Patent US6159862A successfully refreshed from Google Patents.
US6159862A
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Semiconductor processing method and system using C5 F8
Assignee: Tokyo Electron Ltd
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Filing: 1998-06-01
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Granted: 2000-12-12
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Expires: 2018-06-01
Abstract
Abstract A method and system for processing a substrate in the presence of high purity C 5 F 8 . When processing oxides and dielectrics in a gas plasma processing system, C 5 F 8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O 2 . When using a silicon nitride (Si x N y ) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.
Inventors
- 👤 Masahiro Yamada
- 👤 Youbun Ito
- 👤 Kouichiro Inazawa
- 👤 Abron Toure
- 👤 Kunihiko Hinata
- 👤 Hiromi Sakima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W20/031; H10W20/069; H10W20/082; H10W20/084; H10W20/086; Y; Y02; Y02C; Y02C20/00; Y02C20/30; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
89 words
An etching method comprising the steps of: etching an SiO 2 layer of a treatment object, including the SiO 2 layer above an SiN x layer, in a hermetic treatment chamber using a gas which includes at least C 4 F 8 and CO until said SiN x layer is exposed; and etching said SiO 2 layer, after said SiN x layer has been exposed, using one of (1) C 5 F 8 and (2) C 5 F 8 and at least one of CO and O 2 .
Claim 2
Dependent Claim
89 words
An etching method comprising the steps of: etching an SiO 2 layer of a treatment object, including the SiO 2 layer above an SiN x layer, in a hermetic treatment chamber using a gas which includes at least C 4 F 8 and CO until said SiN x layer is exposed; and etching said SiO 2 layer, after said SiN x layer has been exposed, using one of (1) C 5 F 8 and (2) C 5 F 8 and at least one of CO and O 2 .
Claim 3
Dependent Claim
21 words
The etching method as claimed in claim 1, further comprising the step of adding a carrier gas to said treatment gas.
Claim 4
Independent Claim
55 words
A method for etching a semiconductor substrate, comprising the steps of: etching a semiconductor substrate in a mixture of C 5 F 8 , a carrier gas, O 2 and CO in quantities in a range, given in standard cubic centimeters per minute (sccm), of: 5-15 sccm, 500 sccm, 0-100 sccm, and 0-6 sccm, respectively.
Claim 5
Independent Claim
55 words
A method for etching a semiconductor substrate, comprising the steps of: etching a semiconductor substrate in a mixture of C 5 F 8 , a carrier gas, O 2 and CO in quantities in a range, given in standard cubic centimeters per minute (sccm), of: 5-15 sccm, 500 sccm, 0-100 sccm, and 0-6 sccm, respectively.
Claim 6
Dependent Claim
27 words
The method as claimed in claim 3, wherein the step of etching comprises applying the gas mixture to etch the semiconductor substrate in a plasma processing system.
Claim 7
Dependent Claim
13 words
The method as claimed in claim 3, wherein the carrier gas is Ar.
Claim 8
Dependent Claim
42 words
The method as claimed in claim 3, wherein the step of etching comprises mixing C 5 F 8 , a carrier gas, O 2 and CO in quantities in a range of: 9-11 sccm, 500 sccm, 50-100 sccm, and 3-6 sccm, respectively.
Claim 9
Dependent Claim
13 words
The method as claimed in claim 6, wherein the carrier gas is Ar.
Claim 10
Dependent Claim
38 words
The method as claimed in claim 3, wherein the step of etching comprises mixing C 5 F 8 , Ar, O 2 and CO in quantities substantially of: 9 sccm, 500 sccm, 50 sccm, and 3 sccm, respectively.
Claim 11
Dependent Claim
13 words
The method as claimed in claim 8, wherein the carrier gas is Ar.
Claim 12
Independent Claim
40 words
A method for etching a semiconductor substrate, comprising the steps of: mixing C 5 F 8 , Ar, O 2 and CO; and etching an oxide layer and a silicon nitride layer at a selectivity ratio of at least 3:1.
Claim 13
Independent Claim
40 words
A method for etching a semiconductor substrate, comprising the steps of: mixing C 5 F 8 , Ar, O 2 and CO; and etching an oxide layer and a silicon nitride layer at a selectivity ratio of at least 3:1.
Claim 14
Dependent Claim
30 words
The method as claimed in claim 10, wherein the step of etching comprises etching an oxide layer and a silicon nitride layer at a selectivity ratio of at least 10:1.
Claim 15
Dependent Claim
30 words
The method as claimed in claim 10, wherein the step of etching comprises etching an oxide layer and a silicon nitride layer at a selectivity ratio of at least 20:1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-12 | 2004-06-12 | 2004-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-12 | 2008-06-12 | 2008-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-12 | 2012-06-12 | 2012-12-12 | $7700.00 | Window Closed / Lapsed |