Gate array cell architecture and routing scheme

Claim 2

A circuit layout architecture for an integrated circuit using cells comprising: a first group of global interconnect lines made from a first conductive layer and disposed along a first direction; a second group of global interconnect lines made from a second conductive layer above said first conductive layer, and disposed along said first direction; a third group of global interconnect lines made from a third conductive layer above said second conductive layer, and disposed along a second direction substantially different than said first direction; and a plurality of basic cells, each one including diffusion regions for transistor source and drain terminals, gate electrode regions for transistor gate terminals, and contact regions for making electrical contact to said diffusion and gate electrode regions, wherein, a macro cell is made by interconnecting adjacent basic cells, and interconnections internal to a macro cell are made using interconnect lines from said first and second conductive layers, and wherein, said plurality of macro cells are selectively coupled together via said first, second and third group of interconnect lines, wherein each one of said plurality of basic cells comprises a first diffusion region of a first type and a second diffusion region of a second type, and wherein said first and second diffusion regions are laid out in a non-rectangular shape, wherein each of said plurality of basic cells comprises a first and second gate electrode regions, each one of which is shared between a transistor made in said first diffusion region and a transistor made in said second diffusion region, wherein each of said plurality of basic cells has a substantially rectangular shape with a first and second substrate contact regions disposed in corners, and wherein said substantially rectangular shape of each of said plurality of basic cells has a first dimension defined by only nine interconnect lines made from said first conductive layer disposed in parallel in said first direction, and a second dimension defined by only three interconnect lines made from said third conductive layer disposed in parallel in said second direction.

Claim 3

The circuit layout architecture of claim 1, wherein said first and second gate electrode regions form a first and second transistors in each one of said first and second diffusion regions, and wherein said first diffusion region is extended to form a PMOS transistor.

Claim 4

The circuit layout architecture of claim 2, wherein said second diffusion region is extended to define an NMOS transistor.

Claim 5

The circuit layout architecture of claim 1, wherein said first dimension is made larger to accommodate a tenth interconnect line to define ten interconnect lines made from said first conductive layer and disposed in said first direction, said first and second diffusion regions being separated by a minimum width of two of said ten interconnect lines.

Claim 6

The circuit layout architecture of claim 1, wherein a first interconnect line from said first conductive layer makes contact to an interconnect line from said second conductive layer immediately above said first interconnect line forming a double-layer parallel interconnect line to reduce resistance.

Claim 7

A layout architecture for an integrated circuit using cells comprising: a first group of global interconnect lines made from a first conductive layer and disposed along a first direction; a second group of global interconnect lines made from a second conductive layer above said first conductive layer, and disposed along said first direction; a third group of global interconnect lines made from a third conductive layer above said second conductive layer, and disposed along a second direction substantially different than said first direction; and a plurality of basic cells, each one including diffusion regions for transistor source and drain terminals, gate electrode regions for transistor gate terminals, and contact regions for making electrical contact to said diffusion and gate electrode regions, wherein, a macro cell is made by interconnecting adjacent basic cells, and interconnections internal to a macro cell are made using interconnect lines from said first and second conductive layers, and wherein, said plurality of macro cells are selectively coupled together via said first, second and third group of global interconnect lines, wherein each one of said plurality of basic cells comprises a first diffusion region of a first type and a second diffusion region of a second type, and wherein said first and second diffusion regions are laid out in a non-rectangular shape, wherein each of said plurality of basic cells comprises a first and second gate electrode regions, each one of which is shared between a transistor made in said first diffusion region and a transistor made in said second diffusion region, wherein each of said plurality of basic cells has a substantially rectangular shape with a first and second substrate contact regions disposed in corners, wherein a first group of said plurality of basic cells are disposed adjacent to each other to form a first row of basic cells, and a second group of said plurality of basic cells are disposed adjacent to each other to form a second row of basic cells, wherein, said first row is disposed above said second row such that a diffusion region of said first type in a basic cell within said first row is placed laterally adjacent to a diffusion region of said first type in a basic cell within said second row, and wherein, an interconnect line from said first layer at least twice the minimum width of an interconnect line from said first layer extends in the first direction over said substrate contact regions in basic cells of both said first and second rows.

