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US6044031A Expired / Lapsed US ⏱️ 0.0 years remaining

Programmable bit line drive modes for memory arrays

Assignee: Marvell International Ltd
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Filing: 1998-11-12
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Granted: 2000-03-28
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Expires: 2018-11-12
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Abstract

Abstract A field programmable memory array having a plurality of sub-arrays is provided. Programmable address decoders, programmable hierarchical bit line arrangements, programmable I/O arrangements, among other features, are provided to enable programming of portions of the array into selected modes. The modes may include wide memory, deep memory, FIFO, LIFO, among others. An embodiment of the invention is disclosed wherein the field programmable memory array is integrated with the programmable resources of a field programmable gate array.

Inventors

  • 👤 Joseph Andrew Iadanza
  • 👤 Frank Ray Keyser, III

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 23:29
CPC Classifications
G; G06; G06F; G06F7/00; G06F7/76; G06F7/78; G06F7/785; G06F5/00; G06F5/06; G06F5/10; G11; G11C; G11C7/00; G11C7/10; G11C7/1006; G11C7/1015; G11C7/1045; G11C7/1051; G11C7/1078; G11C7/12; G11C8/00; H; H03; H03K; H03K19/00; H03K19/02; H03K19/173; H03K19/177; H03K19/17704; H03K19/17748; H03K19/1776

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 108 words
A programmable memory array, comprising: at least one sub-array having a plurality of memory cells; a line for propagating memory cell data away from the cells of the at least one sub-array; a precharge device programmably connectable to the line; and a drive device connected to the line and programmably operable via configuration data independent of data in said memory cells and memory cell access signals, the drive device programmably operable in a first mode wherein discharge of the said line in accordance with the memory cell data is effected, and a second mode wherein drive of said line in accordance with the memory cell data is effected.
Claim 2
Dependent Claim 108 words
A programmable memory array, comprising: at least one sub-array having a plurality of memory cells; a line for propagating memory cell data away from the cells of the at least one sub-array; a precharge device programmably connectable to the line; and a drive device connected to the line and programmably operable via configuration data independent of data in said memory cells and memory cell access signals, the drive device programmably operable in a first mode wherein discharge of the said line in accordance with the memory cell data is effected, and a second mode wherein drive of said line in accordance with the memory cell data is effected.
Claim 3
Dependent Claim 29 words
The programmable memory array of claim 1, wherein the precharge device is connected to the line in the first mode and disconnected from the line in the second mode.
Claim 4
Dependent Claim 23 words
The programmable memory array of claim 2, wherein the first mode comprises synchronous sub-array operation and the second mode compromises asynchronous sub-array operation.
Claim 5
Dependent Claim 27 words
The programmable memory array of claim 1, wherein the drive device is programmably operable in a third mode wherein a high impedance is provided to the line.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-03-28 2003-09-27 2004-03-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-03-28 2007-09-27 2008-03-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-03-28 2011-09-27 2012-03-28 $7700.00 Window Closed / Lapsed

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