US5576566A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor trench capacitor cell having a buried strap
Assignee: International Business Machines Corp
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Filing: 1995-04-13
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Granted: 1996-11-19
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Expires: 2015-04-13
Abstract
Abstract A semiconductor trench capacitor structure having a first level aligned isolation structure and buried strap that extends from within the trench into the doped semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench within the trench capacitor and semiconductor substrate, depositing a layer of conductive material within the shallow trench, using a mask to define and recess the strap and depositing insulating material within the shallow trench.
Inventors
- 👤 Donald M. Kenney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:56
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
108 words
A semiconductor device, comprising: a semiconductor substrate; a first trench extending from an upper trench level into said substrate, said trench having a first insulating portion with a conductive material situated therein; a doped region disposed adjacent said trench below said upper trench level; and a second trench extending into said doped region and partially intersecting said first trench, said second trench having a first conductive strap adjacent both said conductive material within said first trench and said doped region, said second trench having a second insulation portion at least partially filling said second trench and positioned over and adjacent said first conductive strap of said second trench.
Claim 2
Dependent Claim
108 words
A semiconductor device, comprising: a semiconductor substrate; a first trench extending from an upper trench level into said substrate, said trench having a first insulating portion with a conductive material situated therein; a doped region disposed adjacent said trench below said upper trench level; and a second trench extending into said doped region and partially intersecting said first trench, said second trench having a first conductive strap adjacent both said conductive material within said first trench and said doped region, said second trench having a second insulation portion at least partially filling said second trench and positioned over and adjacent said first conductive strap of said second trench.
Claim 3
Dependent Claim
39 words
The semiconductor structure of claim 1 wherein said second trench has a bottom and wherein said strap is in contact with the bottom of said second trench and all of said strap is disposed below said upper trench level.
Claim 4
Dependent Claim
26 words
The semiconductor structure of claim 1 wherein the second insulation portion of the second trench adjacent said strap extends deeper into said substrate than the strap.
Claim 5
Dependent Claim
34 words
The semiconductor structure of claim 1 wherein said second insulation portion extends over the conductive material of said first trench and said second insulation portion surrounds all but a bottom surface of the strap.
Claim 6
Dependent Claim
20 words
The semiconductor structure of claim 1 further comprising a dielectric layer disposed over an upper surface of said semiconductor substrate.
Claim 7
Dependent Claim
22 words
The semiconductor structure of claim 5 wherein said dielectric layer comprises a layer of silicon nitride over a layer of silicon oxide.
Claim 8
Dependent Claim
21 words
The semiconductor structure of claim 1 wherein a transistor is positioned adjacent to the first trench and opposite to said strap.
Claim 9
Dependent Claim
20 words
The semiconductor structure of claim 6 wherein an active semiconductor channel of an electronic device lies adjacent said first trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-19 | 2000-05-20 | 2000-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-19 | 2004-05-20 | 2004-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-19 | 2008-05-20 | 2008-11-19 | $7700.00 | Window Closed / Lapsed |