Patent US1954904A successfully refreshed from Google Patents.
US5800747A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for molding using an ion implanted mold
Assignee: NXP USA Inc
•
Filing: 1996-07-02
•
Granted: 1998-09-01
•
Expires: 2016-07-02
Abstract
Abstract A mold tool (40) includes a lower platen (10) and an upper platen (18) which have modified surfaces (16) and (20), respectively. The modified surfaces are formed by implanting an implant species (14) at least into areas of the platens which will be in contact with a molding compound resin. By modifying the surface of the molding tool by ion implantation, the need for cleaning the mold tool is reduced due to lower surface friction and wettability of the modified surfaces. These surface characteristics also facilitate easier release of the molded package from the tool. At the same time, wear resistance of the mold tool is improved due to increased surface hardness.
Inventors
- 👤 Daniel Cavasin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:02
CPC Classifications
B; B29; B29C; B29C45/00; B29C45/17; B29C45/26; B29C45/37; H; H10; H10W; H10W74/00; H10W74/01; B29C33/00; B29C33/38; B29C45/14; B29C45/14639; B29C45/14655; B29C33/3842; B29C70/00; B29C70/68; B29C70/72; B29L; B29L2031/00; B29L2031/30; B29L2031/3055; B29L2031/3061; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
166 words
A method for molding a semiconductor device comprising: providing a mold tool having a cavity which defines the semiconductor device to be molded, wherein the mold tool comprises a first platen having a first surface, wherein a portion of the first surface has been modified by ion implantation to form a first modified surface, and wherein the first surface comprises a contact area and a non-contact area, and the contact area is in contact with the molding compound during the step of filling, and at least a portion of the contact area has been modified by ion implantation to form the first modified surface, and the cavity of the first platen comprises a runner portion and a package portion, and wherein the contact area comprises the runner portion and the package portion of the cavity; providing a semiconductor element; positioning the semiconductor element within the cavity of the mold tool; providing a molding compound; and filling the cavity of the mold tool with the molding compound.
Claim 2
Independent Claim
166 words
A method for molding a semiconductor device comprising: providing a mold tool having a cavity which defines the semiconductor device to be molded, wherein the mold tool comprises a first platen having a first surface, wherein a portion of the first surface has been modified by ion implantation to form a first modified surface, and wherein the first surface comprises a contact area and a non-contact area, and the contact area is in contact with the molding compound during the step of filling, and at least a portion of the contact area has been modified by ion implantation to form the first modified surface, and the cavity of the first platen comprises a runner portion and a package portion, and wherein the contact area comprises the runner portion and the package portion of the cavity; providing a semiconductor element; positioning the semiconductor element within the cavity of the mold tool; providing a molding compound; and filling the cavity of the mold tool with the molding compound.
Claim 3
Dependent Claim
46 words
The method of claim 1, wherein the step of providing a mold tool comprises providing a mold tool further having a second platen having a second surface, wherein a portion of the second surface has been modified by ion implantation to form a second modified surface.
Claim 4
Dependent Claim
33 words
The method of claim 1, wherein the step of providing a semiconductor element comprises: providing a semiconductor die; providing a carrier; and providing an electrical connection between the carrier and the semiconductor die.
Claim 5
Dependent Claim
19 words
The method of claim 1, wherein the step of providing a molding compound comprises providing a resin-based molding compound.
Claim 6
Independent Claim
169 words
A method for molding a semiconductor device comprising: providing a mold tool having a cavity which defines the semiconductor device to be molded, wherein the mold tool comprises a first platen having a first surface, wherein a portion of the first surface has been modified by ion implantation to form a first modified surface, and wherein the first surface comprises a contact area and a non-contact area, and the contact area is in contact with the molding compound during the step of filling, and at least a portion of the contact area has been modified by ion implantation to form the first modified surface, and the cavity of the first platen comprises a runner portion and a package portion, and substantially all of the contact area has been modified by ion implantation to form the first modified surface; providing a semiconductor element; positioning the semiconductor element within the cavity of the mold tool; providing a molding compound; and filling the cavity of the mold tool with the molding compound.
