US5836772A
Expired / Lapsed
US
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Interpoly dielectric process
Assignee: Macronix International Co Ltd
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Filing: 1997-03-31
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Granted: 1998-11-17
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Expires: 2017-03-31
Abstract
Abstract A process is provided for fabricating a nonvolatile memory cell. According to the process, source and drain regions are formed on a first conductivity-type semiconductor substrate; and insulating layer is formed on the source and drain regions; a floating gate is formed on the insulating layer; a dielectric composite is formed on the floating gate; and a control gate is formed on the dielectric composite. The dielectric composite includes a bottom layer of silicon dioxide formed on the floating gate; a layer of silicon nitride formed on the bottom silicon dioxide layer; and a top layer of silicon dioxide formed on the nitride layer such that the silicon nitride layer of the composite is thinner than the top or the bottom silicon dioxide layer.
Inventors
- 👤 Yun Chang
- 👤 Fuchia Shone
- 👤 Chin-Yi Huang
- 👤 Nai chen Peng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D64/01; H10D64/031; H10D64/035; H10D64/681
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
130 words
A process for fabricating a nonvolatile memory cell comprising: a) forming source and drain regions on a first conductivity-type semiconductor substrate; b) forming an insulating layer on said source and drain regions; c) forming a floating gate positioned on said insulating layer; d) forming a dielectric composite positioned on said floating gate, said dielectric composite including a bottom layer of silicon dioxide formed on said floating gate; a layer of silicon nitride formed on said bottom silicon dioxide layer, and a top layer of silicon dioxide formed on said nitride layer, wherein said silicon nitride layer of said composite has a thickness less than about 80 Å and is thinner than said top or said bottom silicon dioxide layer; and e) forming a control gate positioned on said dielectric composite.
Claim 2
Dependent Claim
130 words
A process for fabricating a nonvolatile memory cell comprising: a) forming source and drain regions on a first conductivity-type semiconductor substrate; b) forming an insulating layer on said source and drain regions; c) forming a floating gate positioned on said insulating layer; d) forming a dielectric composite positioned on said floating gate, said dielectric composite including a bottom layer of silicon dioxide formed on said floating gate; a layer of silicon nitride formed on said bottom silicon dioxide layer, and a top layer of silicon dioxide formed on said nitride layer, wherein said silicon nitride layer of said composite has a thickness less than about 80 Å and is thinner than said top or said bottom silicon dioxide layer; and e) forming a control gate positioned on said dielectric composite.
Claim 3
Dependent Claim
29 words
A process for fabricating a nonvolatile memory cell according to claim 1 wherein said silicon nitride layer contains pinholes plugged with oxygen to prevent charge leakage through said pinholes.
Claim 4
Dependent Claim
29 words
A nonvolatile memory cell according to claim 1 wherein the capacitively measured effective oxide thickness of said dielectric insulating composite is equal to or less than about 180 Å.
Claim 5
Dependent Claim
28 words
A process for fabricating a nonvolatile memory cell according to claim 1 wherein said bottom and top silicon dioxide layers are formed by high temperature chemical vapor deposition.
Claim 6
Dependent Claim
42 words
A process for fabricating a nonvolatile memory cell according to claim 1 wherein said bottom silicon dioxide layer has a thickness between about 25 and 80 Å and said top silicon dioxide layer having a thickness between about 40 and 100 Å.
Claim 7
Dependent Claim
33 words
A process for fabricating a nonvolatile memory cell according to claim 5 wherein the capacitively measured effective oxide thickness of said dielectric insulating composite is equal to or less than about 180 Å.
Claim 8
Dependent Claim
29 words
A process for fabricating a nonvolatile memory cell according to claim 5 wherein said silicon nitride layer contains pinholes plugged with oxygen to prevent charge leakage through said pinholes.
Claim 9
Dependent Claim
25 words
A process for fabricating a nonvolatile memory cell according to claim 1 said cell further comprising a layer of tungsten positioned on said control gate.
Claim 10
Dependent Claim
91 words
A process for fabricating a nonvolatile memory cell comprising: a) forming source and drain regions on a first conductivity-type semiconductor substrate; b) forming an insulating layer on said source and drain regions; c) forming a floating gate positioned on said insulating layer; d) forming a dielectric insulator positioned on said floating gate, said dielectric insulator including a first silicon dioxide layer and a second silicon dioxide layer formed by high temperature chemical vapor deposition on said first silicon dioxide layer; and e) forming a control gate positioned on said dielectric composite.
Claim 11
Dependent Claim
91 words
A process for fabricating a nonvolatile memory cell comprising: a) forming source and drain regions on a first conductivity-type semiconductor substrate; b) forming an insulating layer on said source and drain regions; c) forming a floating gate positioned on said insulating layer; d) forming a dielectric insulator positioned on said floating gate, said dielectric insulator including a first silicon dioxide layer and a second silicon dioxide layer formed by high temperature chemical vapor deposition on said first silicon dioxide layer; and e) forming a control gate positioned on said dielectric composite.
Claim 12
Dependent Claim
30 words
A process for fabricating a nonvolatile memory cell according to claim 9 wherein said first silicon dioxide layer is formed by thermal growth in the presence of N 2 O.
Claim 13
Dependent Claim
113 words
A process for fabricating a nonvolatile memory cell comprising: a) forming source and drain regions on a first conductivity-type semiconductor substrate; b) forming an insulating layer on said source and drain regions; c) forming a floating gate positioned on said insulating layer; d) forming a dielectric insulator positioned on said floating gate, said dielectric insulator including a bottom layer of silicon dioxide having pinholes and a top layer of silicon dioxide having pinholes, the top layer being formed on said bottom layer of silicon dioxide such that pinholes in said bottom layer are not in alignment with pinholes in said top layer; and e) forming a control gate positioned on said dielectric composite.
Claim 14
Dependent Claim
113 words
A process for fabricating a nonvolatile memory cell comprising: a) forming source and drain regions on a first conductivity-type semiconductor substrate; b) forming an insulating layer on said source and drain regions; c) forming a floating gate positioned on said insulating layer; d) forming a dielectric insulator positioned on said floating gate, said dielectric insulator including a bottom layer of silicon dioxide having pinholes and a top layer of silicon dioxide having pinholes, the top layer being formed on said bottom layer of silicon dioxide such that pinholes in said bottom layer are not in alignment with pinholes in said top layer; and e) forming a control gate positioned on said dielectric composite.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-16 | 2002-05-18 | 2002-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-16 | 2006-05-18 | 2006-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-16 | 2010-05-18 | 2010-11-17 | $7700.00 | Window Closed / Lapsed |