Patent US6576511B2 successfully refreshed from Google Patents.
US6576511B2
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Method for forming nitride read only memory
Assignee: Macronix International Co Ltd
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Filing: 2001-05-02
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Granted: 2003-06-10
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Expires: 2021-05-02
Abstract
Abstract A semiconductor substrate having a source/drain region is initially provided, wherein a channel is formed in the space between the source/drain region within the semiconductor substrate. Then the oxide-nitride-oxide layers are formed on the semiconductor substrate, wherein the nitride layer is a charge trapping layer. Afterward, an electrically conductive material layer such as a gate is formed on and overlays the oxide-nitride-oxide layers. Subsequently, the memory cell is programmed by ultraviolet light irradiation to increase the threshold voltage of the memory cell.
Inventors
- 👤 Samuel Pan
- 👤 Chia-Hsing Chen
- 👤 Chun-Jung Lin
- 👤 Minnie Hsiung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 02:31
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0413
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
118 words
A method for programming a memory, the method comprising: providing a semiconductor substrate having a source/drain region therein, wherein said source/drain region is separated at a predetermined region for programming from each other; forming a dielectric layer on said semiconductor substrate; forming a conductive layer on said dielectric layer; forming and defining a photoresist layer on said conductive layer that is located on source/drain region to expose a partial surface of said conductive layer that is located on said predetermined region for programming; irradiating said predetermined region for programming with a light having an energy for activating electrons by said photoresist layer as a mask to program said memory; and removing said photoresist layer on said conductive layer.
Claim 2
Independent Claim
118 words
A method for programming a memory, the method comprising: providing a semiconductor substrate having a source/drain region therein, wherein said source/drain region is separated at a predetermined region for programming from each other; forming a dielectric layer on said semiconductor substrate; forming a conductive layer on said dielectric layer; forming and defining a photoresist layer on said conductive layer that is located on source/drain region to expose a partial surface of said conductive layer that is located on said predetermined region for programming; irradiating said predetermined region for programming with a light having an energy for activating electrons by said photoresist layer as a mask to program said memory; and removing said photoresist layer on said conductive layer.
Claim 3
Dependent Claim
16 words
The method according to claim 1 , wherein said predetermined region for programming comprises a channel.
Claim 4
Dependent Claim
16 words
The method according to claim 1 , wherein said dielectric layer comprises a charge trapping layer.
Claim 5
Dependent Claim
19 words
The method according to claim 3 , wherein the material of said charge trapping layer comprises a silicon nitride.
Claim 6
Dependent Claim
14 words
The method according to claim 1 , wherein said light comprises a ultraviolet light.
Claim 7
Dependent Claim
20 words
The method according, to claim 1 , wherein said energy for activating electrons is about 3 eV to 9 eV.
Claim 8
Independent Claim
141 words
A method for programming a read only memory, the method comprising: providing a semiconductor substrate having a source/drain region therein, wherein said source/drain region is separated at a channel from each other; forming a first isolated layer on said semiconductor substrate; forming a charge trapping layer on said first isolated layer; forming a second isolated layer on said charge trapping layer; forming a conductive layer on said second isolated layer; forming and defining a photoresist layer on said conductive layer that is located on source/drain region to expose a partial surface of said conductive layer that is located on said channel; irradiating said channel with a light having an energy about 3 eV to 9 eV for activating electrons by said photoresist layer as a mask to program said read only memory; and removing said photoresist layer on said conductive layer.
Claim 9
Independent Claim
141 words
A method for programming a read only memory, the method comprising: providing a semiconductor substrate having a source/drain region therein, wherein said source/drain region is separated at a channel from each other; forming a first isolated layer on said semiconductor substrate; forming a charge trapping layer on said first isolated layer; forming a second isolated layer on said charge trapping layer; forming a conductive layer on said second isolated layer; forming and defining a photoresist layer on said conductive layer that is located on source/drain region to expose a partial surface of said conductive layer that is located on said channel; irradiating said channel with a light having an energy about 3 eV to 9 eV for activating electrons by said photoresist layer as a mask to program said read only memory; and removing said photoresist layer on said conductive layer.
Claim 10
Dependent Claim
16 words
The method according to claim 7 , wherein said channel comprises a predetermined region for programming.
Claim 11
Dependent Claim
15 words
The method according to claim 7 , wherein said semiconductor substrate comprises a first conductivity.
Claim 12
Dependent Claim
15 words
The method according to claim 7 , wherein said source/drain region comprises a second conductivity.
Claim 13
Dependent Claim
20 words
The method according to claim 7 , wherein the method for forming said first isolated layer comprises a deposition process.
Claim 14
Dependent Claim
19 words
The method according to claim 7 , wherein the material of said first isolated layer comprises a silicon oxide.
Claim 15
Dependent Claim
20 words
The method according to claim 7 , wherein the method for forming said charge trapping layer comprises a deposition process.
Claim 16
Dependent Claim
19 words
The method according to claim 7 , wherein the material of said charge trapping layer comprises a silicon nitride.
Claim 17
Dependent Claim
20 words
The method according to claim 7 , wherein the method for forming said second isolated layer comprises a deposition process.
Claim 18
Dependent Claim
19 words
The method according to claim 7 , wherein the material of said second isolated layer comprises a silicon oxide.
Claim 19
Dependent Claim
19 words
The method according to claim 7 , wherein the method for forming said conductive layer comprises a deposition process.
Claim 20
Dependent Claim
17 words
The method according to claim 7 , wherein the material of said conductive layer comprises a polysilicon.
Claim 21
Dependent Claim
14 words
The method according to claim 7 , wherein said light comprises a ultraviolet light.
Claim 22
Dependent Claim
27 words
The method according to claim 7 , wherein said read only memory is programmed by way of the irradiating said predetermined region for programming with said light.
Claim 23
Independent Claim
199 words
A method for programming a nitride read only memory, the method comprising: providing a semiconductor substrate having a first conductivity; forming a plurality of source/drain regions having a second conductivity in said semiconductor substrate, wherein said plurality of source/drain regions are separated at a plurality of channels from each other; depositing a first oxide layer on said semiconductor substrate to form a first isolated layer; depositing a nitride layer on said first oxide layer to form a charge trapping layer; depositing a second oxide layer on said nitride layer to form a second isolated layer; depositing a polysilicon layer on said second oxide layer to form a conductive layer; defining a plurality of photoresist layers on said polysilicon layer that are located on said plurality of source/drain regions and exposing a portion surface of said polysilicon layer that are located on said plurality of channels to form a plurality of predetermined regions for programming; irradiating said plurality of predetermined regions for programming with an ultraviolet light by said plurality of photoresist layers as masks to program said nitride read only memory; and removing said plurality of photoresist layers on said polysilicon layer to form said nitride read only memory.
Claim 24
Independent Claim
199 words
A method for programming a nitride read only memory, the method comprising: providing a semiconductor substrate having a first conductivity; forming a plurality of source/drain regions having a second conductivity in said semiconductor substrate, wherein said plurality of source/drain regions are separated at a plurality of channels from each other; depositing a first oxide layer on said semiconductor substrate to form a first isolated layer; depositing a nitride layer on said first oxide layer to form a charge trapping layer; depositing a second oxide layer on said nitride layer to form a second isolated layer; depositing a polysilicon layer on said second oxide layer to form a conductive layer; defining a plurality of photoresist layers on said polysilicon layer that are located on said plurality of source/drain regions and exposing a portion surface of said polysilicon layer that are located on said plurality of channels to form a plurality of predetermined regions for programming; irradiating said plurality of predetermined regions for programming with an ultraviolet light by said plurality of photoresist layers as masks to program said nitride read only memory; and removing said plurality of photoresist layers on said polysilicon layer to form said nitride read only memory.
Claim 25
Dependent Claim
20 words
The method according to claim 21 , wherein said ultraviolet light comprises a energy about 3 eV to 9 eV.
References Cited (Backward Citations)
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