Claim 7
Independent Claim
169 words
A method for molding a semiconductor device comprising: providing a mold tool having a cavity which defines the semiconductor device to be molded, wherein the mold tool comprises a first platen having a first surface, wherein a portion of the first surface has been modified by ion implantation to form a first modified surface, and wherein the first surface comprises a contact area and a non-contact area, and the contact area is in contact with the molding compound during the step of filling, and at least a portion of the contact area has been modified by ion implantation to form the first modified surface, and the cavity of the first platen comprises a runner portion and a package portion, and substantially all of the contact area has been modified by ion implantation to form the first modified surface; providing a semiconductor element; positioning the semiconductor element within the cavity of the mold tool; providing a molding compound; and filling the cavity of the mold tool with the molding compound.
Claim 8
Dependent Claim
67 words
The method of claim 5, wherein the step of providing a mold tool comprises providing a mold tool having a second platen having a second surface wherein the second surface comprises a contact area and a non-contact area, wherein the contact area contacts the molding compound, and at least a portion of the contact area has been modified by ion implantation to form the first modified surface.
Claim 9
Dependent Claim
24 words
The method of claim 1, wherein substantially all of the first surface has been modified by ion implantation to form the first modified surface.
Claim 10
Independent Claim
148 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, and at least one platen has a runner cavity connected to the package cavity during the step of introducing, and the runner cavity also has a doped surface to reduce surface friction; positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 11
Independent Claim
148 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, and at least one platen has a runner cavity connected to the package cavity during the step of introducing, and the runner cavity also has a doped surface to reduce surface friction; positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 12
Dependent Claim
46 words
The method of claim 8 wherein the step of providing a molding tool comprises providing a molding tool having a surface friction coefficient of at least approximately half of a surface friction coefficient of a surface of a similar mold surface that has not been implanted.
Claim 13
Independent Claim
137 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, wherein the doped surface is an ion implanted surface, and the ion implanted surface includes an implant species of (nickel) Ni; positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 14
Independent Claim
137 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, wherein the doped surface is an ion implanted surface, and the ion implanted surface includes an implant species of (nickel) Ni; positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 15
Dependent Claim
39 words
The method of claim 10 wherein the step of providing a molding tool comprises providing a molding tool wherein the ion implanted surface includes an implant species implanted to a depth of at most two micron from the surface.
Claim 16
Independent Claim
137 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, wherein the doped surface is an ion implanted surface, and the ion implanted surface includes an implant species of (tungsten) W: positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 17
Independent Claim
137 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, wherein the doped surface is an ion implanted surface, and the ion implanted surface includes an implant species of (tungsten) W: positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 18
Dependent Claim
39 words
The method of claim 12 wherein the step of providing a molding tool comprises providing a molding tool wherein the ion implanted surface includes an implant species implanted to a depth of at most two micron from the surface.
Claim 19
Independent Claim
137 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, wherein the doped surface is an ion implanted surface, and the ion implanted surface includes an implant species of (titanium) Ti; positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 20
Independent Claim
137 words
A method for molding a semiconductor device comprising the steps of: providing a semiconductor die; providing a molding tool having a lower platen and an upper platen, at least one platen having a package cavity formed in a surface thereof, and wherein the package cavity has a doped surface to reduce surface friction, wherein the doped surface is an ion implanted surface, and the ion implanted surface includes an implant species of (titanium) Ti; positioning the semiconductor die in the molding tool such that the semiconductor die is within the package cavity; bringing the lower platen and the upper platen together; introducing a molding compound into the package cavity and in contact with the doped surface to form a plastic package body which encapsulates the semiconductor die; and removing the plastic package body from the molding tool.
Claim 21
Dependent Claim
39 words
The method of claim 14 wherein the step of providing a molding tool comprises providing a molding tool wherein the ion implanted surface includes an implant species implanted to a depth of at most two micron from the surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-31 | 2002-03-02 | 2002-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-31 | 2006-03-02 | 2006-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-31 | 2010-03-02 | 2010-09-01 | $7700.00 | Window Closed / Lapsed |