Claim 8

A layout architecture for an integrated circuit using cells comprising: a first group of global interconnect lines made from a first conductive layer and disposed along a first direction; a second group of global interconnect lines made from a second conductive layer above said first conductive layer, and disposed along said first direction; a third group of global interconnect lines made from a third conductive layer above said second conductive layer, and disposed along a second direction substantially different than said first direction; and a plurality of basic cells, each one including diffusion regions for transistor source and drain terminals, gate electrode regions for transistor gate terminals, and contact regions for making electrical contact to said diffusion and gate electrode regions, wherein, a macro cell is made by interconnecting adjacent basic cells, and interconnections internal to a macro cell are made using interconnect lines from said first and second conductive layers, and wherein, said plurality of macro cells are selectively coupled together via said first, second and third group of global interconnect lines, wherein each one of said plurality of basic cells comprises a first diffusion region of a first type and a second diffusion region of a second type, and wherein said first and second diffusion regions are laid out in a non-rectangular shape, wherein each of said plurality of basic cells comprises a first and second gate electrode regions, each one of which is shared between a transistor made in said first diffusion region and a transistor made in said second diffusion region, wherein each of said plurality of basic cells has a substantially rectangular shape with a first and second substrate contact regions disposed in corners, wherein a first group of said plurality of basic cells are disposed adjacent to each other to form a first row of basic cells, and a second group of said plurality of basic cells are disposed adjacent to each other to form a second row of basic cells, wherein, said first row is disposed above said second row such that a diffusion region of said first type in a basic cell within said first row is placed laterally adjacent to a diffusion region of said first type in a basic cell within said second row, and wherein, an interconnect line from said first layer at least twice the minimum width of an interconnect line from said first layer extends in the first direction over said substrate contact regions in basic cells of both said first and second rows.

Claim 9

A basic cell for arrangement in rows for use in an integrated circuit using cells comprising: a P-type active diffusion region having a non-rectangular outline; an N-type active diffusion region having a non-rectangular outline; a first gate electrode extending across said P-type and N-type active diffusion regions in a first direction separating source contact regions and drain contact regions of a first PMOS transistor and separating source contact regions and drain contact regions of a first NMOS transistor, respectively; a second gate electrode extending across said P-type and N-type active diffusion regions in said first direction separating source contact regions and drain contact regions of a second PMOS transistor and separating source contact regions and drain contact regions of a second NMOS transistor, respectively, said first gate electrode having a first end and a opposing second end, said first end having a contact region laterally adjacent said P-type active diffusion region, said second end having no contact region, said first gate electrode having contact at an intermediate contact region, and said second gate electrode having a third end and an opposing fourth end, said third end having a contact region laterally adjacent said N-type active diffusion region, said fourth end having no contact region, said second gate electrode having contact at an intermediate contact region.

Claim 10

A basic cell for arrangement in rows for use in an integrated circuit using cells comprising: a P-type active diffusion region having a non-rectangular outline; an N-type active diffusion region having a non-rectangular outline; a first gate electrode extending across said P-type and N-type active diffusion regions in a first direction separating source contact regions and drain contact regions of a first PMOS transistor and separating source contact regions and drain contact regions of a first NMOS transistor, respectively; a second gate electrode extending across said P-type and N-type active diffusion regions in said first direction separating source contact regions and drain contact regions of a second PMOS transistor and separating source contact regions and drain contact regions of a second NMOS transistor, respectively, said first gate electrode having a first end and a opposing second end, said first end having a contact region laterally adjacent said P-type active diffusion region, said second end having no contact region, said first gate electrode having contact at an intermediate contact region, and said second gate electrode having a third end and an opposing fourth end, said third end having a contact region laterally adjacent said N-type active diffusion region, said fourth end having no contact region, said second gate electrode having contact at an intermediate contact region.

Claim 11

The basic cell of claim 7 further comprising: a substrate contact region and first active diffusion contact region and second active diffusion contact region, wherein, an overall shape of the cell is substantially defined by a rectangle with a first dimension along said first direction and a second dimension along a second direction, and wherein, said substrate contact region is disposed along the same axis as said first active diffusion contact region in said first direction, and said gate electrode contact region is disposed along the same axis as said second active diffusion contact region in said second direction.

