Patent US6743713B2 successfully refreshed from Google Patents.
US6743713B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC)
Assignee: Institute of Microelectronics
•
Filing: 2002-05-15
•
Granted: 2004-06-01
•
Expires: 2022-05-15
Abstract
Abstract A method of forming a via-first type dual damascene structure in the absence of an etch stop layer and without via-edge erosion or via-bottom punch-through is described. The invention uses two organic films deposited within via hole prior to trench etching. A via hole over a lower level metal line is first etched in the dielectric film. Two, preferably organic, bottom anti-reflective coating (BARC) films, first one being the conformal type to coat the surfaces and the walls of the via and the second one being the planarizing type to at least partially fill the via, are then deposited. Using a mask aligned to via hole, a wiring trench of desired depth is etched in the top portion of the dielectric film. During trench etching, the conformal BARC-1 film protects the via-edges from eroding and the planarizing BARC-2 film prevents punch-through of the via-bottom. Desired metal such as aluminum or copper are deposited within said dual damascene pattern.
Inventors
- 👤 Moitreyee Mukherjee-Roy
- 👤 Vladimir N. Bliznetsov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/085
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
161 words
A method of forming a dual damascene pattern, the method comprising: providing a substrate having a metal line and a barrier film on top of said metal line; depositing an inter-level dielectric film on said barrier film; forming a via hole through said inter-level dielectric film to said metal line; depositing a BARC-1 layer to coat the surfaces of said via hole, said BARC-1 layer being formed of an organic conformal bottom anti-reflective coating material to protect edges of said via hole; depositing a planarizing BARC-2 layer on said BARC-1 layer to fill said via hole, said planarizing BARC-2 layer being formed of an organic planarizing bottom anti-reflective coating material to protect the barrier film from punch through, said organic planarizing bottom anti-reflective coating material being different from said conformal bottom anti-reflective coating material; forming a wiring trench pattern in the upper part of said inter-level dielectric film; and forming dual damascene pattern after stripping and cleaning said two BARC films.
Claim 2
Independent Claim
161 words
A method of forming a dual damascene pattern, the method comprising: providing a substrate having a metal line and a barrier film on top of said metal line; depositing an inter-level dielectric film on said barrier film; forming a via hole through said inter-level dielectric film to said metal line; depositing a BARC-1 layer to coat the surfaces of said via hole, said BARC-1 layer being formed of an organic conformal bottom anti-reflective coating material to protect edges of said via hole; depositing a planarizing BARC-2 layer on said BARC-1 layer to fill said via hole, said planarizing BARC-2 layer being formed of an organic planarizing bottom anti-reflective coating material to protect the barrier film from punch through, said organic planarizing bottom anti-reflective coating material being different from said conformal bottom anti-reflective coating material; forming a wiring trench pattern in the upper part of said inter-level dielectric film; and forming dual damascene pattern after stripping and cleaning said two BARC films.
Claim 3
Dependent Claim
29 words
The method of forming a dual damascene pattern according to claim 1 , wherein said inter-level dielectric film is composed of one or more layers of an organic material.
Claim 4
Dependent Claim
39 words
The method of forming a dual damascene pattern according to claim 2 , wherein said inter-level organic dielectric film comprises one or more of the following: poly-tetrafluoroethylene (PTFE), polyimide, polyimide hybrids, poly arylene and cyclotenes, teflons, and polyimide nanofoams.
Claim 5
Dependent Claim
30 words
The method of forming a dual damascene pattern according to claim 1 , wherein said inter-level dielectric film is composed of one or more layers of inorganic and hybrid materials.
Claim 6
Dependent Claim
47 words
The method of forming a dual damascene pattern according to claim 4 , wherein said inter-level inorganic and said hybrid materials comprise silicon dioxide, silicon oxy-fluoride (SiOF or FSG), spin-on glass (SOG), nanoporous silica, organo silicate glass (OSG), silica aerogels, methyl silsesquioxane (MSQ), and hydrogen silsesquioxane (HSQ).
