Semiconductor memory device with high voltage generation circuit

Claim 2

A semiconductor memory device comprising: a memory cell formed on a semiconductor substrate, the memory cell including a charge accumulated portion and a control gate provided above the charge accumulated portion, wherein data programming and erasing in the memory cell is performed by transferring electric charge in the charge accumulated portion; a boosting circuit for boosting an external power supply voltage: a pulse generating circuit for generating first and second pulse signals with first and second amplitudes, respectively, the second amplitude being greater than the first amplitude, the pulse generating circuit including a voltage converting circuit which is supplied with a boosted voltage outputted from the boosting circuit, the voltage converting circuit generating the second pulse signal: and a voltage generating circuit for generating a control voltage to be applied to the memory cell, wherein the voltage generating circuit comprises: a first MOS transistor having a drain connected to a first node, a gate connected to a second node, and a source connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive the first pulse signal; a second MOS transistor having a drain connected to the first node, a gate connected to the third node, and a source connected to the second node; and a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive the second pulse signal, wherein the first pulse signal is set at substantially the same level as the external power supply voltage, and the second pulse signal is set at substantially the same level as the boosted voltage outputted from the boosting circuit.

Claim 3

A semiconductor memory device comprising: a memory cell formed on a semiconductor substrate, the memory cell including a charge accumulated portion and a control gate provided above the charge accumulated portion, wherein data programming and erasing in the memory cell is performed by transferring electric charge in the charge accumulated portion; a boosting circuit for boosting an external power supply voltage; a pulse generating circuit for generating first and second pulse signals with first and second amplitudes, respectively, the second amplitude being greater than the first amplitude, the pulse generating circuit including a voltage converting circuit which is supplied with a boosted voltage outputted from the boosting circuit, the voltage converting circuit generating the second pulse signal; and a negative voltage generating circuit for generating a control voltage to be applied to at least the control gate of the memory cell, wherein the negative voltage generating circuit comprises: a first P-channel MOS transistor having a drain connected to a first node, a gate connected to a second node, and a source connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive the first pulse signal; a second P-channel MOS transistor having a drain connected to the first node, a gate connected to the third node, and a source connected to the second node; and a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive the second pulse signal, wherein the first pulse signal is set at substantially the same level as the external power supply voltage, and the second pulse signal is set at substantially the same level as the boosted voltage outputted from the boosting circuit.

Claim 4

A semiconductor memory device comprising: a memory cell formed on a semiconductor substrate, the memory cell including a charge accumulated portion and a control gate provided above the charge accumulated portion, wherein data programming and erasing in the memory cell is performed by transferring electric charge in the charge accumulated portion; a boosting circuit for boosting an external power supply voltage; a pulse generating circuit for generating first and second pulse signals with first and second amplitudes, respectively, the second amplitude being greater than the first amplitude, the pulse generating circuit including a voltage converting circuit which is supplied with a boosted voltage outputted from the boosting circuit, the voltage converting circuit generating the second pulse signal; and a negative voltage generating circuit for generating a control voltage to be applied to at least the control gate of the memory cell, wherein the negative voltage generating circuit comprises: a first P-channel MOS transistor having a drain connected to a first node, a gate connected to a second node, and a source connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive the first pulse signal; a second P-channel MOS transistor having a drain connected to the first node, a gate connected to the third node, and a source connected to the second node; and a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive the second pulse signal, wherein the first pulse signal is set at substantially the same level as the external power supply voltage, and the second pulse signal is set at substantially the same level as the boosted voltage outputted from the boosting circuit.

Claim 5

The semiconductor memory device according to claim 2, wherein the second pulse signal is set at substantially the same level as a source potential of the memory cell during data erasing.

Claim 6

The semiconductor memory device according to claim 2, wherein the negative voltage generating circuit further comprises: a third P-channel MOS transistor having a drain connected to the third node, a gate connected to a fourth node, and a source connected to a fifth node; a third capacitive element having a first electrode connected to the third node, and a second electrode disposed to receive a third pulse signal which differs from the first pulse signal applied to the first capacitive element; a fourth P-channel MOS transistor having a drain connected to the third node, a gate connected to the fifth node, and a source connected to the fourth node; and a fourth capacitive element having a first electrode connected to the fourth node, and a second electrode disposed to receive a fourth pulse signal which differs from the second pulse signal applied to the second capacitive element.

Claim 7

The semiconductor memory device according to claim 4, wherein the third pulse signal applied to the third capacitive element has substantially the same level as the first pulse signal applied to the first capacitive element, and the fourth pulse signal applied to the fourth capacitive element has substantially the same level as the second pulse signal applied to the second capacitive element.

Claim 8

A semiconductor memory device comprising: a memory cell formed on a semiconductor substrate, the memory cell including a charge accumulated portion and a control gate provided above the charge accumulated portion, wherein data programming and erasing in the memory cell is performed by transferring electric charge in the charge accumulated portion; a boosting circuit for boosting an external power supply voltage; a pulse generating circuit for generating first and second pulse signals with first and second amplitudes, respectively, the second amplitude being greater than the first amplitude, the pulse generating circuit including a voltage converting circuit which is supplied with a boosted voltage outputted from the boosting circuit, the voltage converting circuit generating the second pulse signal; and a positive voltage generating circuit for generating a control voltage to be applied to at least the control gate of the memory cell, wherein the positive voltage generating circuit comprises: a first N-channel MOS transistor having a drain connected to a first node, a gate connected to a second node, and a source connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive the first pulse signal; a second N-channel MOS transistor having a drain connected to the first node, a gate connected to the third node, and a source connected to the second node; and a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive the second pulse signal, wherein the first pulse signal is set at substantially the same level as the external power supply voltage, and the second pulse signal is set at substantially the same level as a boosted voltage outputted from the boosting circuit.

Claim 9

A semiconductor memory device comprising: a memory cell formed on a semiconductor substrate, the memory cell including a charge accumulated portion and a control gate provided above the charge accumulated portion, wherein data programming and erasing in the memory cell is performed by transferring electric charge in the charge accumulated portion; a boosting circuit for boosting an external power supply voltage; a pulse generating circuit for generating first and second pulse signals with first and second amplitudes, respectively, the second amplitude being greater than the first amplitude, the pulse generating circuit including a voltage converting circuit which is supplied with a boosted voltage outputted from the boosting circuit, the voltage converting circuit generating the second pulse signal; and a positive voltage generating circuit for generating a control voltage to be applied to at least the control gate of the memory cell, wherein the positive voltage generating circuit comprises: a first N-channel MOS transistor having a drain connected to a first node, a gate connected to a second node, and a source connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive the first pulse signal; a second N-channel MOS transistor having a drain connected to the first node, a gate connected to the third node, and a source connected to the second node; and a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive the second pulse signal, wherein the first pulse signal is set at substantially the same level as the external power supply voltage, and the second pulse signal is set at substantially the same level as a boosted voltage outputted from the boosting circuit.

Claim 10

A voltage generating circuit comprising: a first MOS transistor having a drain connected to a first node, a gate connected to a second node, and a source connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive a first pulse signal with a first amplitude; a second MOS transistor having the same conductivity as the first MOS transistor, and having a drain connected to the first node, a gate directly connected to the third node, and a source directly connected to the second node; a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive a second pulse signal with a second amplitude greater than the first amplitude; and a boosting circuit for boosting an external power supply voltage, and wherein the first pulse signal is set at substantially the same level as the external power supply voltage, and the second pulse signal is set at substantially the same level as a boosted voltage outputted from the boosting circuit.

Claim 11

A voltage generating circuit comprising: a first MOS transistor having a drain connected to a first node, a gate connected to a second node, and a source connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive a first pulse signal with a first amplitude; a second MOS transistor having the same conductivity as the first MOS transistor, and having a drain connected to the first node, a gate directly connected to the third node, and a source directly connected to the second node; a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive a second pulse signal with a second amplitude greater than the first amplitude; and a boosting circuit for boosting an external power supply voltage, and wherein the first pulse signal is set at substantially the same level as the external power supply voltage, and the second pulse signal is set at substantially the same level as a boosted voltage outputted from the boosting circuit.

