Patent US6630410B2 successfully refreshed from Google Patents.
US6630410B2
Expired / Lapsed
US
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Self-aligned PECVD etch mask
Assignee: Micron Technology Inc
•
Filing: 2002-08-13
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Granted: 2003-10-07
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Expires: 2022-08-13
Abstract
Abstract A method for forming an etched feature in a substrate such as an insulator layer of a semiconductor wafer is provided. In one embodiment, the method includes initially etching a substrate layer using a photoresist or other masking layer to form the etched feature (e.g., opening) to a selected depth, and depositing a self-aligning mask layer for a continued etch of the formed feature. In another embodiment of the method, the self-aligned mask is deposited onto a substrate having an etched opening or other feature, to protect the upper surface and corners of the substrate and sidewalls of the feature while the bottom portion of the opening is cleaned or material at the bottom portion of the opening is removed. The present methods utilize the height difference between the bottom portion of the feature and the surface of the substrate to selectively deposit a self-aligning mask layer relative to a pre-formed opening or other feature, for example, to extend an opening to a depth that an original photomask thickness cannot support.
Inventors
- 👤 Shane J. Trapp
- 👤 Kevin G. Donohoe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:25
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695; H10P76/00; H10P76/20; H10W10/10; H10W10/17; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24479; Y10T428/24521; Y10T428/24537
Claims Analysis
Total Claims: 81
Claim 1
Independent Claim
61 words
A semiconductor substrate, comprising: a surface having an etched feature formed therein; the etched feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed over a surface of the substrate.
Claim 2
Dependent Claim
61 words
A semiconductor substrate, comprising: a surface having an etched feature formed therein; the etched feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed over a surface of the substrate.
Claim 3
Dependent Claim
19 words
The substrate of claim 1 , wherein the etched feature has an aspect ratio of at least about 0.5.
Claim 4
Dependent Claim
17 words
The substrate of claim 1 , wherein the self-aligned mask layer comprises an etch resistant polymer material.
Claim 5
Dependent Claim
18 words
The substrate of claim 1 , wherein the self-aligned mask layer comprises a fluorocarbon, hydrofluorocarbon, or mixtures thereof.
Claim 6
Dependent Claim
14 words
The substrate of claim 1 , wherein the self-aligned mask layer comprises a halocarbon.
Claim 7
Dependent Claim
14 words
The substrate of claim 1 , wherein the self-aligned mask layer comprises a hydrocarbon.
Claim 8
Dependent Claim
37 words
The substrate of claim 1 , wherein the self-aligned mask layer is disposed over the surface of the substrate and within the etched feature over a portion of the sidewalls contiguous with the surface of the substrate.
Claim 9
Dependent Claim
39 words
The substrate of claim 1 , wherein the self-aligned mask layer is disposed over a masking layer disposed over the surface of the substrate; the masking layer having an opening disposed therethrough to the etched feature in the substrate.
Claim 10
Dependent Claim
14 words
The substrate of claim 1 , wherein the etched feature comprises a contact opening.
Claim 11
Dependent Claim
79 words
A semiconductor substrate, comprising: a surface having an etched feature formed therein; the etched feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed over a surface of the substrate and within the etched feature over a portion of the sidewalls contiguous with the surface of the substrate.
Claim 12
Dependent Claim
79 words
A semiconductor substrate, comprising: a surface having an etched feature formed therein; the etched feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed over a surface of the substrate and within the etched feature over a portion of the sidewalls contiguous with the surface of the substrate.
Claim 13
Dependent Claim
19 words
The substrate of claim 10 , wherein the self-aligned mask layer comprises a halocarbon, hydrofluorocarbon, hydrocarbon, or mixture thereof.
Claim 14
Dependent Claim
115 words
A semiconductor substrate, comprising: a surface having a masking layer disposed thereon, the masking layer having at least one opening to expose an etched feature disposed in the substrate; the etched feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer comprising an etch resistant polymer material disposed on the masking layer and a portion of the sidewalls of the etched feature contiguous with the substrate surface, and substantially no polymer material is disposed on the substrate at the bottom portion of the etched feature.
Claim 15
Dependent Claim
115 words
A semiconductor substrate, comprising: a surface having a masking layer disposed thereon, the masking layer having at least one opening to expose an etched feature disposed in the substrate; the etched feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer comprising an etch resistant polymer material disposed on the masking layer and a portion of the sidewalls of the etched feature contiguous with the substrate surface, and substantially no polymer material is disposed on the substrate at the bottom portion of the etched feature.
