising non-volatile memory cells and a non-volatile reference cell maintained in an un-programmed condition, said sensing circuit comprising means for determining the sensed current of a memory cell when accessed and comparing it with the reference current to determine whether the accessed memory cell is programmed or un-programmed, said sensing circuit comprising: (a) a scalable current mirror circuit connected to the reference and memory cells and providing a first ratio, M, of reference current to sensed current, (b) means in response to changes in the supply voltage to vary the first ratio M.

Claim 9

The memory sensing circuit of claim 5, wherein the means of claim element (b) comprises means for reducing the first ratio M in response to increases in the supply voltage.

Claim 10

The memory sensing circuit of claim 5, wherein the scalable current mirror circuit comprises a reference load for the reference cell, a fixed and a variable multiplier load for the memory cell, the means of claim element (b) comprising a controllable element connected to the variable multiplier load and means for generating a bias voltage for controlling the controllable element to vary the variable multiplier load.

Claim 11

The memory sensing circuit of claim 7, wherein the reference load comprises X units, the fixed multiplier load comprises Y units, and the variable multiplier load comprises Z units, wherein units represents current supplying size, and (x-1)≧(Y+Z)≧2.

Claim 12

The memory sensing circuit of claim 8, wherein X represents 7 parallel transistors, Y represents 1 transistor, and Z represents 2 transistors, all transistors having the same width:length ratio.

Claim 13

A non-volatile memory circuit comprising plural non-volatile memory cells, a non-volatile reference cell, a supply voltage source for said cells, means for accessing a memory cell and a reference cell to cause both to conduct current dependent upon its programmed or un-programmed state, and a sensing circuit connected to the memory cell and reference cell for sensing their relative currents for determining the state of the memory cell, said sensing circuit comprising means in response to changes in the supply voltage for changing the relative sensitivity of the reference cell current to that of the memory cell current.

Claim 14

A non-volatile memory circuit comprising plural non-volatile memory cells, a non-volatile reference cell, a supply voltage source for said cells, means for accessing a memory cell and a reference cell to cause both to conduct current dependent upon its programmed or un-programmed state, and a sensing circuit connected to the memory cell and reference cell for sensing their relative currents for determining the state of the memory cell, said sensing circuit comprising means in response to changes in the supply voltage for changing the relative sensitivity of the reference cell current to that of the memory cell current.

Claim 15

A non-volatile memory circuit as claimed in claim 10, wherein said sensing circuit comprises: (a) a scalable current mirror circuit connected to the reference and memory cells and providing a first ratio, M, of reference current to sensed current, (b) means in response to changes in the supply voltage to vary the first ratio M.