US5969397A
Expired / Lapsed
US
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Low defect density composite dielectric
Assignee: Texas Instruments Inc
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Filing: 1997-11-19
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Granted: 1999-10-19
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Expires: 2017-11-19
Abstract
Abstract A composite dielectric layer (102). A first layer (112) of the composite dielectric layer (102) has a small to no nitrogen concentration. A second layer (114) of the composite dielectric layer (102) has a larger nitrogen concentration (e.g., 5-15%). The composite dielectric layer (102) may be used as a thin gate dielectric wherein the second layer (114) is located adjacent a doped gate electrode (110) and has sufficient nitrogen concentration to stop penetration of dopant from the gate electrode (110) to the channel region (108). The first layer (112) is located between the second layer (114) and the channel region (108). The low nitrogen concentration of the first layer (112) is limited so as to not interfere with carrier mobility in the channel region (108).
Inventors
- 👤 Douglas Ticknor Grider, III
- 👤 Paul Edward Nicollian
- 👤 Steve Hsia
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 07:16
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
45 words
A composite dielectric layer comprising: a first dielectric layer having a nitrogen content less than 1%; and a second dielectric layer having a nitrogen content sufficient to block penetration of dopants; wherein said second dielectric layer has a thickness on the order of 10-20 Å.
Claim 2
Dependent Claim
45 words
A composite dielectric layer comprising: a first dielectric layer having a nitrogen content less than 1%; and a second dielectric layer having a nitrogen content sufficient to block penetration of dopants; wherein said second dielectric layer has a thickness on the order of 10-20 Å.
Claim 3
Dependent Claim
32 words
The composite dielectric layer of claim 1, wherein said first dielectric layer is located adjacent a channel region of a transistor and said second dielectric layer is spaced from said channel region.
Claim 4
Dependent Claim
15 words
The composite dielectric layer of claim 1, wherein said first dielectric layer comprises silicon dioxide.
Claim 5
Dependent Claim
16 words
The composite dielectric layer of claim 1, wherein said second dielectric layer comprises a nitrogen-doped oxide.
Claim 6
Dependent Claim
15 words
The composite dielectric layer of claim 1, wherein said second dielectric layer comprises an oxynitride.
Claim 7
Dependent Claim
21 words
The composite dielectric layer of claim 1, wherein said first dielectric layer has a thickness on the order of 15-25 Å.
Claim 8
Dependent Claim
21 words
The composite dielectric layer of claim 1, wherein said second dielectric layer has a nitrogen concentration in the range of 5-15%.
Claim 9
Dependent Claim
41 words
The composite dielectric layer of claim 1, wherein said first dielectric layer is located between a first polysilicon layer and said second dielectric layer and said second dielectric layer is located between said first dielectric layer and a second polysilicon layer.
Claim 10
Dependent Claim
26 words
The composite dielectric layer of claim 1, wherein said first dielectric layer and second dielectric layer are located between first and second plates of a capacitor.
Claim 11
Dependent Claim
128 words
A MOSFET transistor, comprising: a source region located in a semiconductor body; a drain region located in said semiconductor body; a channel region located between said source region and said drain region in said semiconductor body; a doped gate electrode disposed over said channel region; and a gate dielectric disposed between said doped gate electrode and said channel region, said gate dielectric comprising: a first layer located adjacent said channel region and having a sufficiently small nitrogen concentration such that carrier mobility in said channel region is not influenced; and a second layer located adjacent said gate electrode and having a nitrogen concentration sufficient to block the penetration of dopants from said doped gate electrode, wherein said second layer has a thickness on the order of 10-20 Å.
Claim 12
Dependent Claim
128 words
A MOSFET transistor, comprising: a source region located in a semiconductor body; a drain region located in said semiconductor body; a channel region located between said source region and said drain region in said semiconductor body; a doped gate electrode disposed over said channel region; and a gate dielectric disposed between said doped gate electrode and said channel region, said gate dielectric comprising: a first layer located adjacent said channel region and having a sufficiently small nitrogen concentration such that carrier mobility in said channel region is not influenced; and a second layer located adjacent said gate electrode and having a nitrogen concentration sufficient to block the penetration of dopants from said doped gate electrode, wherein said second layer has a thickness on the order of 10-20 Å.
Claim 13
Dependent Claim
17 words
The transistor of claim 10, wherein said first layer contains a nitrogen concentration between 0 and 1%.
Claim 14
Dependent Claim
17 words
The transistor of claim 10, wherein said second layer has a nitrogen concentration between 5 and 15%.
Claim 15
Dependent Claim
14 words
The transistor of claim 10, wherein said doped gate electrode is doped with boron.
Claim 16
Dependent Claim
12 words
The transistor of claim 10, wherein said first layer comprises silicon dioxide.
Claim 17
Dependent Claim
13 words
The transistor of claim 10, wherein said second layer comprises a nitrogen-doped oxide.
Claim 18
Dependent Claim
12 words
The transistor of claim 10, wherein said second layer comprises an oxynitride.
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