US5831378A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulative barrier useful in field emission displays for reducing surface leakage
Assignee: Micron Technology Inc
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Filing: 1997-08-25
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Granted: 1998-11-03
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Expires: 2017-08-25
Abstract
Abstract A field emitter display having reduced surface leakage comprising at least one emitter tip surrounded by a dielectric region. The dielectric region is formed of a composite of insulative layers, at least one of which has fins extending toward the emitter tip. A conductive gate, for extracting electrons from the emitter tip, is disposed superjacent the dielectric region. The fins increase the length of the path that leaked electrical charge travels before impacting the gate.
Inventors
- 👤 J. Brett Rolfson
- 👤 Kevin Tjaden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:23
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H01; H01J; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30403; H01J2201/30426; H01J2201/319; H01J2209/00; H01J2209/02; H01J2209/022; H01J2209/0223; H01J2209/0226
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
59 words
A field emitter display having reduced surface leakage, said field emitter display comprising: at least one emitter tip; a dielectric region surrounding said emitter tip, said dielectric region being formed of a composite of insulative layers, at least one of said insulative layers having fins extending toward said emitter tip; and a conductive gate disposed superjacent said dielectric region.
Claim 2
Dependent Claim
59 words
A field emitter display having reduced surface leakage, said field emitter display comprising: at least one emitter tip; a dielectric region surrounding said emitter tip, said dielectric region being formed of a composite of insulative layers, at least one of said insulative layers having fins extending toward said emitter tip; and a conductive gate disposed superjacent said dielectric region.
Claim 3
Dependent Claim
29 words
The field emitter device according to claim 1, wherein said composite of insulative layers comprises at least a first oxide layer, a nitride layer, and a second oxide layer.
Claim 4
Dependent Claim
32 words
The field emitter device according to claim 2, wherein said fins extend from said nitride layer, said fins being spaced a sufficient distance from said emitter tip to prevent interference with emission.
Claim 5
Dependent Claim
14 words
The field emitter device according to claim 3, wherein said conductive gate comprises polysilicon.
Claim 6
Dependent Claim
19 words
The field emitter device according to claim 4, wherein at least one of said oxide layers comprises tetraethylorthosilicate (TEOS).
Claim 7
Dependent Claim
21 words
The field emitter device according to claim 5, wherein said emitter tip is disposed in an array of like emitter tips.
Claim 8
Dependent Claim
29 words
The field emitter device according to claim 6, wherein said composite of insulative layers further comprises a second nitride layer, said second nitride layer having additional fins extending therefrom.
Claim 9
Dependent Claim
47 words
A field emitter device comprising: a substrate having an electron emitter thereon; a gate structure adjacent said electron emitter; and a dielectric region between said electron emitter and said gate structure, said dielectric region having an uneven surface extending between said electron emitter and said gate structure.
Claim 10
Dependent Claim
47 words
A field emitter device comprising: a substrate having an electron emitter thereon; a gate structure adjacent said electron emitter; and a dielectric region between said electron emitter and said gate structure, said dielectric region having an uneven surface extending between said electron emitter and said gate structure.
Claim 11
Dependent Claim
28 words
The device, as set forth in claim 8, wherein said electron emitter comprises a base portion and a tip portion, said base portion being coupled to said substrate.
Claim 12
Dependent Claim
22 words
The device, as set forth in claim 9, wherein said gate structure is disposed adjacent said tip portion of said electron emitter.
Claim 13
Dependent Claim
14 words
The device, as set forth in claim 8, wherein said gate structure comprises polysilicon.
Claim 14
Dependent Claim
45 words
The device, as set forth in claim 8, wherein said dielectric region comprises a plurality of dielectric layers, at least one of said plurality of dielectric layers extending toward said electron emitter to a greater extent than the other of said plurality of dielectric layers.
Claim 15
Dependent Claim
44 words
The device, as set forth in claim 8, wherein said dielectric region comprises a plurality of dielectric layers, a first plurality of said plurality of dielectric layers extending toward said electron emitter in comparison to a second plurality of said plurality of dielectric layers.
Claim 16
Dependent Claim
66 words
The device, as set forth in claim 8, wherein said dielectric region comprises a plurality of dielectric layers, at least one of said plurality of dielectric layers being spaced within a first distance from said electron emitter and the other of said plurality of dielectric layers being spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 17
Dependent Claim
67 words
The device, as set forth in claim 8, wherein said dielectric region comprises a plurality of dielectric layers, a first plurality of said plurality of dielectric layers being spaced within a first distance from said electron emitter and a second plurality of said plurality of dielectric layers being spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 18
Dependent Claim
61 words
A field emitter device comprising: a substrate having an electron emitter thereon; a gate structure adjacent and spaced apart from said electron emitter; and a dielectric region adjacent said electron emitter, said dielectric region being formed from a plurality of layers, at least one of said plurality of layers extending into a space between said dielectric region and said electron emitter.
Claim 19
Dependent Claim
61 words
A field emitter device comprising: a substrate having an electron emitter thereon; a gate structure adjacent and spaced apart from said electron emitter; and a dielectric region adjacent said electron emitter, said dielectric region being formed from a plurality of layers, at least one of said plurality of layers extending into a space between said dielectric region and said electron emitter.
Claim 20
Dependent Claim
28 words
The device, as set forth in claim 16, wherein said electron emitter comprises a base portion and a tip portion, said base portion being coupled to said substrate.
Claim 21
Dependent Claim
22 words
The device, as set forth in claim 17, wherein said gate structure is disposed adjacent said tip portion of said electron emitter.