Claim 16
Dependent Claim
75 words
A semiconductor substrate, comprising: an insulative layer having a surface, an etched feature formed in the insulative layer, and a masking layer overlying the surface of the insulative layer; the feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed on the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer.
Claim 17
Dependent Claim
75 words
A semiconductor substrate, comprising: an insulative layer having a surface, an etched feature formed in the insulative layer, and a masking layer overlying the surface of the insulative layer; the feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed on the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer.
Claim 18
Dependent Claim
18 words
The substrate of claim 13 , wherein the insulative layer comprises silicon dioxide, phosphosilicate glass, or borophosphosilicate glass.
Claim 19
Dependent Claim
17 words
The substrate of claim 13 , wherein the self-aligned mask layer comprises an etch resistant polymer material.
Claim 20
Dependent Claim
14 words
The substrate of claim 13 , wherein the self-aligned mask layer comprises a halocarbon.
Claim 21
Dependent Claim
18 words
The substrate of claim 13 , wherein the self-aligned mask layer comprises fluorocarbon, hydrofluorocarbon, or a mixture thereof.
Claim 22
Dependent Claim
14 words
The substrate of claim 13 , wherein the self-aligned mask layer comprises a hydrocarbon.
Claim 23
Dependent Claim
14 words
The substrate of claim 13 , wherein the etched feature is a contact opening.
Claim 24
Dependent Claim
91 words
A semiconductor substrate, comprising: an insulative layer having a surface, an etched feature formed in the insulative layer, and a masking layer overlying the surface of the insulative layer; the feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed on the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer; the self-aligned mask layer comprising a polymer material having an etch resistance relative to the substrate.
Claim 25
Dependent Claim
91 words
A semiconductor substrate, comprising: an insulative layer having a surface, an etched feature formed in the insulative layer, and a masking layer overlying the surface of the insulative layer; the feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed on the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer; the self-aligned mask layer comprising a polymer material having an etch resistance relative to the substrate.
Claim 26
Dependent Claim
14 words
The substrate of claim 20 , wherein the masking layer comprises a photoresist material.
Claim 27
Dependent Claim
83 words
A semiconductor substrate, comprising: an insulative layer having a surface and an etched feature formed in the insulative layer; the feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed on the surface of the insulative layer and over a portion of the sidewalls contiguous with the surface of the insulative layer.
Claim 28
Dependent Claim
83 words
A semiconductor substrate, comprising: an insulative layer having a surface and an etched feature formed in the insulative layer; the feature defined by sidewalls, a bottom portion, and a depth such that substantially no polymer material is deposited onto the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed on the surface of the insulative layer and over a portion of the sidewalls contiguous with the surface of the insulative layer.
Claim 29
Dependent Claim
23 words
The substrate of claim 22 , wherein the self-aligned mask layer comprises a polymer material having an etch resistance relative to the substrate.
Claim 30
Dependent Claim
19 words
The substrate of claim 22 , wherein the etched feature has an aspect ratio of at least about 0.5.
Claim 31
Dependent Claim
119 words
A semiconductor substrate, comprising: a surface and at least one etched feature defined by sidewalls and a bottom portion, and a layer of an etchable material overlying the surface of the substrate including the sidewalls and the bottom portion of the etched feature, the layer of the etchable material having a surface; the etched feature having a depth such that substantially no polymer material is deposited onto the etchable layer overlying the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed on the surface of the etchable layer and a portion of the etchable layer overlying the sidewalls and contiguous with the surface of the etchable layer.
Claim 32
Dependent Claim
119 words
A semiconductor substrate, comprising: a surface and at least one etched feature defined by sidewalls and a bottom portion, and a layer of an etchable material overlying the surface of the substrate including the sidewalls and the bottom portion of the etched feature, the layer of the etchable material having a surface; the etched feature having a depth such that substantially no polymer material is deposited onto the etchable layer overlying the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed on the surface of the etchable layer and a portion of the etchable layer overlying the sidewalls and contiguous with the surface of the etchable layer.
Claim 33
Dependent Claim
13 words
The substrate of claim 25 , wherein the etchable layer comprises silicon nitride.