Claim 7
Dependent Claim
27 words
The method of forming a dual damascene pattern according to claim 1 , wherein said BARC-1 film has a thickness of between about 600 and 700° A.
Claim 8
Dependent Claim
28 words
The method of forming a dual damascene pattern according to claim 1 , wherein said BARC-1 material has a viscosity of approximately between about 9 and 20 centipoises.
Claim 9
Dependent Claim
33 words
The method of forming a dual damascene pattern according to claim 1 , wherein said BARC-1 material is deposited in said via-hole in a partially conformal manner or in a fully conformal manner.
Claim 10
Dependent Claim
21 words
The method of farming a dual damascene pattern according to claim 1 , wherein said BARC-2 film fills said via-hole completely.
Claim 11
Dependent Claim
21 words
The method of forming a dual damascene pattern according to claim 1 , wherein said BARC-2 film fills via-hole only partially.
Claim 12
Independent Claim
183 words
A method of forming a via-first dual damascene pattern with the use of two bottom anti-reflective coating (BARC) films; the method comprising: providing a substrate having a metal line and a barrier film on top of said metal line; forming an inter-level dielectric film on said barrier film, forming a via hole through said inter-level dielectric film to said metal line, forming a BARC-1 layer to coat the surfaces of said via hole, said BARC-1 layer being formed of an organic conformal bottom anti-reflective coating material to protect edges of said via hole; forming a planarizing BARC-2 layer on said BARC-1 layer to fill said via hole, said planarizing BARC-2 layer being formed of an organic planarizing bottom anti-reflective coating material to protect the barrier film from punch through, said organic planarizing bottom anti-reflective coating material being different from said conformal bottom anti-reflective coating material; forming a metal wiring trench pattern in the upper part of the said inter-level dielectric film, forming said dual damascene pattern after stripping and cleaning the said two BARC films; and filling said dual damascene pattern with metal.
Claim 13
Independent Claim
183 words
A method of forming a via-first dual damascene pattern with the use of two bottom anti-reflective coating (BARC) films; the method comprising: providing a substrate having a metal line and a barrier film on top of said metal line; forming an inter-level dielectric film on said barrier film, forming a via hole through said inter-level dielectric film to said metal line, forming a BARC-1 layer to coat the surfaces of said via hole, said BARC-1 layer being formed of an organic conformal bottom anti-reflective coating material to protect edges of said via hole; forming a planarizing BARC-2 layer on said BARC-1 layer to fill said via hole, said planarizing BARC-2 layer being formed of an organic planarizing bottom anti-reflective coating material to protect the barrier film from punch through, said organic planarizing bottom anti-reflective coating material being different from said conformal bottom anti-reflective coating material; forming a metal wiring trench pattern in the upper part of the said inter-level dielectric film, forming said dual damascene pattern after stripping and cleaning the said two BARC films; and filling said dual damascene pattern with metal.
Claim 14
Dependent Claim
32 words
The method of forming a via-first dual damascene pattern according to claim 11 , wherein said inter-level dielectric film is composed of one or more organic, or inorganic, or hybrid materials layers.
Claim 15
Dependent Claim
33 words
The method of forming a via-first dual damascene pattern according to claim 12 , wherein said inter-level organic material comprises poly-tetrafluoroethylene (PTFE), polyimide, polyimide hybrids, poly arylene and cyclotenes, teflons, and polyimide nanofoams.
Claim 16
Dependent Claim
47 words
The method of forming a via-first dual damascene pattern according to claim 12 , wherein said inter-level inorganic and hybrid materials comprise silicon dioxide, silicon oxy-fluoride (SiOF or FSG), spin-on glass (SOG), nanoporous silica, organo silicate glass (OSG), silica aerogels, methyl silsesquioxane (MSQ), and hydrogen silsesquioxane (HSQ).
Claim 17
Independent Claim
29 words
The method of forming a via-first dual damascene pattern according to claims 11 , wherein said BARC-1 material has a film thickness of between about 600 and 700° A.
Claim 18
Dependent Claim
34 words
The method of forming a via-first dual damascene pattern according to claim 11 , wherein said BARC-1 material is deposited in said via-hole in a partially conformal manner or in a fully conformal manner.