Claim 12

A semiconductor memory device comprising: a memory cell formed on a semiconductor substrate, the memory cell including a charge accumulated portion and a control gate provided above the charge accumulated portion, wherein data programming and erasing in the memory cell is performed by transferring electric charge in the charge accumulated portion; a boosting circuit for boosting an external power supply voltage; a pulse generating circuit for generating first and third pulse signals with a first amplitude and second and fourth pulse signals with a second amplitude, the second amplitude being greater than the first amplitude, the pulse generating circuit including a voltage converting circuit which is supplied with a boosted voltage outputted from the boosting circuit, the voltage converting circuit generating the second and fourth pulse signals; and a voltage generating circuit for generating a control voltage to be applied to the memory cell, wherein the voltage generating circuit comprises: a first MOS transistor having a first end of a current path connected to a first node, a gate connected to a second node, and a second end of the current path connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive the first pulse signal; a second MOS transistor having a first end of a current path connected to the first node, a gate connected to the third node, and a second end of the current path connected to the second node; a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive the second pulse signal; a third MOS transistor having a first end of a current path connected to the third node, a gate connected to a fourth node, and a second end of the current path connected to a fifth node; a third capacitive element having a first electrode connected to the third node, and a second electrode disposed to receive the third pulse signal; a fourth MOS transistor having a first end of a current path connected to the third node, a gate connected to the fifth node, and a second end of the current path connected to the fourth node; and a fourth capacitive element having a first electrode connected to the fourth node, and a second electrode disposed to receive the fourth pulse signal, wherein the first, second, third and fourth pulse signals are different in phase from each other, and the first and third pulse signals are set at substantially the same level as the external power supply voltage, and the second and fourth pulse signals are set at substantially the same level as the boosted voltage outputted from the boosting circuit.

Claim 13

A semiconductor memory device comprising: a memory cell formed on a semiconductor substrate, the memory cell including a charge accumulated portion and a control gate provided above the charge accumulated portion, wherein data programming and erasing in the memory cell is performed by transferring electric charge in the charge accumulated portion; a boosting circuit for boosting an external power supply voltage; a pulse generating circuit for generating first and third pulse signals with a first amplitude and second and fourth pulse signals with a second amplitude, the second amplitude being greater than the first amplitude, the pulse generating circuit including a voltage converting circuit which is supplied with a boosted voltage outputted from the boosting circuit, the voltage converting circuit generating the second and fourth pulse signals; and a voltage generating circuit for generating a control voltage to be applied to the memory cell, wherein the voltage generating circuit comprises: a first MOS transistor having a first end of a current path connected to a first node, a gate connected to a second node, and a second end of the current path connected to a third node; a first capacitive element having a first electrode connected to the first node, and a second electrode disposed to receive the first pulse signal; a second MOS transistor having a first end of a current path connected to the first node, a gate connected to the third node, and a second end of the current path connected to the second node; a second capacitive element having a first electrode connected to the second node, and a second electrode disposed to receive the second pulse signal; a third MOS transistor having a first end of a current path connected to the third node, a gate connected to a fourth node, and a second end of the current path connected to a fifth node; a third capacitive element having a first electrode connected to the third node, and a second electrode disposed to receive the third pulse signal; a fourth MOS transistor having a first end of a current path connected to the third node, a gate connected to the fifth node, and a second end of the current path connected to the fourth node; and a fourth capacitive element having a first electrode connected to the fourth node, and a second electrode disposed to receive the fourth pulse signal, wherein the first, second, third and fourth pulse signals are different in phase from each other, and the first and third pulse signals are set at substantially the same level as the external power supply voltage, and the second and fourth pulse signals are set at substantially the same level as the boosted voltage outputted from the boosting circuit.

Claim 14

The semiconductor memory device according to claim 8, wherein the first, second, third and fourth pulse signals have timings where their edges occur in the order of the first, third, second, second, third, first, first, third, fourth, fourth, third, first pulse signals in one cycle.