Patent US4396702A successfully refreshed from Google Patents.
US4396702A
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Method of forming pattern in positive resist media
Assignee: Intersil Corp
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Filing: 1981-11-10
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Granted: 1983-08-02
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Expires: 2001-11-10
Abstract
Abstract This invention relates to novel poly(silane sulfone) copolymers having repeating units represented by the formula ##STR1## wherein R is alkyl and n is an integer. Positive resist recording media prepared from the subject copolymers demonstrate excellent sensitivity and resolution and are resistant to oxygen plasma etching.
Inventors
- 👤 Nitin V. Desai
- 👤 Eugene S. Poliniak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:27
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758; C; C08; C08G; C08G75/00; C08G75/20; C08G75/205; C08G75/22
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
92 words
In a method of forming a positive patterned layer on a substrate comprising: (a) coating said substrate with a composition comprising a positive acting polymeric resist material and a suitable solvent therefor; (b) drying said coating to form a positive recording medium; (c) irradiating selected portions of said medium with radiation; and (d) developing the irradiated portions of said medium with a suitable developer, the improvement comprising utilizing as the resist material a copolymer having repeating units represented by the formula ##STR3## wherein R is lower alkyl and n is an integer.
Claim 2
Dependent Claim
92 words
In a method of forming a positive patterned layer on a substrate comprising: (a) coating said substrate with a composition comprising a positive acting polymeric resist material and a suitable solvent therefor; (b) drying said coating to form a positive recording medium; (c) irradiating selected portions of said medium with radiation; and (d) developing the irradiated portions of said medium with a suitable developer, the improvement comprising utilizing as the resist material a copolymer having repeating units represented by the formula ##STR3## wherein R is lower alkyl and n is an integer.
Claim 3
Dependent Claim
23 words
A method in accordance with claim 1, wherein said composition contains from about 6 to about 20 percent by weight of said copolymer.
Claim 4
Dependent Claim
12 words
A method in accordance with claim 1, wherein said solvent is cyclopentanone.
Claim 5
Dependent Claim
16 words
A method in accordance with claim 1 wherein said medium is irradiated with an electron beam.
Claim 6
Dependent Claim
17 words
A method in accordance with claim 1, wherein said medium is irradiated with a modulated electron beam.
Claim 7
Dependent Claim
15 words
A method in accordance with claim 1, wherein said medium is baked prior to irradiation.
Claim 8
Dependent Claim
16 words
A method in accordance with claim 1, wherein said development exposes corresponding portions of the substrate.
Claim 9
Dependent Claim
17 words
A method in accordance with claim 7, additionally including etching the exposed substrate with a suitable etchant.
Claim 10
Dependent Claim
12 words
A method in accordance with claim 1, wherein said developer is 2-methoxyethanol.
References Cited (Backward Citations)
US4041190A
Cited
US4158617A
Cited
US4126712A
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US4289845A
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US4237208A
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US4262083A
Cited
US4301231A
Cited
US4357369A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-01 | 1987-01-31 | 1987-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-01 | 1991-01-31 | 1991-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-01 | 1995-01-31 | 1995-08-02 | $7700.00 | Window Closed / Lapsed |