US6320784B1
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Memory cell and method for programming thereof
Assignee: NXP USA Inc
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Filing: 2000-03-14
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Granted: 2001-11-20
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Expires: 2020-03-14
Abstract
Abstract A memory cell ( 101 ), its method of formation, and operation are disclosed. In accordance with one embodiment, the memory cell ( 101 ) comprises a first and second current carrying electrode ( 12 ) a control electrode ( 19 ), and doped discontinuous storage elements ( 17 ). In accordance with an alternative embodiment, memory cell programming is accomplished by removing or adding an average of approximately at least a first charge ( 30, 62, 64 ), which can be electron(s) or hole(s) from each of the doped discontinuous storage elements ( 17 ).
Inventors
- 👤 Ramachandran Muralidhar
- 👤 Sucharita Madhukar
- 👤 Bo Jiang
- 👤 Bruce E. White
- 👤 Srikanth B. Samavedam
- 👤 David L. O'Meara
- 👤 Michael Alan Sadd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/687; B; B82; B82Y; B82Y10/00; G; G11; G11C; G11C11/00; G11C11/56; G11C11/5671; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0416; H10D30/01; H10D30/021; H10D30/0411; H10D30/688; G11C2216/00; G11C2216/02; G11C2216/08
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
32 words
A memory cell comprising: a first current carrying electrode, a second current carrying electrode, a control electrode, and discontinuous storage elements, wherein the discontinuous storage elements comprise nanocrystals doped with dopant atoms.
Claim 2
Dependent Claim
32 words
A memory cell comprising: a first current carrying electrode, a second current carrying electrode, a control electrode, and discontinuous storage elements, wherein the discontinuous storage elements comprise nanocrystals doped with dopant atoms.
Claim 3
Dependent Claim
33 words
The memory cell of claim 1 , wherein the discontinuous storage elements include a material selected from a group consisting of silicon, germanium, gallium arsenide, aluminum gallium arsenide, silicon carbide, and silicon nitride.
Claim 4
Dependent Claim
23 words
The memory cell of claim 1 , wherein the dopant atoms are selected from a group consisting of phosphorus, boron, indium, and arsenic.
Claim 5
Independent Claim
67 words
A method for programming a memory cell comprising: providing a memory cell that includes: a first current carrying electrode; a second current carrying electrode; a control electrode; a plurality of discontinuous storage elements, wherein the discontinuous storage elements comprise nanocrystals doped with dopant atoms; and removing at least a first charge from the discontinuous storage elements wherein the at least the first charge contains a first polarity.
Claim 6
Independent Claim
67 words
A method for programming a memory cell comprising: providing a memory cell that includes: a first current carrying electrode; a second current carrying electrode; a control electrode; a plurality of discontinuous storage elements, wherein the discontinuous storage elements comprise nanocrystals doped with dopant atoms; and removing at least a first charge from the discontinuous storage elements wherein the at least the first charge contains a first polarity.
Claim 7
Dependent Claim
25 words
The method of claim 4 , wherein removing at least the first charge is further characterized as an erase operation for a non-volatile memory cell.
Claim 8
Dependent Claim
23 words
The method of claim 4 , further comprising injecting at least a second charge with the first polarity into the discontinuous storage elements.
Claim 9
Dependent Claim
25 words
The method of claim 6 , wherein the injecting at least a second charge is further characterized as a write operation for a non-volatile memory.
Claim 10
Dependent Claim
25 words
The method of claim 6 , wherein the injecting at least a second charge is further characterized as an erase operation for a non-volatile memory.
Claim 11
Independent Claim
66 words
A method for programing a memory cell comprising: providing a memory cell that includes: a first current carrying electrode; a second current carrying electrode; a control electrode; a plurality of discontinuous storage elements, wherein each of the discontinuous storage elements comprise a nanocrystal doped with at least one dopant atom; and adding at least a first charge to each of the plurality of discontinuous storage elements.
Claim 12
Independent Claim
66 words
A method for programing a memory cell comprising: providing a memory cell that includes: a first current carrying electrode; a second current carrying electrode; a control electrode; a plurality of discontinuous storage elements, wherein each of the discontinuous storage elements comprise a nanocrystal doped with at least one dopant atom; and adding at least a first charge to each of the plurality of discontinuous storage elements.
Claim 13
Dependent Claim
15 words
The method of claim 9 wherein the first charge is further characterized as an electron.
Claim 14
Dependent Claim
15 words
The method of claim 9 wherein the first charge is further characterized as a hole.
Claim 15
Dependent Claim
26 words
The method of claim 9 , wherein adding the at least the first charge is further characterized as a write operation for a non-volatile memory cell.
Claim 16
Dependent Claim
24 words
The method of claim 9 , further comprising removing at least one of the at least the first charge from the discontinuous storage elements.
Claim 17
Dependent Claim
34 words
The method of claim 13 , wherein removing at least one of the at least the first charge from the discontinuous storage elements is further characterized as an erase operation for a non-volatile memory.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-19 | 2005-05-21 | 2005-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-19 | 2009-05-21 | 2009-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-19 | 2013-05-21 | 2013-11-20 | $7700.00 | Window Closed / Lapsed |