Patent US5895263A successfully refreshed from Google Patents.
US5895263A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacture of integrated circuit device
Assignee: International Business Machines Corp
•
Filing: 1996-12-19
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Granted: 1999-04-20
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Expires: 2016-12-19
Abstract
Abstract The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
Inventors
- 👤 Kenneth Raymond Carter
- 👤 Daniel Joseph Dawson
- 👤 Richard Anthony DiPietro
- 👤 Craig Jon Hawker
- 👤 James Lupton Hedrick
- 👤 Robert Dennis Miller
- 👤 Do Yeung Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/40; H10W20/45; H10W20/46; H10P14/63; H10P14/6326; H10P14/6342; H10P14/665; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
71 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising decomposable polymer and organic polysilica; (b) heating the composition to condense the polysilica; (c) decomposing the decomposable polymer to form a porous dielectric layer; (d) lithographically patterning the dielectric layer; (e) depositing a metallic film onto the patterned dielectric layer; and (f) planarizing the film to form the integrated circuit.
Claim 2
Dependent Claim
71 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising decomposable polymer and organic polysilica; (b) heating the composition to condense the polysilica; (c) decomposing the decomposable polymer to form a porous dielectric layer; (d) lithographically patterning the dielectric layer; (e) depositing a metallic film onto the patterned dielectric layer; and (f) planarizing the film to form the integrated circuit.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein the decomposable polymer is decomposed by heating or exposure to radiation.
Claim 4
Dependent Claim
11 words
The process of claim 2 wherein the organic polysilica is silsesquioxane.
Claim 5
Dependent Claim
11 words
The process of claim 3 wherein the silsesquioxane is alkyl/phenyl silsesquioxane.
Claim 6
Dependent Claim
21 words
The process of claim 2 wherein the decomposable polymer is a linear polymer selected from polyester, polystyrene, poly(α-methylstyrene) polyacrylate or polymethacrylate.
Claim 7
Dependent Claim
14 words
The process of claim 2 wherein the decomposable polymer is a crosslinked polymeric nanosphere.
Claim 8
Dependent Claim
12 words
The process of claim 2 wherein the decomposable polymer is hyperbranched polymer.
Claim 9
Dependent Claim
11 words
The process of claim 7 wherein the hyperbranched polymer is polyester.
Claim 10
Dependent Claim
61 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film, a layer of a dielectric composition comprising decomposable polymer and organic polysilica; (d) heating the composition to condense the polysilica; and (e) decomposing the decomposable polymer to form a porous dielectric layer.
Claim 11
Dependent Claim
61 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film, a layer of a dielectric composition comprising decomposable polymer and organic polysilica; (d) heating the composition to condense the polysilica; and (e) decomposing the decomposable polymer to form a porous dielectric layer.
Claim 12
Dependent Claim
17 words
The process of claim 9 wherein the decomposable polymer is decomposed by heating or exposure to radiation.
Claim 13
Dependent Claim
11 words
The process of claim 10 wherein the organic polysilica is silsesquioxane.
Claim 14
Dependent Claim
11 words
The process of claim 11 wherein the silsesquioxane is alkyl/phenyl silsesquioxane.
Claim 15
Dependent Claim
21 words
A process of claim 10 wherein the decomposable polymer is a linear polymer selected from polyester, polystyrene, poly(α-methylstyrene), polyacrylate or polymethacrylate.
Claim 16
Dependent Claim
14 words
The process of claim 10 wherein the decomposable polymer is a crosslinked polymeric nanosphere.
Claim 17
Dependent Claim
12 words
The process of claim 10 wherein the decomposable polymer is hyperbranched polymer.
Claim 18
Dependent Claim
11 words
The process of claim 15 wherein the hyperbranched polymer is polyester.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-19 | 2002-10-19 | 2003-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-19 | 2006-10-19 | 2007-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-19 | 2010-10-19 | 2011-04-20 | $7700.00 | Window Closed / Lapsed |