Patent EP0805000A1 successfully refreshed from Google Patents.
Patent US5502000A successfully refreshed from Google Patents.
US5502000A
Expired / Lapsed
US
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Method of forming a antifuse structure with increased breakdown at edges
Assignee: Xilinx Inc
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Filing: 1995-05-08
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Granted: 1996-03-26
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Expires: 2015-05-08
Abstract
Abstract An antifuse is provided which includes a first conductive layer, an antifuse layer formed on the first conductive layer, and a second conductive layer formed on the antifuse layer. A portion of the antifuse layer forms a substantially orthogonal angle with the first conductive layer and the second conductive layer. This "corner" formation of the antifuse enhances the electric field at this location during programming, thereby providing a predictable location for the filament, i.e. the conductive path between the first and second conductive layers. This antifuse provides other advantages including: a relatively low programming voltage, good step coverage for the antifuse layer and the upper conductive layer, a low, stable resistance value, and minimal shearing effects on the filament.
Inventors
- 👤 Kevin T. Look
- 👤 Evert A. Wolsheimer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W20/40; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
111 words
A method of forming an antifuse comprising the steps of: (a) forming a first conductive layer on a substrate; (b) forming a first oxide layer on said first conductive layer; (c) forming a via in said first oxide layer which extends to said first conductive layer, wherein said via includes a lower portion forming a profile perpendicular to said first conductive layer, and an upper portion forming a concave profile; (d) forming an antifuse layer on said first conductive layer, wherein the top surface of said antifuse layer follows the contours of said lower and upper portions of said via; and (e) forming a second conductive layer on said antifuse layer.
Claim 2
Independent Claim
111 words
A method of forming an antifuse comprising the steps of: (a) forming a first conductive layer on a substrate; (b) forming a first oxide layer on said first conductive layer; (c) forming a via in said first oxide layer which extends to said first conductive layer, wherein said via includes a lower portion forming a profile perpendicular to said first conductive layer, and an upper portion forming a concave profile; (d) forming an antifuse layer on said first conductive layer, wherein the top surface of said antifuse layer follows the contours of said lower and upper portions of said via; and (e) forming a second conductive layer on said antifuse layer.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein said antifuse layer forms a substantially orthogonal angle with each of said first conductive layer and said second conductive layer.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein step (d) includes forming an amorphous silicon layer.
Claim 5
Dependent Claim
19 words
The method of claim 3 wherein said amorphous silicon layer is formed to a thickness between 350Å and 550Å.
Claim 6
Dependent Claim
18 words
The method of claim 3 wherein said amorphous silicon layer is formed to a thickness of approximately 450Å.
Claim 7
Dependent Claim
30 words
The method of claim 3 wherein step (d) includes forming a second oxide layer on the bottom of said via between said first conductive layer and said amorphous silicon layer.
Claim 8
Dependent Claim
17 words
The method of claim 6 wherein said second oxide layer is formed from said first conductive layer.
Claim 9
Dependent Claim
19 words
The method of claim 6 wherein said second oxide layer is formed to a thickness between 35Å and 70Å.
Claim 10
Dependent Claim
13 words
The method of claim 7 wherein said second oxide layer includes titanium oxide.
Claim 11
Dependent Claim
13 words
The method of claim 7 wherein said second oxide layer includes tungsten oxide.
Claim 12
Dependent Claim
19 words
The method of claim 7 wherein said second oxide layer includes a combination of titanium oxide and tungsten oxide.
Claim 13
Dependent Claim
24 words
The method of claim 6 wherein step (d) includes forming a third oxide layer between said amorphous silicon layer and said second conductive layer.
Claim 14
Dependent Claim
15 words
The method of claim 12 wherein said third oxide layer includes a silicon dioxide layer.
Claim 15
Dependent Claim
19 words
The method of claim 12 wherein said third oxide layer is formed to a thickness between 10Å and 30Å.
Claim 16
Dependent Claim
21 words
The method of claim 12 wherein said third oxide layer completely insulates said amorphous silicon layer from said second conductive layer.
Claim 17
Dependent Claim
18 words
The method of claim 1 wherein said first conductive layer forms a lower conductive terminal of said antifuse.
Claim 18
Dependent Claim
14 words
The method of claim 1 wherein said first conductive layer includes a conductive metal.
Claim 19
Dependent Claim
11 words
The method of claim 17 wherein said conductive metal includes aluminum.
Claim 20
Dependent Claim
13 words
The method of claim 17 wherein said conductive metal includes an aluminum-silicon alloy.
Claim 21
Dependent Claim
13 words
The method of claim 17 wherein said conductive metal includes an aluminum-silicon-copper alloy.
Claim 22
Dependent Claim
11 words
The method of claim 17 wherein said conductive metal includes titanium.
Claim 23
Dependent Claim
12 words
The method of claim 17 wherein said conductive metal includes titanium nitride.
Claim 24
Dependent Claim
12 words
The method of claim 17 wherein said conductive metal includes titanium tungsten.
Claim 25
Dependent Claim
18 words
The method of claim 1 wherein said second conductive layer forms an upper conductive terminal of said antifuse.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-26 | 1999-09-25 | 2000-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-26 | 2003-09-25 | 2004-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-26 | 2007-09-25 | 2008-03-26 | $7700.00 | Window Closed / Lapsed |