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US6501172B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Power module

Assignee: Mitsubishi Electric Corp
•
Filing: 2000-09-28
•
Granted: 2002-12-31
•
Expires: 2020-09-28
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Abstract

Abstract In a powder module ( 111 ), a free-wheeling diode ( 1 A), an IGBH ( 1 B), and a capacitor ( 20 ) for smoothing direct current are disposed directly on a surface ( 2 BS) of a conductive heat sink ( 2 B) with through holes ( 2 BH). The rear electrodes of the free-wheeling diode ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are bonded to the heat sink ( 2 B) for example with solder, whereby the diode ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are electrically connected with the heat sink ( 2 B). The front electrodes of the diodes ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are connected with each other for example by wires ( 7 ). In the heat sink ( 2 B), a cooling medium flows through the through holes ( 2 BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

Inventors

  • 👤 Masakazu Fukada
  • 👤 Dai Nakajima
  • 👤 Ken Takanashi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 16:37
CPC Classifications
H; H05; H05K; H05K7/00; H05K7/14; H05K7/1422; H05K7/1427; H05K7/1432; H05K7/14329; H10; H10W; H10W40/00; H10W40/40; H10W40/47; H10W90/00; H10W44/00; H10W44/20; H10W44/203; H10W44/209; H10W44/212; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/541; H10W72/5445; H10W72/547; H10W72/5475; H10W74/00; H10W90/701; H10W90/751; H10W90/753; H10W90/754

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 77 words
A power module comprising: a heat sink; a first power semiconductor device disposed directly on said heat sink; a capacitor disposed directly on said heat sink; an insulating substrate disposed on said heat sink; and a second power semiconductor device disposed through said insulating substrate over said heat sink, wherein said heat sink has conductivity and an electrode of said first power semiconductor device and an electrode of said capacitor are directly bonded to said heat sink.
Claim 2
Dependent Claim 77 words
A power module comprising: a heat sink; a first power semiconductor device disposed directly on said heat sink; a capacitor disposed directly on said heat sink; an insulating substrate disposed on said heat sink; and a second power semiconductor device disposed through said insulating substrate over said heat sink, wherein said heat sink has conductivity and an electrode of said first power semiconductor device and an electrode of said capacitor are directly bonded to said heat sink.
Claim 3
Dependent Claim 38 words
The power module according to claim 1 , wherein said heat sink has a plurality of surfaces; and said first power semiconductor device and said capacitor are disposed on different ones of said surfaces of said heat sink.
Claim 4
Dependent Claim 19 words
The power module according to claim 1 , wherein said heat sink has a passage of a cooling medium.
Claim 5
Dependent Claim 26 words
The power module according to claim 1 , further comprising: another heat sink; and a second power semiconductor device disposed directly on said another heat sink.
Claim 6
Dependent Claim 56 words
The power module according to claim 4 , wherein said another heat sink has conductivity; and an electrode of said second power semiconductor device is directly bonded to said another heat sink, said power module further comprising: an insulating member for insulating said another heat sink from said heat sink and said electrode of said capacitor.
Claim 7
Dependent Claim 44 words
The power module according to claim 5 , further comprising: a conductive member disposed on said insulating member; and a flexible wire connected to said conductive member for providing an electrical connection between said first power semiconductor device and said second power semiconductor device.
Claim 8
Dependent Claim 53 words
The power module according to claim 1 , wherein said first power semiconductor device and said second power semiconductor device are electrically connected with each other; said first power semiconductor device forms a lower arm of a power transducer; and said second power semiconductor device forms an upper arm of said power transducer.
Claim 9
Dependent Claim 105 words
The power module according to claim 7 , further comprising: a plurality of arms of said power transducer, including said upper arm and said lower arm; and a coaxial line protruding through a surface on which said first or second power semiconductor device is disposed, said coaxial line including a first electrode for supplying a first voltage to said first power semiconductor device of each of said lower arms and a second electrode for supplying a second voltage to said second power semiconductor device of each of said upper arms, wherein said plurality of arms are angularly spaced at regular intervals about said coaxial line.
Claim 10
Dependent Claim 53 words
The power module according to claim 4 , wherein said first power semiconductor device and said second power semiconductor device are electrically connected with each other; said first power semiconductor device forms a lower arm of a power transducer; and said second power semiconductor device forms an upper arm of said power transducer.
Claim 11
Dependent Claim 89 words
The power module comprising: a plurality of heat sinks each having a passage of cooling medium; a plurality of power semiconductor devices disposed on said heat sinks; a capacitor disposed directly on each of said plurality of heat sinks; and a casing having space and being capable of housing said plurality of heat sinks; wherein said plurality of heat sinks are arranged within said space of said casing, leaving a clearance therebetween, whereby continuous space including said clearance and said passages is formed within said space of said casing.
Claim 12
Dependent Claim 89 words
The power module comprising: a plurality of heat sinks each having a passage of cooling medium; a plurality of power semiconductor devices disposed on said heat sinks; a capacitor disposed directly on each of said plurality of heat sinks; and a casing having space and being capable of housing said plurality of heat sinks; wherein said plurality of heat sinks are arranged within said space of said casing, leaving a clearance therebetween, whereby continuous space including said clearance and said passages is formed within said space of said casing.
Claim 13
Dependent Claim 20 words
The power module according to claim 10 , wherein said passages of said heat sinks pass an insulative cooling medium.

References Cited (Backward Citations)

US4376287A Cited
US4527185A Cited
US4858073A Cited
US5313361A Cited
US5504378A Cited
US6018192A Cited
US6181008B1 Cited
US6075712A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2005-12-30 2006-07-01 2006-12-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2009-12-30 2010-07-01 2010-12-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2013-12-30 2014-07-01 2014-12-31 $7700.00 Window Closed / Lapsed

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