NAND-type EEPROM having bit lines and source lines commonly coupled through enhancement and depletion transistors

Claim 2

A nonvolatile semiconductor memory device comprising: a plurality of NAND memory cells each having first and second terminals and constituted by connecting a plurality of memory cells each having a control gate in series with each other, said NAND memory cells including adjacent first and second NAND memory cells; bit lines commonly used for NAND memory sets each constituted by at least said first and second NAND memory cells of said NAND memory cells, said bit lines being coupled to the first terminals of said NAND memory cells; source lines commonly used for the NAND memory sets each constituted by at least said first and second NAND memory cells of said NAND memory cells, said source lines being coupled to the second terminals of said NAND memory cells; first selection transistors arranged between the first terminal of the first NAND memory cell and said bit line; second selection transistors arranged between the first terminal of said second NAND memory cell and said bit line; third selection transistors arranged between the second terminal of the first NAND memory cell and said source line; fourth selection transistors arranged between the second terminal of said second NAND memory cell and said source line; a first control gate line coupled to at least control gates of said first selection transistors; a second control gate line coupled to at least control gates of said second selection transistors; a third control gate line coupled to at least control gates of said third selection transistors; a fourth control gate line coupled to at least control gates of said fourth selection transistors.

Claim 3

A device according to claim 1, wherein each of said first and second selection transistors includes first and second drain layers arranged parallel to each other and which further comprising a bit line contact formed across said first and second drain layers and coupled to said first and second drain layers.

Claim 4

A device according to claim 1, further comprising: potential applying means including control gate potential applying means for setting a potential of the gate of said memory cell in which data is to be written to be a first potential, bit line potential applying means for setting a potential of said bit line to be any one of a second potential lower than the first potential or a third potential lower than the second potential in accordance with the data to be written, and source line potential applying means for setting potentials of said source lines to be said second potential between the first potential and the third potential, when data is to be written in a memory cell; and means for, when data is to be written in a memory cell included in said first NAND memory cell, turning on said first and fourth selection transistors and turning off said second and third selection transistors, and for, when data is to be written in a memory cell included in said second NAND memory cell, turning on said second and third selection transistors and turning off said first and fourth selection transistors.

Claim 5

A device according to claim 1, further comprising: potential applying means including control gate potential applying means for setting a potential of the gate of said memory cell in which data is to be written to be a first potential, bit line potential applying means for setting a potential of said bit line to be any one of a second potential lower than the first potential or a third potential lower than the second potential in accordance with the data to be written, and source line potential applying means for setting potentials of said source lines to be said second potential between the first potential and the third potential, when data is to be written in a memory cell; and means for, when data is to be written in a memory cell included in said first NAND memory cell, turning off said first and fourth selection transistors and turning on said second and third selection transistors, and for, when data is to be written in a memory cell included in said second NAND memory cell, turning off said second and third selection transistors and turning on said first and fourth selection transistors.

Claim 6

A device according to claim 3, wherein said first and second selection transistors include first and second drain layers, respectively, said first and second drain layers being arranged parallel to each other and which further comprising a bit line contact formed across said first and second drain layers and coupled to said first and second drain layers.

Claim 7

A device according to claim 1, wherein one of said first and second selection transistors is an enhancement transistor and one of said third and fourth selection transistors is an enhancement transistor.

Claim 8

A device according to claim 6, further comprising: potential applying means including control gate potential applying means for setting a potential of the gate of said memory cell in which data is to be written to be a first potential, bit line potential applying means for setting a potential of said bit line to be any one of a second potential lower than the first potential or a third potential lower than the second potential in accordance with the data to be written, and source line potential applying means for setting potentials of said source lines to be said second potential between the first potential and the third potential, when data is to be written in a memory cell; and means for, when data is to be written in a memory cell included in said first NAND memory cell, turning on said first and fourth selection transistors and turning off said second and third selection transistors, and for, when data is to be written in a memory cell included in said second NAND memory cell, turning on said second and third selection transistors and turning off said first and fourth selection transistors.

Claim 9

A device according to claim 6, further comprising: potential applying means including control gate potential applying means for setting a potential of the gate of said memory cell in which data is to be written to be a first potential, bit line potential applying means for setting a potential of said bit line to be any one of a second potential lower than the first potential or a third potential lower than the second potential in accordance with the data to be written, and source line potential applying means for setting potentials of said source lines to be said second potential between the first potential and the third potential, when data is to be written in a memory cell; and means for, when data is to be written in a memory cell included in said first NAND memory cell, turning off said first and fourth selection transistors and turning on said second and third selection transistors, and for, when data is to be written in a memory cell included in said second NAND memory cell, turning off said second and third selection transistors and turning on said first and fourth selection transistors.

Claim 10

A device according to claim 7, wherein said first and second selection transistors include first and second drain layers, respectively, said first and second drain layers being arranged parallel to each other and which further comprising a bit line contact formed across said first and second drain layers and coupled to said first and second drain layers.