Claim 22
Dependent Claim
14 words
The device, as set forth in claim 16, wherein said gate structure comprises polysilicon.
Claim 23
Dependent Claim
21 words
The device, as set forth in claim 16, wherein a first plurality of said plurality of layers extends into said space.
Claim 24
Dependent Claim
56 words
The device, as set forth in claim 16, wherein said at least one of said plurality of layers is spaced within a first distance from said electron emitter and the other of said plurality of layers is spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 25
Dependent Claim
56 words
The device, as set forth in claim 16, wherein a first plurality of said plurality of layers is spaced within a first distance from said electron emitter and a second plurality of said plurality of layers is spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 26
Dependent Claim
71 words
A field emitter device comprising: a substrate having an electron emitter thereon, said electron emitter having a base portion and a tip portion; a gate structure surrounding said tip portion of said electron emitter; and a dielectric region surrounding said base portion of said electron emitter, said dielectric region being formed from a plurality of layers, said plurality of layers being nonuniformly spaced from said base portion of said electron emitter.
Claim 27
Dependent Claim
71 words
A field emitter device comprising: a substrate having an electron emitter thereon, said electron emitter having a base portion and a tip portion; a gate structure surrounding said tip portion of said electron emitter; and a dielectric region surrounding said base portion of said electron emitter, said dielectric region being formed from a plurality of layers, said plurality of layers being nonuniformly spaced from said base portion of said electron emitter.
Claim 28
Dependent Claim
14 words
The device, as set forth in claim 23, wherein said gate structure comprises polysilicon.
Claim 29
Dependent Claim
38 words
The device, as set forth in claim 23, wherein at least one of said plurality of layers extends toward said base portion of said electron emitter to a greater extend than the other of said plurality of layers.
Claim 30
Dependent Claim
39 words
The device, as set forth in claim 23, wherein a first plurality of said plurality of layers extends toward said base portion of said electron emitter to a greater extend than a second plurality of said plurality of layers.
Claim 31
Dependent Claim
56 words
The device, as set forth in claim 23, wherein said at least one of said plurality of layers is spaced within a first distance from said electron emitter and the other of said plurality of layers is spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 32
Dependent Claim
56 words
The device, as set forth in claim 23, wherein a first plurality of said plurality of layers is spaced within a first distance from said electron emitter and a second plurality of said plurality of layers is spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 33
Dependent Claim
74 words
A field emitter device comprising: a substrate having an electron emitter extending therefrom, said electron emitter having a base portion and a tip portion, said base portion being coupled to said substrate; a dielectric region surrounding said base portion of said electron emitter, said dielectric region being disposed on said substrate, said dielectric region having a protrusion extending toward said electron emitter; and a gate structure adjacent said tip portion of said electron emitter.
Claim 34
Dependent Claim
74 words
A field emitter device comprising: a substrate having an electron emitter extending therefrom, said electron emitter having a base portion and a tip portion, said base portion being coupled to said substrate; a dielectric region surrounding said base portion of said electron emitter, said dielectric region being disposed on said substrate, said dielectric region having a protrusion extending toward said electron emitter; and a gate structure adjacent said tip portion of said electron emitter.
Claim 35
Dependent Claim
14 words
The device, as set forth in claim 29, wherein said gate structure comprises polysilicon.
Claim 36
Dependent Claim
45 words
The device, as set forth in claim 29, wherein said dielectric region comprises a plurality of dielectric layers, at least one of said plurality of dielectric layers extending toward said electron emitter to a greater extent than the other of said plurality of dielectric layers.
Claim 37
Dependent Claim
44 words
The device, as set forth in claim 29, wherein said dielectric region comprises a plurality of dielectric layers, a first plurality of said plurality of dielectric layers extending toward said electron emitter in comparison to a second plurality of said plurality of dielectric layers.
Claim 38
Dependent Claim
66 words
The device, as set forth in claim 29, wherein said dielectric region comprises a plurality of dielectric layers, at least one of said plurality of dielectric layers being spaced within a first distance from said electron emitter and the other of said plurality of dielectric layers being spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 39
Dependent Claim
67 words
The device, as set forth in claim 29, wherein said dielectric region comprises a plurality of dielectric layers, a first plurality of said plurality of dielectric layers being spaced within a first distance from said electron emitter and a second plurality of said plurality of dielectric layers being spaced at least a second distance from said electron emitter, said first distance being less than said second distance.
Claim 40
Dependent Claim
80 words
A field emitter device comprising: a substrate having an electron emitter thereon; a first dielectric region adjacent said electron emitter, said first dielectric region being spaced apart from said electron emitter by a first distance; a second dielectric region adjacent said first dielectric region, said second dielectric region being spaced apart from said electron emitter by a second distance, said second distance being greater than said first distance; and a gate structure adjacent and spaced apart from said electron emitter.
Claim 41
Dependent Claim
80 words
A field emitter device comprising: a substrate having an electron emitter thereon; a first dielectric region adjacent said electron emitter, said first dielectric region being spaced apart from said electron emitter by a first distance; a second dielectric region adjacent said first dielectric region, said second dielectric region being spaced apart from said electron emitter by a second distance, said second distance being greater than said first distance; and a gate structure adjacent and spaced apart from said electron emitter.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-02 | 2002-05-04 | 2002-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-02 | 2006-05-04 | 2006-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-02 | 2010-05-04 | 2010-11-03 | $7700.00 | Window Closed / Lapsed |