Claim 12

The basic cell of claim 8 wherein said substrate contact region further comprises a first substrate contact region and a second substrate contact region each disposed in corners of said rectangle.

Claim 13

The basic cell of claim 9 wherein a length of said first dimension is substantially defined by nine second-layer interconnect lines of minimum dimension and spacing extending in parallel in said second direction, and a length of said second dimension is substantially defined by three third-layer interconnect lines of minimum dimension and spacing extending in said first direction.

Claim 14

The basic cell of claim 8, wherein, in said first direction, each said P-type active diffusion region comprises at least four active diffusion contact regions in a central section, two active diffusion contact regions in a first lateral region separated by said first gate electrode, and at least three active diffusion contact regions in a second lateral region separated by said second gate electrode.

Claim 15

The basic cell of claim 7 wherein first metal interconnect lines are made from a first conductive layer and are disposed in said second direction and wherein second metal interconnect lines are made from a second conductive layer over said first conductive layer in said second direction, and wherein third interconnect lines are made from a third conductive layer over said second conductive layer and are disposed in said first direction.

Claim 16

A circuit layout architecture for an integrated circuit using cells, said circuit layout architecture comprising: a cell having a first pair of PMOS and NMOS transistors and a second pair of PMOS and NMOS transistors, said first and second pairs placed adjacent to each other in a first direction and each transistor having a gate electrode extended substantially in a second direction, said second direction being substantially perpendicular to said first direction; a first interconnect line made from a first conductive layer for making interconnections inside said cell in said first and said second direction; a second interconnect line made from a second conductive layer above said first conductive layer and separated from said first conductive layer by an insulating layer, said second interconnect line for making interconnections internal and external to said cell in said first direction, wherein said cell has a substantially rectangular shape with a first dimension along said first direction defined by a maximum of three contact regions, and a second dimension along said second direction defined by a maximum of nine contact regions.

Claim 17

A circuit layout architecture for an integrated circuit using cells, said circuit layout architecture comprising: a cell having a first pair of PMOS and NMOS transistors and a second pair of PMOS and NMOS transistors, said first and second pairs placed adjacent to each other in a first direction and each transistor having a gate electrode extended substantially in a second direction, said second direction being substantially perpendicular to said first direction; a first interconnect line made from a first conductive layer for making interconnections inside said cell in said first and said second direction; a second interconnect line made from a second conductive layer above said first conductive layer and separated from said first conductive layer by an insulating layer, said second interconnect line for making interconnections internal and external to said cell in said first direction, wherein said cell has a substantially rectangular shape with a first dimension along said first direction defined by a maximum of three contact regions, and a second dimension along said second direction defined by a maximum of nine contact regions.

Claim 18

The circuit layout architecture of claim 13 wherein said cell with substantially rectangular shape further comprises first and second substrate contact regions disposed in corners.

Claim 19

The circuit layout architecture of claim 14 wherein said substantially rectangular-shaped cell comprises three columns of contact regions extending along said first direction, and wherein contact regions from a first and a third column are used to connect to gate electrodes for said PMOS and NMOS transistors.

Claim 20

An integrated circuit using cells comprising: a first group of global interconnect lines made from a first conductive layer and disposed along a first direction; a second group of global interconnect lines made from a second conductive layer above said first conductive layer, and disposed along said first direction; a third group of global interconnect lines made from a third conductive layer above said second conductive layer, and disposed along a second direction substantially different than said first direction; and a plurality of basic cells, each one including diffusion regions for transistor source and drain terminals, gate electrode regions for transistor gate terminals, and contact regions for making electrical contact to said diffusion and gate electrode regions, wherein, a macro cell is made by interconnecting adjacent basic cells, and interconnections internal to a macro cell are made using interconnect lines from said first and second conductive layers, and wherein, said plurality of macro cells are selectively coupled together via said first, second and third group of global interconnect lines, wherein each one of said plurality of basic cells comprises a first diffusion region of a first type and a second diffusion region of a second type, and wherein said first and second diffusion regions are laid out in a non-rectangular shape, wherein each of said plurality of basic cells comprises a first and second gate electrode regions, each one of which is shared between a transistor made in said first diffusion region and a transistor made in said second diffusion region, wherein each of said plurality of basic cells has a substantially rectangular shape with a first and second substrate contact regions disposed in corners, and wherein said substantially rectangular shape of each of said plurality of basic cells has a first dimension defined by only nine interconnect lines made from said first conductive layer disposed in parallel in said first direction, and a second dimension defined by at least three interconnect lines made from said third conductive layer disposed in parallel in said second direction.