Claim 19
Dependent Claim
24 words
The method of forming a via-first dual damascene pattern according to claim 11 , wherein said BARC-2 film fills said via-hole completely or partially.
Claim 20
Dependent Claim
21 words
The method of forming a via-first dual damascene pattern according to claim 11 , wherein said metal is aluminum or copper.
Claim 21
Independent Claim
179 words
A method of forming a via-first dual damascene pattern without using an etch stop layer; the method comprising: providing a substrate having a metal line and a barrier film on top of said metal line; forming an inter-level organic, inorganic or hybrid dielectric film on said barrier film without providing an etch stop layer; forming a via hole through said inter-level dielectric film to said metal line; forming a BARC-1 layer to coat the surfaces of said via hole, said BARC-1 layer being formed of an organic conformal bottom anti-reflective coating material to protect edges of said via hole; farming a planarizing BARC-2 layer on said BARC-1 layer to fill said via hole, said planarizing BARC-2 layer being formed of an organic planarizing bottom anti-reflective coating material to protect the barrier film from punch through said organic planarizing bottom anti-reflective coating material being different from said conformal bottom anti-reflective coating material; forming a wiring trench pattern in the upper part of said inter-level dielectric film; and forming the dual damascene pattern after stripping and cleaning said two BARC films.
Claim 22
Independent Claim
179 words
A method of forming a via-first dual damascene pattern without using an etch stop layer; the method comprising: providing a substrate having a metal line and a barrier film on top of said metal line; forming an inter-level organic, inorganic or hybrid dielectric film on said barrier film without providing an etch stop layer; forming a via hole through said inter-level dielectric film to said metal line; forming a BARC-1 layer to coat the surfaces of said via hole, said BARC-1 layer being formed of an organic conformal bottom anti-reflective coating material to protect edges of said via hole; farming a planarizing BARC-2 layer on said BARC-1 layer to fill said via hole, said planarizing BARC-2 layer being formed of an organic planarizing bottom anti-reflective coating material to protect the barrier film from punch through said organic planarizing bottom anti-reflective coating material being different from said conformal bottom anti-reflective coating material; forming a wiring trench pattern in the upper part of said inter-level dielectric film; and forming the dual damascene pattern after stripping and cleaning said two BARC films.
Claim 23
Dependent Claim
34 words
The method of forming a via-first dual damascene pattern according to claim 19 , wherein said inter-level organic dielectric film comprises poly-tetrafluoroethylene (PTFE), polyimide, polyimide hybrids, poly arylene and cyclotenes, teflons, and polyimide nanofoams.
Claim 24
Dependent Claim
49 words
The method of forming a via-first dual damascene pattern according to claim 19 , wherein the said inter-level inorganic and hybrid dielectric films comprise silicon dioxide, silicon oxy-fluoride (SiOF or FSG), spin-on glass (SOG), nanoporous silica, organo silicate glass (OSG), silica aerogels, methyl silsesquioxane (MSQ), and hydrogen silsesquioxane (HSQ).
Claim 25
Dependent Claim
29 words
The method of forming a via-first dual damascene pattern according to claim 19 , wherein said BARC-1 material has a film thickness of between about 600 and 700° A.
Claim 26
Dependent Claim
32 words
The method of forming a via-first dual damascene pattern according to claim 19 , wherein said BARC-1 material is deposited in a partially conformal manner or preferably in a fully conformal manner.
Claim 27
Dependent Claim
24 words
The method of forming a via-first dual damascene pattern according to claim 19 , wherein said BARC-2 film fills said via-hole completely or partially.
References Cited (Backward Citations)
US6380096B2
Cited
US6306732B1
Cited
US6251774B1
Cited
US6228760B1
Cited
US6265294B1
Cited
US6391761B1
Cited
US6309955B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-06-01 | 2007-12-01 | 2008-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-06-01 | 2011-12-01 | 2012-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-06-01 | 2015-12-01 | 2016-06-01 | $7700.00 | Window Closed / Lapsed |