US6512703B2
Expired / Lapsed
US
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Nonvolatile semiconductor memory
Assignee: Toshiba Corp
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Filing: 2001-08-06
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Granted: 2003-01-28
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Expires: 2021-08-06
Abstract
Abstract A memory cell array has a unit formed from one memory cell and two select transistors sandwiching the memory cell. One block has one control gate line. Memory cells connected to one control gate line form one page. A sense amplifier having a latch function is connected to a bit line. In a data change operation, data of memory cells of one page are read to the sense amplifiers. After data are superscribed on data in the sense amplifiers, and a page erase is performed, data in the sense amplifiers are programmed in the memory cells of one page. Superscription of data in the sense amplifiers allows a data change operation for byte data or page data.
Inventors
- 👤 Koji Sakui
- 👤 Junichi Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:20
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/04; G11C16/0408; G11C16/0433
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
162 words
A nonvolatile semiconductor memory comprising: a memory cell array having a memory cell for programming data using an F-N tunneling current; a bit line connected to the memory cell; a sense amplifier connected to said bit line and having a latch function; and means for, when data are to be simultaneously programmed in memory cells corresponding to one page, which are connected to a selected control gate line, applying a first potential to wells in which the memory cells of one page are formed, a second potential to a control gate of each of the memory cells of one page, the first potential to a bit line connected to a selected memory cell of the memory cells of one page, for which programming is to be executed, and an intermediate potential between the first and second potentials to a bit line connected to an unselected memory cell of the memory cells of one page, for which programming is not to be executed.
Claim 2
Dependent Claim
162 words
A nonvolatile semiconductor memory comprising: a memory cell array having a memory cell for programming data using an F-N tunneling current; a bit line connected to the memory cell; a sense amplifier connected to said bit line and having a latch function; and means for, when data are to be simultaneously programmed in memory cells corresponding to one page, which are connected to a selected control gate line, applying a first potential to wells in which the memory cells of one page are formed, a second potential to a control gate of each of the memory cells of one page, the first potential to a bit line connected to a selected memory cell of the memory cells of one page, for which programming is to be executed, and an intermediate potential between the first and second potentials to a bit line connected to an unselected memory cell of the memory cells of one page, for which programming is not to be executed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-01-27 | 2006-07-29 | 2007-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-01-27 | 2010-07-29 | 2011-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-01-27 | 2014-07-29 | 2015-01-28 | $7700.00 | Window Closed / Lapsed |