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US5892283A Expired / Lapsed US ⏱️ 0.0 years remaining

Connection of active circuitry via wire bonding procedure

Assignee: Texas Instruments Inc
•
Filing: 1997-12-16
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Granted: 1999-04-06
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Expires: 2017-12-16
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Abstract

Abstract A method of fabricating a bond and the bond. The process includes providing a lower level (M1,13, 15) of electrically conductive metal disposed on a substrate having a pair of spaced apart sections. An electrically insulating layer (11) is then disposed over the lower level and vias (23) are formed in the electrically insulating layer, individual ones of the vias extending to one of the spaced apart section of the lower level. An upper level of electrically conductive metal (M2, 17, 19) is disposed on the electrically insulating layer, the upper level having a pair of spaced apart sections, each coupled to one of the sections of the lower level through a via. One of the pair of spaced apart sections of the lower level is preferably essentially U-shaped (13) and the other section (15) of the lower level is essentially rectangular shaped and extends into the open end of the "U". One of the pair of spaced apart section of the upper level is essentially rectangular (17) with a rectangular aperture at its central region and the other section of the upper level (19) is essentially rectangular and disposed within the rectangular aperture. A bond (23) is formed completely enclosing the spaced apart sections of the upper level.

Inventors

  • 👤 David John Baldwin
  • 👤 Ross E. Teggatz

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 07:53
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/27; H10P74/273; H10W; H10W72/00; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W72/952

Claims Analysis

Total Claims: 20
Claim 1
Independent Claim 98 words
A bond for a semiconductor device which comprises: (a) a first region of electrically conductive metal disposed on a semiconductor chip, said first region having a pair of spaced apart sections; (b) a second region of electrically conductive metal, said second region having a pair of spaced apart sections, each of said spaced apart sections of said second region being coupled to a different one of said sections of said first region; (c) an electrically insulating layer disposed between said first and second regions; and (d) a bond completely enclosing said spaced apart sections of said first region.
Claim 2
Dependent Claim 98 words
A bond for a semiconductor device which comprises: (a) a first region of electrically conductive metal disposed on a semiconductor chip, said first region having a pair of spaced apart sections; (b) a second region of electrically conductive metal, said second region having a pair of spaced apart sections, each of said spaced apart sections of said second region being coupled to a different one of said sections of said first region; (c) an electrically insulating layer disposed between said first and second regions; and (d) a bond completely enclosing said spaced apart sections of said first region.
Claim 3
Dependent Claim 56 words
The bond of claim 1 wherein said first region is an upper level and said second region is a lower level and said electrically insulating layer is disposed over said second region and has vias therein, each said via extending from a said region of said first section to a said region of said second section.
Claim 4
Dependent Claim 27 words
The bond of claim 2 wherein one of said spaced apart sections of said upper level is completely surrounded by the other section of said upper level.
Claim 5
Dependent Claim 42 words
The bond of claim 2 wherein one of said pair of spaced apart sections of said lower level is essentially U-shaped and the other section of said lower level is essentially rectangular shaped and extends into the open end of said "U".
Claim 6
Dependent Claim 42 words
The bond of claim 3 wherein one of said pair of spaced apart sections of said lower level is essentially U-shaped and the other section of said lower level is essentially rectangular shaped and extends into the open end of said "U".
Claim 7
Dependent Claim 46 words
The bond of claim 2 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.
Claim 8
Dependent Claim 46 words
The bond of claim 3 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.
Claim 9
Dependent Claim 46 words
The bond of claim 4 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.
Claim 10
Dependent Claim 46 words
The bond of claim 5 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.
Claim 11
Independent Claim 109 words
A method of fabricating a bond which comprises the steps of: (a) providing a substrate; (b) providing a first region of electrically conductive metal disposed on a semiconductor chip, said first region having a pair of spaced apart sections; (b) providing a second region of electrically conductive metal, said second region having a pair of spaced apart sections, each of said spaced apart sections of said second region being coupled to a different one of said sections of said first region; (c) providing an electrically insulating layer disposed between said first and second regions; and (d) forming a bond completely enclosing said spaced apart sections of said first region.
Claim 12
Independent Claim 109 words
A method of fabricating a bond which comprises the steps of: (a) providing a substrate; (b) providing a first region of electrically conductive metal disposed on a semiconductor chip, said first region having a pair of spaced apart sections; (b) providing a second region of electrically conductive metal, said second region having a pair of spaced apart sections, each of said spaced apart sections of said second region being coupled to a different one of said sections of said first region; (c) providing an electrically insulating layer disposed between said first and second regions; and (d) forming a bond completely enclosing said spaced apart sections of said first region.
Claim 13
Dependent Claim 61 words
The method of claim 10 wherein said first region is an upper level and said second region is a lower level and said electrically insulating layer is disposed over said second region and further providing vias in said electrically insulating layer, each said via extending from a said region of said first section to a said region of said second section.
Claim 14
Dependent Claim 27 words
The method of claim 11 wherein one of said spaced apart sections of said upper level is completely surrounded by the other section of said upper level.
Claim 15
Dependent Claim 42 words
The method of claim 11 wherein one of said pair of spaced apart sections of said lower level is essentially U-shaped and the other section of said lower level is essentially rectangular shaped and extends into the open end of said "U".
Claim 16
Dependent Claim 42 words
The method of claim 12 wherein one of said pair of spaced apart sections of said lower level is essentially U-shaped and the other section of said lower level is essentially rectangular shaped and extends into the open end of said "U".
Claim 17
Dependent Claim 46 words
The method of claim 11 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.
Claim 18
Dependent Claim 46 words
The method of claim 12 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.
Claim 19
Dependent Claim 46 words
The method of claim 13 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.
Claim 20
Dependent Claim 47 words
The bond pad of claim 14 wherein one of said pair of spaced apart section of said upper level is essentially rectangular with a rectangular aperture at its central region and the other section of said upper level is essentially rectangular and disposed within said rectangular aperture.

References Cited (Backward Citations)

GB2004417A Cited
EP0166112A2 Cited
JPH01217976A Cited
US5010389A Cited
US5742094A Cited
US5381105A Cited
US5451810A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-04-05 2002-10-05 2003-04-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-04-05 2006-10-05 2007-04-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-04-05 2010-10-05 2011-04-06 $7700.00 Window Closed / Lapsed

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