Patent US5528068A successfully refreshed from Google Patents.
US5528068A
Expired / Lapsed
US
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Semiconductor device
Assignee: Foundation for Advancement of International Science
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Filing: 1993-05-12
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Granted: 1996-06-18
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Expires: 2013-05-12
Abstract
Abstract It is an object of the present invention to provide a semiconductor device having a high current driving capability and capable of high-speed circuit operation. This device has a first semiconductor region of one conductivity type on a substrate; source and drain regions of the opposite conductivity type in the first region; a first insulating film on the substrate between the source and drain regions; and a conductive gate electrode on the first insulating film. The first insulating film comprises an insulator having a dielectric constant of 8 or more and its film thickness t I satisfies the following express (1). The source and drain regions are formed in a self-alignment manner with respect to the gate electrode: t r <3×(ε r /ε SiO2 ) (nm) (1) where ε r is the dielectric constant of the first insulating film, and ε Sio2 is the dielectric constant of the silicon oxide film.
Inventors
- 👤 Tadahiro Ohmi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:40
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516; H10D64/691
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
131 words
In a semiconductor device comprising a substrate body a first semiconductor region of (-) conductivity type on the substrate body, source and drain regions of an opposite conductivity type provided in the semiconductor region, said source and drain regions formed in a self-aligning manner and separated by a spacing region, an insulating film disposed on the spacing region and between the source and the drain regions, a gate electrode having a conducting body disposed on the insulating film; the insulating film comprising an insulating body having a dielectric constant of at least 8 and a film thickness t I which satisfies the following equation: t I <3×(ε r /ε SiO2 ) (nm) where ε r =the dielectric constant of the insulating film ε SiO2 =the dielectric constant of silicon oxide film.
Claim 2
Dependent Claim
131 words
In a semiconductor device comprising a substrate body a first semiconductor region of (-) conductivity type on the substrate body, source and drain regions of an opposite conductivity type provided in the semiconductor region, said source and drain regions formed in a self-aligning manner and separated by a spacing region, an insulating film disposed on the spacing region and between the source and the drain regions, a gate electrode having a conducting body disposed on the insulating film; the insulating film comprising an insulating body having a dielectric constant of at least 8 and a film thickness t I which satisfies the following equation: t I <3×(ε r /ε SiO2 ) (nm) where ε r =the dielectric constant of the insulating film ε SiO2 =the dielectric constant of silicon oxide film.
Claim 3
Dependent Claim
36 words
A semiconductor device in accordance with claim 1, wherein a second insulating film, thinner than the insulating film, and which is formed by oxidizing a substrate, is disposed between the substrate and the first insulating film.
Claim 4
Dependent Claim
16 words
A semiconductor device in accordance with claim 1, wherein the gate electrode is comprised of metal.
Claim 5
Dependent Claim
35 words
A semiconductor device in accordance with claim 1, wherein at least one of the insulating film and an insulating film formed by oxidizing the gate electrode, is thicker on an end of the gate electrode.
Claim 6
Dependent Claim
16 words
A semiconductor device in accordance with claim 2, wherein the gate electrode is comprised of metal.
Claim 7
Dependent Claim
39 words
A semiconductor device in accordance with claim 2, wherein at least one of the insulating film, the second insulating film, and an insulating film formed by oxidizing the gate electrode, is thicker on an end of the gate electrode.
Claim 8
Dependent Claim
35 words
A semiconductor device in accordance with claim 3, wherein at least one of the insulating film, and an insulating film formed by oxidizing the gate electrode, is thicker on an end of the gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |