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US5874766A
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Semiconductor device having an oxynitride film
Assignee: RPX Corp
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Filing: 1995-04-21
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Granted: 1999-02-23
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Expires: 2015-04-21
Abstract
Abstract A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a oxynitride film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10 6 .6-T.sbsb.N /225 seconds or shorter wherein T N is the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxynitride film and the substrate. Also disclosed is a method for the production of the semiconductor device.
Inventors
- 👤 Takashi Hori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
105 words
A semiconductor device comprising: a semiconductor substrate; a gate insulating film formed on a surface of the semiconductor substrate; a gate electrode formed on a surface of the gate insulating film; and a source region and a drain region formed in the semiconductor substrate, wherein the gate insulating film is a single-layer oxynitride film including nitrogen from a top surface thereof contacting the gate electrode to a bottom surface thereof contacting the semiconductor substrate, the gate insulating film being provided through a nitridation process by heating a thermal oxide film formed on the semiconductor substrate in an ammonia atmosphere for a short period of time.
Claim 2
Dependent Claim
105 words
A semiconductor device comprising: a semiconductor substrate; a gate insulating film formed on a surface of the semiconductor substrate; a gate electrode formed on a surface of the gate insulating film; and a source region and a drain region formed in the semiconductor substrate, wherein the gate insulating film is a single-layer oxynitride film including nitrogen from a top surface thereof contacting the gate electrode to a bottom surface thereof contacting the semiconductor substrate, the gate insulating film being provided through a nitridation process by heating a thermal oxide film formed on the semiconductor substrate in an ammonia atmosphere for a short period of time.
Claim 3
Dependent Claim
43 words
A semiconductor device according to claim 1, wherein a nitrogen concentration of the single-layer oxynitride film in a thickness direction thereof is higher at the vicinity of the bottom surface and at the vicinity of the top surface than at a center portion.
Claim 4
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein the single-layer oxynitride film is provided at least over the source region and the drain region positioned on sides of the gate electrode.
Claim 5
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein the single-layer oxynitride film is provided over the source region and the drain region except for a portion where a contact hole is provided.
Claim 6
Dependent Claim
46 words
A semiconductor device according to claim 1, wherein an interlayer insulating film is further provided over the source region and the drain region with the single-layer oxynitride film interposed therebetween, and a contact hole is provided in the interlayer insulating film and the single-layer oxynitride film.
Claim 7
Dependent Claim
18 words
A semiconductor device according to claim 1, further comprising an isolation insulating film formed on the semiconductor substrate.
Claim 8
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein the semiconductor substrate is made of silicon.
Claim 9
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein the gate electrode is made of polysilicon.
References Cited (Backward Citations)
US4416952A
Cited
EP0006706A1
Cited
US4621277A
Cited
US4282270A
Cited
US4343657A
Cited
WO1986003621A1
Cited
JPS6233469A
Cited
JPS62293728A
Cited
US5198392A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-02-22 | 2002-08-24 | 2003-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-22 | 2006-08-24 | 2007-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-22 | 2010-08-24 | 2011-02-23 | $7700.00 | Window Closed / Lapsed |