Claim 21

An integrated circuit using cells comprising: a first group of global interconnect lines made from a first conductive layer and disposed along a first direction; a second group of global interconnect lines made from a second conductive layer above said first conductive layer, and disposed along said first direction; a third group of global interconnect lines made from a third conductive layer above said second conductive layer, and disposed along a second direction substantially different than said first direction; and a plurality of basic cells, each one including diffusion regions for transistor source and drain terminals, gate electrode regions for transistor gate terminals, and contact regions for making electrical contact to said diffusion and gate electrode regions, wherein, a macro cell is made by interconnecting adjacent basic cells, and interconnections internal to a macro cell are made using interconnect lines from said first and second conductive layers, and wherein, said plurality of macro cells are selectively coupled together via said first, second and third group of global interconnect lines, wherein each one of said plurality of basic cells comprises a first diffusion region of a first type and a second diffusion region of a second type, and wherein said first and second diffusion regions are laid out in a non-rectangular shape, wherein each of said plurality of basic cells comprises a first and second gate electrode regions, each one of which is shared between a transistor made in said first diffusion region and a transistor made in said second diffusion region, wherein each of said plurality of basic cells has a substantially rectangular shape with a first and second substrate contact regions disposed in corners, and wherein said substantially rectangular shape of each of said plurality of basic cells has a first dimension defined by only nine interconnect lines made from said first conductive layer disposed in parallel in said first direction, and a second dimension defined by at least three interconnect lines made from said third conductive layer disposed in parallel in said second direction.

Claim 22

The integrated circuit of claim 16, wherein said first dimension is made larger to add at least a tenth interconnect line to form at least ten interconnect lines made from said first conductive layer and disposed in said first direction, said first and second diffusion regions being separated by a minimum width of two of said at least ten interconnect lines.

Claim 23

A circuit layout architecture for an integrated circuit using cells, said circuit layout architecture comprising: a cell having a first pair of PMOS and NMOS transistors and a second pair of PMOS and NMOS transistors, said first and second pairs placed adjacent to each other in a first direction and each transistor having a gate electrode extended substantially in a second direction, said second direction being substantially perpendicular to said first direction; a first interconnect line made from a first conductive layer for making interconnections inside said cell in said first and said second direction; a second interconnect line made from a second conductive layer above said first conductive layer and separated from said first conductive layer by an insulating layer, said second interconnect line for making interconnections internal and external to said cell in said first direction, wherein said cell has a substantially rectangular shape with a first dimension along said first direction defined by a maximum of three contact regions, and a second dimension along said second direction defined by at least ten contact regions.

Claim 24

A circuit layout architecture for an integrated circuit using cells, said circuit layout architecture comprising: a cell having a first pair of PMOS and NMOS transistors and a second pair of PMOS and NMOS transistors, said first and second pairs placed adjacent to each other in a first direction and each transistor having a gate electrode extended substantially in a second direction, said second direction being substantially perpendicular to said first direction; a first interconnect line made from a first conductive layer for making interconnections inside said cell in said first and said second direction; a second interconnect line made from a second conductive layer above said first conductive layer and separated from said first conductive layer by an insulating layer, said second interconnect line for making interconnections internal and external to said cell in said first direction, wherein said cell has a substantially rectangular shape with a first dimension along said first direction defined by a maximum of three contact regions, and a second dimension along said second direction defined by at least ten contact regions.

Claim 25

The circuit layout architecture of claim 18 wherein said cell with substantially rectangular shape further comprises first and second substrate contact regions disposed in corners.

Claim 26

The circuit layout architecture of claim 19 wherein said cell comprises three columns of contact regions extending along said first direction, and wherein contact regions from a first and a third column are used to connect to gate electrodes for said PMOS and NMOS transistors.