Claim 34
Dependent Claim
19 words
The substrate of claim 25 , wherein the etchable material comprises a silicon oxide or a doped silicon oxide.
Claim 35
Dependent Claim
31 words
The substrate of claim 25 , wherein the etchable material comprises an oxide selected from the group consisting of silicon dioxide, silicon dioxide deposited from tetraethylorthosilicate, phosphosilicate glass, and borophosphosilicate glass.
Claim 36
Dependent Claim
24 words
The substrate of claim 25 , wherein the etchable material comprises a conducting material selected from the group consisting of polysilicon and a metal.
Claim 37
Dependent Claim
19 words
The substrate of claim 25 , wherein the etched feature has an aspect ratio of at least about 0.5.
Claim 38
Dependent Claim
14 words
The substrate of claim 25 , wherein the etched feature comprises a contact opening.
Claim 39
Dependent Claim
115 words
A semiconductor substrate, comprising: a surface and at least one etched feature defined by sidewalls and a bottom portion, and a layer of an etchable material overlying the surface of the substrate including the sidewalls of the etched feature, the layer of the etchable material having a surface; the etched feature having a depth such that substantially no polymer material is deposited onto the etchable layer overlying the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed on the surface of the etchable layer and a portion of the etchable layer overlying the sidewalls and contiguous with the surface of the etchable layer.
Claim 40
Dependent Claim
115 words
A semiconductor substrate, comprising: a surface and at least one etched feature defined by sidewalls and a bottom portion, and a layer of an etchable material overlying the surface of the substrate including the sidewalls of the etched feature, the layer of the etchable material having a surface; the etched feature having a depth such that substantially no polymer material is deposited onto the etchable layer overlying the substrate at the bottom portion of the etched feature in a subsequent polymer deposition step; and a self-aligned mask layer disposed on the surface of the etchable layer and a portion of the etchable layer overlying the sidewalls and contiguous with the surface of the etchable layer.
Claim 41
Dependent Claim
29 words
The substrate of claim 32 , wherein the substrate comprises a material selected from the group consisting of monocrystalline silicon, epitaxial silicon, polysilicon, doped silicon, doped polysilicon, and silicides.
Claim 42
Dependent Claim
13 words
The substrate of claim 32 , wherein the etchable layer comprises silicon nitride.
Claim 43
Dependent Claim
19 words
The substrate of claim 32 , wherein the etchable material comprises a silicon oxide or a doped silicon oxide.
Claim 44
Dependent Claim
22 words
The substrate of claim 32 , wherein the self-aligned mask layer comprises a polymer material derived from plasma enhanced chemical vapor deposition.
Claim 45
Dependent Claim
18 words
The substrate of claim 32 , wherein the self-aligned mask layer comprises a fluorocarbon, hydrofluorocarbon, or mixture thereof.
Claim 46
Dependent Claim
14 words
The substrate of claim 32 , wherein the self-aligned mask layer comprises a halocarbon.
Claim 47
Dependent Claim
14 words
The substrate of claim 32 , wherein the self-aligned mask layer comprises a hydrocarbon.
Claim 48
Dependent Claim
19 words
The substrate of claim 32 , wherein the self-aligned mask layer has an etch resistance relative to the substrate.
Claim 49
Dependent Claim
17 words
The substrate of claim 32 , wherein the self-aligned mask layer comprises an etch resistance polymer material.
Claim 50
Dependent Claim
45 words
A semiconductor devices, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over the surface of the substrate.
Claim 51
Dependent Claim
45 words
A semiconductor devices, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over the surface of the substrate.
Claim 52
Dependent Claim
17 words
The device of claim 42 , wherein the self-aligned mask layer comprises an etch resistant polymer material.
Claim 53
Dependent Claim
18 words
The device of claim 42 , wherein the self-aligned mask layer comprises a fluorocarbon, hydrofluorocarbon, or mixtures thereof.
Claim 54
Dependent Claim
14 words
The device of claim 42 , wherein the self-aligned mask layer comprises a halocarbon.
Claim 55
Dependent Claim
14 words
The device of claim 42 , wherein the self-aligned mask layer comprises a hydrocarbon.
Claim 56
Dependent Claim
14 words
The device of claim 42 , wherein the etched feature comprises a contact opening.
Claim 57
Dependent Claim
63 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over a surface of the substrate and over a portion of the sidewalls of the etched feature contiguous with the surface of the substrate.