Claim 11

A device according to claim 1, wherein each of said first to fourth selection transistors includes an enhancement transistor and a depletion transistor which are coupled in series with each other; said first control gate line is coupled to a control gate of said enhancement transistor of said first selection transistors and a control gate of said depletion transistor of said second selection transistors; said second control gate line is coupled to a control gate of said enhancement transistor of said second selection transistors and a control gate of said depletion transistor of said first selection transistors; said third control gate line is coupled to a control gate of said enhancement transistor of said third selection transistors and a control gate of said depletion transistor of said fourth selection transistors; and said fourth control gate line is coupled to a control gate of said enhancement transistor of said fourth selection transistors and a control gate of said depletion transistor of said third selection transistors.

Claim 12

A device according to claim 10, wherein said first and second selection transistors include first and second drain layers, respectively, said first and second drain layers being arranged parallel to each other and which further comprising a bit line contact formed across said first and second drain layers and coupled to said first and second drain layers.

Claim 13

A device according to claim 10, further comprising: potential applying means including control gate potential applying means for setting a potential of the gate of said memory cell in which data is to be written to be a first potential, bit line potential applying means for setting a potential of said bit line to be any one of a second potential lower than the first potential or a third potential lower than the second potential in accordance with the data to be written, and source line potential applying means for setting potentials of said source lines to be said second potential between the first potential and the third potential, when data is to be written in a memory cell; and means for, when data is to be written in a memory cell included in said first NAND memory cell, turning on said first and fourth selection transistors and turning off said second and third selection transistors, and for, when data is to be written in a memory cell included in said second NAND memory cell, turning on said second and third selection transistors and turning off said first and fourth selection transistors.

Claim 14

A device according to claim 12, wherein said first and second selection transistors include first and second drain layers, respectively, said first and second drain layers being arranged parallel to each other and which further comprising a bit line contact formed across said first and second drain layers and coupled to said first and second drain layers.

Claim 15

A nonvolatile semiconductor memory device comprising: a plurality of NAND memory cells each having first and second terminals and constituted by connecting a plurality of memory cells each having a control gate in series with each other, said NAND memory cells including adjacent first and second NAND memory cells; bit lines commonly used for NAND memory sets each constituted by at least said first and second NAND memory cells of said NAND memory cells, said bit lines being coupled to the first terminals of said NAND memory cells connected in series; source lines commonly used for the NAND memory sets each constituted by at least said first and second NAND memory cells of said NAND memory cells, said source lines being coupled to the second terminals of said NAND memory cells connected in series; first selecting means arranged between the first terminals of said first and second NAND memory cells and said bit line; and second selecting means arranged between the second terminals of said first and second NAND memory cells and said source line; wherein said first selecting means include enhancement transistors and depletion transistors which are coupled in series with each other, and an order of connection of said enhancement transistors and said depletion transistors to the first terminals of said first and second NAND memory cells are reversed to each other, and said second selecting means include enhancement transistors and depletion transistors which are coupled in series with each other, and an order of connection of said enhancement transistors and said depletion transistors to the second terminals of said first and second NAND memory cells are reversed to each other.

Claim 16

A nonvolatile semiconductor memory device comprising: a plurality of NAND memory cells each having first and second terminals and constituted by connecting a plurality of memory cells each having a control gate in series with each other, said NAND memory cells including adjacent first and second NAND memory cells; bit lines commonly used for NAND memory sets each constituted by at least said first and second NAND memory cells of said NAND memory cells, said bit lines being coupled to the first terminals of said NAND memory cells connected in series; source lines commonly used for the NAND memory sets each constituted by at least said first and second NAND memory cells of said NAND memory cells, said source lines being coupled to the second terminals of said NAND memory cells connected in series; first selecting means arranged between the first terminals of said first and second NAND memory cells and said bit line; and second selecting means arranged between the second terminals of said first and second NAND memory cells and said source line; wherein said first selecting means include enhancement transistors and depletion transistors which are coupled in series with each other, and an order of connection of said enhancement transistors and said depletion transistors to the first terminals of said first and second NAND memory cells are reversed to each other, and said second selecting means include enhancement transistors and depletion transistors which are coupled in series with each other, and an order of connection of said enhancement transistors and said depletion transistors to the second terminals of said first and second NAND memory cells are reversed to each other.

Claim 17

A device according to claim 14, further comprising: means for, when data is to be written in a memory cell, setting a potential of the gate of said memory cell in which data is to be written to be a first potential, setting a potential of said bit line to be any one of a second potential lower than the first potential or a third potential lower than the second potential in accordance with the data to be written, and setting potentials of said source lines to be said second potential between the first potential and the third potential; and means for, when data is to be written in a memory cell included in said first NAND memory cells, turning on said first selecting means coupled to said first NAND memory cell and said second selecting means coupled to said second NAND memory cell and turning off said first selecting means coupled to said second NAND memory cell and said second selecting means coupled to said first NAND memory cell, and for, when data is to be written in a memory cell included in said second NAND memory cells, turning off said first selecting means coupled to said first NAND memory cell and said second selecting means coupled to said second NAND memory cell and turning on said first selecting means coupled to said second NAND memory cell and said second selecting means coupled to said first NAND memory cell.

Claim 18

A device according to claim 15, wherein said first and second selecting means include first and second drain layers, respectively, said first and second drain layers being arranged parallel to each other and which further comprising a bit line contact formed across said first and second drain layers and coupled to said first and second drain layers.