Claim 58
Dependent Claim
63 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over a surface of the substrate and over a portion of the sidewalls of the etched feature contiguous with the surface of the substrate.
Claim 59
Dependent Claim
67 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer disposed over the surface of the substrate and having an opening disposed therethrough to expose the etched feature in the substrate; and a self-aligned mask layer disposed over the masking layer.
Claim 60
Dependent Claim
67 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer disposed over the surface of the substrate and having an opening disposed therethrough to expose the etched feature in the substrate; and a self-aligned mask layer disposed over the masking layer.
Claim 61
Dependent Claim
14 words
The device of claim 49 , wherein the masking layer comprises a photoresist material.
Claim 62
Dependent Claim
85 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer disposed over the surface of the substrate and having an opening disposed therethrough to expose the etched feature in the substrate; and a self-aligned mask layer disposed over the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the substrate.
Claim 63
Dependent Claim
85 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer disposed over the surface of the substrate and having an opening disposed therethrough to expose the etched feature in the substrate; and a self-aligned mask layer disposed over the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the substrate.
Claim 64
Dependent Claim
47 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over the surface of the insulative layer.
Claim 65
Dependent Claim
47 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over the surface of the insulative layer.
Claim 66
Dependent Claim
18 words
The device of claim 52 , wherein the insulative layer comprises silicon dioxide, phosphosilicate glass, or borophosphosilicate glass.
Claim 67
Dependent Claim
23 words
The device of claim 52 , wherein the self-aligned mask layer comprises a polymer material having an etch resistance relative to the substrate.
Claim 68
Dependent Claim
66 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over the surface of the insulative layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer.
Claim 69
Dependent Claim
66 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; and a self-aligned mask layer disposed over the surface of the insulative layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer.
Claim 70
Dependent Claim
54 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer overlying the surface of the insulative layer; and a self-aligned mask layer disposed over the masking layer.
Claim 71
Dependent Claim
54 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer overlying the surface of the insulative layer; and a self-aligned mask layer disposed over the masking layer.
Claim 72
Dependent Claim
73 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer overlying the surface of the insulative layer; and a self-aligned mask layer disposed over the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer.
Claim 73
Dependent Claim
73 words
A semiconductor device, comprising: an insulative layer having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a masking layer overlying the surface of the insulative layer; and a self-aligned mask layer disposed over the masking layer and over a portion of the sidewalls of the etched feature contiguous with the surface of the insulative layer.
Claim 74
Dependent Claim
57 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a layer of an etchable material over the surface of the substrate; and a self-aligned mask layer disposed over the layer of etchable material.
Claim 75
Dependent Claim
57 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a layer of an etchable material over the surface of the substrate; and a self-aligned mask layer disposed over the layer of etchable material.
Claim 76
Dependent Claim
15 words
The device of claim 58 , wherein the layer of etchable material comprises silicon nitride.
Claim 77
Dependent Claim
21 words
The device of claim 58 , wherein the layer of etchable material comprises a silicon oxide or a doped silicon oxide.
Claim 78
Dependent Claim
33 words
The device of claim 58 , wherein the layer of etchable material comprises an oxide selected from the group consisting of silicon dioxide, silicon dioxide deposited from tetraethylorthosilicate, phosphosilicate glass, and borophosphosilicate glass.
Claim 79
Dependent Claim
26 words
The device of claim 58 , wherein the layer of etchable material comprises a conducting material selected from the group consisting of polysilicon and a metal.
Claim 80
Dependent Claim
88 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a layer of an etchable material disposed over the surface of the substrate and on the sidewalls of the etched feature; and a self-aligned mask layer disposed over the etchable material layer on the surface of the substrate and at least a portion of the etchable material layer on the sidewalls of the etched feature.
Claim 81
Dependent Claim
88 words
A semiconductor device, comprising: a substrate having a surface and an etched feature formed therein, the etched feature defined by sidewalls, a bottom portion, and an aspect ratio of at least about 0.5; a layer of an etchable material disposed over the surface of the substrate and on the sidewalls of the etched feature; and a self-aligned mask layer disposed over the etchable material layer on the surface of the substrate and at least a portion of the etchable material layer on the sidewalls of the etched feature.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-10-06 | 2007-04-07 | 2007-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-10-06 | 2011-04-07 | 2011-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-10-06 | 2015-04-07 | 2015-10-07 | $7700.00 | Window Closed / Lapsed |